Sanken Electric Co TM541S-L, TM561S-L Datasheet
TO-220F 5A Triac
TM541S-L, TM561S-L
■Features
●Repetitive peak off-state voltage: V
●RMS on-state current: I
●Gate trigger current: I
●Isolation voltage: V
GT
ISO
=1500V(50Hz Sine wave, RMS )
=5A
T(RMS)
=20mA max (MODE , , )
●UL approved type available
=400, 600V
DRM
■Absolute Maximum Ratings
Parameter Symbol
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
TM541S-L
400
Ratings
–40 to
–40 to
1500
5.0
50
10
2
5
0.5
+
+
TM561S-L
600
125
125
External Dimensions
(Unit: mm)
±0.3
16.9
13.0min
φ
3.3
0.2
±
8.4
±0.2
±0.2
±0.2
±0.2
4.0
0.8
3.9
2.54
10.0
a
b
2.2
(1) (2) (3)
±0.2
1.35
1.35
0.85
2.54
0.2
±
±0.15
±0.15
+0.2
–0.1
0.45
(1). Terminal 1 (T1)
(2). Terminal 2 (T
(3). Gate (G)
Unit Conditions
V
A
A
Conduction angle 360°, Tc=104°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
V
A
W
W
°C
°C
Vrms
50Hz Sine wave, RMS, Terminal to Case, 1 min.
±0.2
4.2
C 0.5
2.8
+0.2
–0.1
±0.2
2.4
a. Part Number
)
b. Lot Number
2
Weight: Approx. 2.1g
■Electrical Characteristics
Parameter Symbol
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
34
I
DRM
V
V
I
V
Rth
TM
GT
GT
GD
I
H
0.2
Ratings
typmin max
0.3
0.7
0.7
0.8
0.8
7
8
10
15
5
Unit Conditions
2.0 V
0.1
1.6
mA
V
2.0
2.0
2.0
V
20
20
20
mA
V
mA
4.0
°C/W
(
Tj=25°C, unless otherwise specified)
, RGK=
D=VDRM
V
Pulse test, I
V
V
V
V
D=VDRM
=6V, R
D
=6V, R
D
=1/2×V
D
=6V
D
, RGK=
TM
=10Ω, TC=25°C
L
=10Ω, TC=25°C
L
DRM
Junction to case
, Tj=125°C
∞
, Tj=25°C
∞
=7A
, Tj=125°C
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
TM541S-L, TM561S-L
v
– iT Characteristics (max)
T
100
50
(A)
T
10
Tj=125°C
5
1
On-state current i
0.5
0.1
I
T(RMS)
140
120
(°C)
100
a
80
60
40
Ambient temperature T
20
0
Transient thermal resistance
Characteristics
100
(°C/W)
th
10
1
Tj=25°C
0.5
1.0 1.5 2.0 2.5 3.0 3.5
On-state voltage vT (V)
– Ta Ratings
Full-cycle sinewave
Conduction angle: 360°
Self-supporting
Natural cooling
No wind
0
1.0 1.50.5 2.0 2.5 3.0
RMS on-state current I
Junction to
operating
environment
Junction to
case
T(RMS
I
T(RMS)–PT(AV )
7
Full-cycle sinewave
Conduction angle : 360°
6
(W)
)
AV
(
T
5
4
3
2
1
Average on-state power P
0
0
V
temperature characteristics
GT
(Typical)
1.2
1.0
(V)
GT
0.8
0.6
0.4
Gate trigger voltage V
0.2
0
(A)
)
–40 0 75 10025 50 125
Characteristics
123 456
RMS on-state current I
MODE
MODE
MODE
Junction temperature Tj (°C)
(A)
)
T(RMS
(VD=6V, RL=10Ω)
I
– Tc Ratings
T(RMS)
150
125
(°C)
C
100
75
50
Case temperature T
25
Full-cycle sinewave
Conduction angle : 360°
0
1234 65
0
RMS on-state current I
I
temperature characteristics
GT
(Typical)
100
50
(mA)
GT
10
5
Gate trigger current I
1
–40 0 75 10025 50 125
MODE
MODE
MODE
Junction temperature Tj (°C)
T(RMS
(VD=6V, RL=10Ω)
(A)
)
Transient thermal resistance r
0.1
0.1 1 10 10 10
t, Time (ms)
23104105
35
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