Sanken Electric Co TM361S-L, TM341S-L Datasheet
TO-220F 3A Triac
TM341S-L, TM361S-L
■Features
●Repetitive peak off-state voltage: V
●Rms on-state current: I
●Gate trigger current: I
●Isolation voltage: V
ISO
GT
=1500V(50Hz Sine wave, RMS )
=3A
T(RMS)
=20mA max (MODE , , )
●UL approved type available
=400, 600V
DRM
■Absolute Maximum Ratings
Parameter Symbol
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
TM341S-L
400
Ratings
–40 to
–40 to
1500
3.0
30
6
0.5
3
0.3
+
+
TM361S-L
600
125
125
External Dimensions
(Unit: mm)
φ
3.3
±0.2
8.4
±0.3
16.9
13.0min
±0.2
0.2
±
0.2
±
±0.2
4.0
0.8
3.9
2.54
10.0
a
b
2.2
(1) (2) (3)
±0.2
0.2
±
1.35
1.35
0.85
2.54
±0.15
0.15
±
+0.2
–0.1
0.45
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
Unit Conditions
V
A
A
Conduction angle 360°, Tc=109°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
V
A
W
W
°C
°C
Vrms
50Hz Sine wave, RMS, Terminal to Case, 1 min.
±0.2
4.2
C 0.5
2.8
+0.2
–0.1
±0.2
2.4
a. Part Number
b. Lot Number
Weight: Approx. 2.1g
■Electrical Characteristics
Parameter Symbol
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
30
I
DRM
V
V
I
V
Rth
TM
GT
GT
GD
I
H
0.2
Ratings
typmin max
0.3
0.7
0.7
0.8
0.8
8
10
12
15
10
Unit Conditions
2.0 V
0.1
1.6
mA
V
2.0
2.0
2.0
V
20
20
20
mA
V
mA
5.0
°C/W
(
Tj=25°C, unless otherwise specified)
, RGK=
D=VDRM
V
Pulse test, I
V
V
V
V
D=VDRM
=6V, R
D
=6V, R
D
=1/2×V
D
=6V
D
, RGK=
TM
=10Ω, TC=25°C
L
=10Ω, TC=25°C
L
DRM
Junction to case
, Tj=125°C
∞
, Tj=25°C
∞
=5A
, Tj=125°C
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
v
– iT Characteristics (max)
T
100
50
(A)
T
10
5
Tj=125°C
1
On-state current i
0.5
0.1
I
T(RMS)–PT(AV )
5
(W)
)
4
AV
(
T
3
2
1
Average on-state power P
0
Tj=25°C
0.5
1.0 1.5 2.0 2.5 3.0 3.5
On-state voltage vT (V)
Characteristics
Full-cycle sinewave
Conduction angle
=360°
θ=θ
1+θ2
θ
2
θ
1
0
12345
RMS on-state current I
T(RMS
TM341S-L, TM361S-L
I
Ratings
TSM
50
(A)
40
TSM
30
20
10
Surge on-state current I
0
1 5 10 50 100
I
– Tc Ratings
T(RMS)
150
125
(°C)
C
100
75
50
Case temperature T
25
0
0
12345
(A)
)
RMS on-state current I
Full-cycle sinewave
Conduction angle : 360°
(A)
)
T(RMS
Initial junction temperature
Tj=125°C
1cycle
50Hz
Number of cycle
I
T(RMS)
I
10 ms
TSM
– Ta Ratings
150
125
(°C)
a
100
75
50
Ambient temperature T
25
0
0
1.0 1.50.5 2.0 2.5 3.0
RMS on-state current I
Full-cycle sinewave
Conduction angle: 360°
Self-supporting
Natural cooling
No wind
(A)
)
T(RMS
Gate Characteristics
14
12
10
(V)
GF
8
6
4
Gate voltage v
See graph at the upper right
2
0
0 0.5 1.0 1.5
I
temperature Characteristics
H
(Typical)
10
(mA)
H
5
Holding current I
0
–40 0 50 75 10025 125
(V)
4
GT
2
Tj=25°C
0
0
20 40 60
Gate trigger voltage V
Gate trigger current
I
GT
Gate current i
–
(T
–T
2
(V
+
(T
–T
2
+
)
1
GF
=30V, IP=3.0A, RGK=
D
–
)
1
Junction temperature Tj (°C)
Tj= –40°C
Tj= –20°C
(mA)
(A)
)
∞
Pulse trigger temperature Characteristics vgt
(MODE –
30
10
DC gate trigger
voltage at 25°C
( )( )
GT
V
1
w
t
Gate trigger voltage
at Ta and
vgt
0.1
0.5 1 10 10210
Pulse width t
) (MODE –
vgt
50%
t
Tj= –40°C
–20°C
25°C
75°C
125°C
w
3
4
(µs)
w
10
Pulse trigger temperature Characteristics
(MODE –
30
10
DC gate trigger
current at 25°C
( )( )
GT
I
1
w
t
Gate trigger current
at Ta and
igt
0.1
0.5 1 10 10 10
Pulse width t
V
temperature characteristics
GT
(Typical)
1.2
1.0
(V)
GT
0.8
0.6
0.4
Gate trigger voltage V
0.2
0
MODE (T
MODE (T
MODE (T
–40 0 75 10025 50 125
Junction temperature Tj (°C)
) (MODE –
igt
50%
t
Tj= –40°C
–20°C
25°C
75°C
125°C
(VD=6V, RL=10Ω)
–,G–
)
2
+,G+
)
2
+,G–
)
2
w
23104
(µs)
w
gt
i
(Typical)
(Typical)
30
10
DC gate trigger
voltage at 25°C
( )( )
GT
V
1
w
t
Gate trigger voltage
at Ta and
vgt
0.1
0.5 1 10 10210
Pulse width t
30
10
DC gate trigger
current at 25°C
( )( )
GT
I
1
w
t
Gate trigger current
at Ta and
igt
0.1
0.5 1 10 10 10
Pulse width t
I
temperature characteristics
GT
(Typical)
24
20
(mA)
GT
10
) (MODE –
Tj= –40°C
–20°C
25°C
75°C
125°C
(µs)
w
) (MODE –
Tj= –40°C
–20°C
25°C
75°C
125°C
23104
(µs)
w
(VD=6V, RL=10Ω)
–,G–
MODE (T
2
+,G–
MODE (T
2
+,G+
MODE (T
2
Gate trigger current I
0
–40 0 75 10025 50 125
Junction temperature Tj (°C)
Tj= –40°C
–20°C
25°C
75°C
125°C
w
Tj= –40°C
–20°C
25°C
75°C
125°C
23104
w
Junction to
operating
environment
t, Time (ms)
)
vgt
50%
t
w
3
4
10
(µs)
)
igt
50%
t
w
(µs)
Junction to
case
23104105
vgt
50%
t
w
3
4
10
igt
50%
t
w
)
)
)
30
10
DC gate trigger
voltage at 25°C
( )( )
GT
V
1
w
t
Gate trigger voltage
at Ta and
vgt
0.1
0.5 1 10 10210
Pulse width t
30
10
DC gate trigger
current at 25°C
( )( )
GT
I
1
w
t
Gate trigger current
at Ta and
igt
0.1
0.5 1 10 10 10
Pulse width t
Transient thermal resistance
Characteristics
100
(°C/W)
th
10
1
Transient thermal resistance r
0.1
0.1 1 10 10 10
31
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