Sanken Electric Co TM361M-L, TM341M-L Datasheet
TO-220 3A Triac
TM341M-L, TM361M-L
■Features
●Repetitive peak off-state voltage: V
●RMS on-state current: I
●Gate trigger Current: I
GT
=3A
T(RMS)
=20mA max (MODE , , )
=400, 600V
DRM
■Absolute Maximum Ratings
Parameter Symbol
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
TM341M-L
400
Ratings
–40 to
–40 to
TM361M-L
3.0
30
6
0.5
3
0.3
+
125
+
125
600
External Dimensions
(Unit: mm)
0.2
±
3.0
0.2
16.7max
±
8.8
12.0 min
4.0 max
2.5
a
±
0.1
10.4max
b
(1) (2) (3)
φ
3.75
±
0.15
1.35
±
0.1
2.5
(1). Terminal 1 (T1)
(2). Terminal 2 (T
(3). Gate (G)
0.1
±
Unit Conditions
V
A
A
Conduction angle 360°, Tc=115°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
V
A
W
W
°C
°C
5.0max
2.1max
+0.2
–0.1
0.65
0.2
±
1.7
a. Part Number
)
b. Lot Number
2
Weight: Approx. 2.6g
■Electrical Characteristics
Parameter Symbol
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
28
I
DRM
V
V
I
V
Rth
TM
GT
GT
GD
I
H
0.2
Ratings
typmin max
0.3
0.7
0.7
0.8
0.8
8
10
12
15
10
Unit Conditions
2.0 V
0.1
1.6
mA
V
2.0
2.0
2.0
V
20
20
20
mA
V
mA
3.0
°C/W
(Tj=25°C, unless otherwise specified)
=
V
, R
D
DRM
GK
V
=
V
, R
D
DRM
GK
Pulse test, I
V
=
6V, R
D
V
=
6V, R
D
=
1/2×V
V
D
V
=
6V
D
L
L
=
=
DRM
TM
10Ω, T
10Ω, T
Junction to case
=
=
=
, Tj
5A
, Tj=125
∞
, Tj=25
∞
=
C
=
C
=
125°C
25
°C
25°C
°C
°C
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
v
– iT Characteristics (max)
T
100
50
(A)
T
10
5
Tj=25°C
On-state current i
1
0.5
1.0 2.0 3.53.0
On-state voltage vT (V)
I
T(RMS)–PT(AV )
5
(W)
)
4
AV
(
T
3
2
1
Characteristics
Full-cycle sinewave
Conduction angle
=360°
θ=θ
1+θ2
θ
2
θ
1
Average on-state power P
0
0
12345
RMS on-state current I
Tj=125°C
T(RMS
TM341M-L, TM361M-L
I
Ratings
TSM
(A)
TSM
40
30
20
10
Initial junction temperature
Tj=125°C
10 ms
1cycle
50Hz
I
TSM
Surge on-state current I
0
1 5 10 50 100
I
– Tc Ratings
T(RMS)
150
125
(°C)
C
100
75
50
Full-cycle sinewave
Conduction angle
θ= θ1+θ2=360°
Case temperature T
25
0
(A)
)
θ
2
θ
1
0
12345
RMS on-state current I
T(RMS
)
(A)
Number of cycle
I
T(RMS)
150
125
(°C)
a
100
Ambient temperature T
– Ta Ratings
75
50
25
0
0
RMS on-state current I
Full-cycle sinewave
Conduction angle: 360°
Self-supporting
Natural cooling
No wind
1.0 1.50.5 2.0 2.5 3.0
T(RMS
(A)
)
Gate Characteristics
12
10
(V)
8
GF
6
4
Gate voltage v
See graph at the upper right
2
0
0 0.5 1.0 1.5
I
temperature Characteristics
H
(Typical)
10
(mA)
H
5
(T
Holding current I
0
–40 0 75 10025 50 125
Junction temperature Tj (°C)
Gate current i
(T
2
–
+
–T
)
2
1
(V)
4
GT
2
0
Gate trigger voltage V
(V
=30V, IP=3.0A, RGK=
D
+
–
–T
)
1
0
20 40 60
Gate trigger current
I
GF
Tj= –40°C
Tj= –20°C
Tj=25°C
(mA)
GT
(A)
)
∞
Pulse trigger temperature Characteristics vgt
(MODE –
30
10
DC gate trigger
voltage at 25°C
( )( )
GT
V
1
w
t
Gate trigger voltage
at Tj and
vgt
0.1
0.5 1 10 10210
Pulse width t
) (MODE –
vgt
50%
t
Tj= –40°C
–20°C
25°C
75°C
125°C
w
3
4
(µs)
w
10
Pulse trigger temperature Characteristics
(MODE –
30
10
DC gate trigger
current at 25°C
( )( )
GT
I
1
w
t
Gate trigger current
at Tj and
igt
0.1
0.5 1 10 10210
Pulse width t
V
temperature characteristics
GT
(Typical)
1.2
1.0
(V)
GT
0.8
0.6
0.4
Gate trigger voltage V
0.2
MODE (T
MODE (T
MODE (T
0
–40 0 75 10025 50 125
Junction temperature Tj (°C)
) (MODE –
igt
50%
t
Tj= –40°C
–20°C
25°C
75°C
125°C
(VD=6V, RL=10Ω)
–,G–
)
2
+,G+
)
2
+,G–
)
2
w
3
4
(µs)
w
10
gt
i
(Typical)
(Typical)
30
10
DC gate trigger
voltage at 25°C
( )( )
GT
V
1
w
t
Gate trigger voltage
at Tj and
vgt
0.1
0.5 1 10 10210
Pulse width t
30
10
DC gate trigger
current at 25°C
( )( )
GT
I
1
w
t
Gate trigger current
at Tj and
igt
0.1
0.5 1 10 10210
Pulse width t
I
temperature characteristics
GT
(Typical)
24
20
(mA)
GT
10
) (MODE –
Tj= –40°C
–20°C
25°C
75°C
125°C
(µs)
w
) (MODE –
Tj= –40°C
–20°C
25°C
75°C
125°C
(µs)
w
(V
D
–,G–
MODE (T
2
+,G–
MODE (T
2
+,G+
MODE (T
2
Gate trigger current I
0
–40 0 75 10025 50 125
Junction temperature Tj (°C)
vgt
50%
t
w
3
igt
50%
t
w
3
=6V, RL=10Ω)
)
)
)
Tj= –40°C
–20°C
125°C
Tj= –40°C
–20°C
25°C
75°C
125°C
25°C
75°C
(µs)
w
2103
(µs)
w
junction to
operating
environment
t, Time (ms)
)
)
vgt
3
igt
2103
50%
t
w
10
50%
t
w
10
Junction to
case
4
4
10410
5
30
10
DC gate trigger
voltage at 25°C
( )( )
GT
V
1
w
t
Gate trigger voltage
at Tj and
vgt
4
10
4
10
0.1
0.5 1 10 10210
Pulse width t
30
10
DC gate trigger
current at 25°C
( )( )
GT
I
1
w
t
Gate trigger current
at Tj and
igt
0.1
0.5 1 10 10
Pulse width t
Transient thermal resistance
Characteristics
100
(°C/W)
th
10
1
Transient thermal resistance r
0.1
0.1 1 10 10
29
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