TO-220F 16A Triac
TM1641S-L, TM1661S-L
■Features
●Repetitive peak off-state voltage: V
●RMS on-state current: I
●Gate trigger current: I
●Isolation voltage: V
GT
ISO
=1500V(50Hz Sine wave, RMS )
=16A
T(RMS)
=30mA max (MODE , , )
●UL approved type available
=400, 600V
DRM
■Absolute Maximum Ratings
Parameter Symbol
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
TM1641S-L
400
Ratings
150
–40 to
–40 to
1500
TM1661S-L
16
10
2
5
0.5
+
125
+
125
600
External Dimensions
(Unit: mm)
φ
3.3
±0.2
0.3
8.4
±
16.9
13.0min
±0.2
0.2
±
10.0
±0.2
4.0
a
±0.2
b
0.8
±0.2
3.9
2.54
2.2
(1) (2) (3)
1.35
1.35
0.85
2.54
0.2
±
±0.15
±0.15
+0.2
–0.1
0.45
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
Unit Conditions
V
A
A
Conduction angle 360°, Tc=74°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
V
A
W
W
°C
°C
Vrms
50Hz Sine wave, RMS, Terminal to Case, 1 min.
±0.2
4.2
C 0.5
2.8
+0.2
–0.1
±0.2
2.4
a. Part Number
b. Lot Number
Weight: Approx. 2.1g
■Electrical Characteristics
Parameter Symbol
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
44
I
DRM
V
V
I
V
Rth
TM
GT
GT
GD
I
H
0.2
Ratings
typmin max
0.3
0.8
0.7
0.8
1.0
12
16
25
70
25
Unit Conditions
2.0 V
0.1
1.6
mA
V
2.0
2.0
2.0
V
30
30
30
mA
V
mA
°C
3.0
/W
(Tj=25°C, unless otherwise specified)
=
V
, R
D
DRM
GK
V
=
V
, R
D
DRM
GK
Palse test, I
V
=
6V, R
D
V
=
6V, R
D
=
1/2×V
V
D
=
6V
V
D
L
L
=
=
DRM
TM
10Ω, T
10Ω, T
Junction to case
=
, Tj=125
∞
=
, Tj=25
∞
=
20A
=
C
=
C
, Tj=125
25
25
°C
°C
°C
°C
°C
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
v
–
i
Characteristics (max)
T
T
100
50
(A)
T
Tj=125°C
10
5
1
On-state current i
0.5
0.1
0.5
1.0 1.5 2.0 2.5 3.0 3.5
On-state voltage vT (V)
I
– Tc Ratings
T(RMS)
150
125
(°C)
C
100
75
50
Case temperature T
25
0
0
RMS on-state current I
Tj=25°C
Full-cycle sinewave
Conduction angle: 360°
10 20
T(RMS
TM1641S-L, TM1661S-L
I
– Ta Ratings
T(RMS)
150
125
(°C)
a
100
75
50
Ambient temperature T
25
0
0
RMS on-state current I
V
temperature characteristics
GT
(Typical)
1.4
1.2
(V)
GT
1.0
0.8
0.6
0.4
Gate trigger voltage V
0.2
0
(A)
)
0–40 –25 25 50 75 100 125
Junction temperature Tj (°C)
Full-cycle sinewave
Conduction angle :360°
Self-supporting
Natural cooling
No wind
1.0 1.50.5 2.0 2.5 3.0
(A)
)
T(RMS
(V
=6V R
=10 Ω)
D
L
Mode
I
T(RMS)–PT(AV)
24
20
(W)
)
AV
(
T
16
12
8
4
Average on-state power P
0
0
I
temperature characteristics
GT
100
50
(mA)
GT
10
5
Gate trigger current I
1
–40 –25
Characteristics
Full-cycle sinewave
Conduction angle
=360°
θ= θ
1+θ2
θ
2
θ
1
10 20
RMS on-state current I
(V
0 25 50 75 100 125
Junction temperature Tj (°C)
T(RMS
=6V R
D
(A)
)
=10 Ω)
L
Mode
I
temperature Characteristics
H
(Typical)
100
80
(mA)
H
60
40
Holding current I
20
0
–40 –25
0 25 50 75 100 125
Junction temperature Tj (°C)
I
temperature Characteristics
L
(R
=1kΩ)
G-K
(Typical)
120
100
(mA)
80
L
60
40
Latching current I
20
0
25 50 75 100 125
0–40 –25
Junction temperature Tj (°C)
Transient thermal resistance
Characteristics
100
(°C/W )
th
10
1
Transient thermal resistance r
0.1
0.1 1 10 10210310410
Junction to
operating
environment
t, Time (ms)
Junction to
case
5
45