Sanken Electric Co TM1262B-R Datasheet
TO-3PF 12A Triac
TM1262B-R
■Features
●Repetitive peak off-state voltage: V
●RMS on-state current: I
●Gate trigger current: I
●Isolation voltage: V
GT
ISO
=2000V(AC, 1min.)
=12A
T(RMS)
=8mA max (MODE , , )
●For resistive load
●UL approved type available
DRM
=600V
■Absolute Maximum Ratings
Parameter Symbol
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
V
DRM
I
T(RMS)
I
TSM
I
GM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
Ratings
600
120
–40 to
–40 to
2000
12
0.5
±
External Dimensions
(Unit: mm)
5.45
3.2
a
b
0.1
±
15.6
1.5 4.4 1.5
(1) (2) (3)
0.2
±
5.45
0.2
±
1.75
2.15
1.05
0.2
0.2
±
±
5.5
1.6
3.3
+0.2
0.1
–
+0.2
0.1
–
+0.2
0.1
–
0.1
±
9.5
0.3
±
23
(16.2)
0.65
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
+0.2
–
0.2
5.5
±
0.2
3.45
±
0.2
3.35
0.1
a. Part Number
b. Lot Number
Weight: Approx. 6.5g
Unit Conditions
=
, Tj= –40°C to +125°C
V
A
A
2
5
A
W
R
GK
∞
Conduction angle 360°, Tc=98°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
f 50Hz, duty 10%
f 50Hz, duty 10%
W
+
125
+
125
°C
°C
Vrms
50Hz Sine wave, RMS, Terminal to Case, 1 min.
■Electrical Characteristics
Parameter Symbol
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
I
DRM
V
V
I
V
Rth
TM
GT
GT
GD
I
H
0.8
0.4
0.4
2.0
2.0
2.0
0.1
Ratings
typmin max
0.3
1.1
0.6
0.7
2.1
5.0
4.5
5.0
25
6
Unit Conditions
2.0 V
0.1
1.6
mA
V
1.8
1.2
1.2
V
8.0
8.0
8.0
mA
V
mA
2.0
°C/W
, RGK=
D=VDRM
V
I
TM
V
V
V
Tj
D=VDRM
=16A, T
=20V, R
D
=20V, R
D
=
1/2×V
D
=
25
°C
, RGK=
=25°C
C
=40Ω, TC=25°C
L
=40Ω, TC=25°C
L
DRM
Junction to case
, Tj=125°C
∞
, Tj=25°C
∞
, Tj=125
°C
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
60
TM1262B-R
v
–
i
Characteristics (max)
T
T
100
(A)
Tj=125°C
T
10
1
On-state current i
0.1
0.4
0.8 1.2 2.0 2.41.6 3.62.8 3.2
On-state voltage vT (V)
I
– Tc Ratings
T(RMS)
150
125
(°C)
C
100
75
50
Case temperature T
25
0
24 81061412
0
RMS on-state current I
Tj= 25°C
Full-cycle sinewave
Conduction angle: 360°
(A)
)
T(RMS
I
Ratings
TSM
140
120
(A)
TSM
100
80
60
40
20
Surge on-state current I
0
1 5 10 50 100
Number of cycle
Initial junction temperature
Tj=125°C
10 ms
1cycle
Gate Characteristics
50
VGM=10V
10
(V)
25°C V
=1.8V
GF
Gate voltage v
0.1
GT1
5
–40°C V
=2.2V
GT1
–40°C V
1
25°C
5
V
VGD=0.1V
1 10 100 1000 5000
GT2.3
=1.2V
=8mA
GT
25°C I
Gate current i
GT2,3
=1.5V
=25mA
GT
–40°C I
P
G(AV
(mA)
GF
=0.5W
)
Mode
PGM=5W
I
T(RMS)–PT(AV)
14
I
TSM
=2A
GM
I
Full-cycle sinewave
Conduction angle: 360°
12
(W)
)
AV
(
T
10
8
6
4
2
Average on-state power P
0
0681024 12
V
temperature characteristics
GT
(Typical)
2.4
2.0
(V)
GT
1.6
1.2
0.8
Gate trigger voltage V
0.4
0
Characteristics
RMS on-state current I
0–40 75 100 1255025
Junction temperature Tj (°C)
T(RMS
(VD=20V R
(A)
)
=40 Ω)
L
Mode
V
(Mode ) temperature characteristics
GT
(Typical)
2.4
2.0
(V)
GT
1.6
1.2
0.8
Gate trigger voltage V
0.4
0
I
temperature characteristics
L
(Typical)
1000
(mA)
100
L
10
Latching current I
0–40 75 100 1255025
Junction temperature Tj (°C)
(VD=20V R
(R
=40 Ω)
L
G-K
=∞)
I
temperature characteristics
GT
(Typical)
50
10
5
Gate trigger current IGT (mA)
1
0.5
r
th( j-c) –t
5
(°C/W)
th (j-c)
1
0–40 75 100 1255025
Junction temperature Tj (°C)
Characteristics
(VD=20V R
=40 Ω)
L
I
temperature characteristics
H
(Typical)
50
(mA)
10
H
5
Holding current I
1
0.5
0–40 75 100 1255025
Junction temperature Tj (°C)
(R
=1kΩ)
G-K
1
0–40 75 100 1255025
Junction temperature Tj (°C)
Transient thermal resistance r
0.5
10110
2
10
10
t, Time (ms)
3
4105
61
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