Sanken Electric Co TM1261S-R, TM1241S-R Datasheet

TO-220F 12A Triac

TM1241S-R, TM1261S-R

■Features

●Repetitive peak off-state voltage: V

●RMS on-state current: I

●Gate trigger current: I

●Isolation voltage: V

GT

ISO

=1500V(50Hz Sine wave, RMS )

=12A

T(RMS)

=8mA max (MODE , , )

●For resistive load

●UL approved type available

=400, 600V

DRM

■Absolute Maximum Ratings

Parameter Symbol

Repetitive peak off-state voltage

RMS on-state current

Surge on-state current

Peak gate voltage

Peak gate current

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

Isolation voltage

V

DRM

I

T(RMS)

I

TSM

V

GM

I

GM

P

GM

P

G(AV)

Tj

Tstg

V

ISO

TM1241S-R

400

Ratings

110

–40 to

–40 to

1500

TM1261S-R

12

—

2

5

0.5

+

125

+

125

600

External Dimensions

(Unit: mm)

φ

3.3

±0.2

8.4

±0.3

16.9

13.0min

±0.2

±0.2

±0.2

0.2

±

4.0

0.8

3.9

2.54

10.0

a
b

2.2

(1) (2) (3)

±0.2

1.35

1.35

0.85

2.54

±0.2

±0.15

±0.15

+0.2
–0.1

0.45

(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)

Unit Conditions

V

A

A

Conduction angle 360°, Tc=84°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C

V

A

W

W

°C
°C

Vrms

50Hz Sine wave, RMS, Terminal to Case, 1 min.

±0.2

4.2
C 0.5

2.8

+0.2
–0.1

±0.2

2.4

a. Part Number
b. Lot Number

Weight: Approx. 2.1g

■Electrical Characteristics

Parameter Symbol

Off-state current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Thermal resistance

58

I

DRM

V

V

I

V

Rth

TM

GT

GT

GD

I

H

0.1

Ratings

typmin max

1.1

0.6

0.7

2.1

5

4.5

5

25

6

Unit Conditions

2.0 V

0.1

1.6

mA

V

1.8

1.2

1.2

V

8

8

8

mA

V

mA

3.0

°C/W

(Tj=25°C, unless otherwise specified)

=

V

, R

D

DRM

GK

V

=

V

, R

D

DRM

GK

Pulse test, I

V

=

6V, R

D

V

=

6V, R

D

=

1/2×V

V

D

=

6V

V

D

L

L

=

=

DRM

TM

10Ω, T

10Ω, T

Junction to case

=

, Tj=125

∞

=

, Tj=25

∞

=

16A

=

C

=

C

, Tj=125

25

25

°C

°C

°C

°C

°C

+

+

T

, G

2

+

–

T

, G

2

–

–

T

, G

2

–

+

T

, G

2

+

+

T

, G

2

+

–

T

, G

2

–

–

T

, G

2

–

+

T

, G

2

TM1241S-R, TM1261S-R

v

– iT Characteristics (max)

T

100

50

(A)

T

10

Tj=125°C

5

1

On-state current i

0.5

0.1

I

T(RMS)–PT(AV )

18

16

(W)

)

14

AV

(
T

12

10

8

6

4

2

Average on-state power P

0

Tj=25°C

0.5

1.0 1.5 2.0 2.5 3.0 3.5

On-state voltage vT (V)

Characteristics

Full-cycle sinewave
Conduction angle: 360°

0

24 861210 14

RMS on-state current I

T(RMS

(A)

)

Pulse trigger temperature Characteristics vgt

(MODE –

2.0

DC gate trigger

voltage at 25°C

1.5

( )( )

GT

V

Ta=– 40°C

) (MODE –

0°C

25°C

50°C

75°C

100°C

125°C

vgt

t

w

–20°C

I

– Tc Ratings

T(RMS)

150

125

(°C)

C

100

75

50

Case temperature T

25

0

0

2 4 6 8 10 12 14

RMS on-state current I

(Typical)

I

Ratings

TSM

120

100

(A)

TSM

80

60

40

20

Surge on-state current I

0

1 5 10 50 100

Full-cycle sinewave
Conduction angle: 360°

Initial junction temperature

Tj=125°C

10 ms

1cycle

Number of cycle

I

T(RMS)

150

125

(°C)

a

100

Ambient temperature T

(A)

)

T(RMS

2.0

DC gate trigger

voltage at 25°C

1.5

( )( )

GT

V

Ta=– 40°C

–20°C

0°C

25°C

50°C

75°C

Gate Characteristics

12

I

TSM

– Ta Ratings

Full-cycle sinewave
Conduction angle: 360°
Self-supporting
Natural cooling
No wind

75

50

25

0

0

1.0 1.50.5 2.0 2.5 3.0

RMS on-state current I

) (MODE –

vgt

t

w

100°C

125°C

T(RMS

)

(A)

DC gate trigger

10

(V)

8

GF

6

4

Gate voltage v

See graph at the upper right

2

0

0123

I

temperature Characteristics

H

(Typical)

50

(mA)

10

H

5

Holding current I

1

0.5
–40 0 50 75 10025 125

Junction temperature Tj (°C)

2.0

voltage at 25°C

1.5

( )( )

GT

V

Ta=– 40°C

–20°C

(V)

3

GT

2

1

0

P

GM

=5W

Gate trigger voltage V

Gate current i

)

vgt

0°C

25°C

50°C

75°C

100°C

125°C

Tj=25°C

0

10 20 30

Gate trigger current

I

GT

(A)

GF

t

w

(mA)

Tj= –40°C

Tj= –20°C

(R

=∞)

GK

1.0

w

t

Gate trigger voltage

at Ta and

vgt

0.5

10.5 10 100 1000

Pulse width t

(µs)

w

Pulse trigger temperature Characteristics

(MODE –

30

10

DC gate trigger

current at 25°C

5

( )( )

GT

I

1

w

t

0.5

Gate trigger current

at Ta and

igt

0.2

0.5 1 10 100 1000

Pulse width t

V

temperature characteristics

GT

(Typical)

1.8

1.6

(V)

1.4

GT

1.2

1.0

0.8

0.6

0.4

Gate trigger voltage V

0.2

M

O

D

E

(

T

MODE (T

–

–

2

,G

M

O

DE (

+

T

–

2

,G

)

0
–40 0 75 1005025 125

Junction temperature Tj (°C)

) (MODE –

igt

t

0°C

25°C

w

50°C

(µs)

75°C

100°C

125°C

w

Ta=– 40°C

–20°C

(VD=20V, RL=40Ω)

+

2

,G

+

)

)

gt (Typical)

i

1.0

w

t

Gate trigger voltage

at Ta and

vgt

0.5

10.5 10 100 1000

Pulse width t

30

10

DC gate trigger

current at 25°C

5

( )( )

GT

I

1

w

t

0.5

Gate trigger current

at Ta and

igt

0.2

I

GT

(Typical)

50

(mA)

GT

10

5

Ta=– 40°C

0.5 1 10 100 1000

Pulse width t

temperature characteristics

MODE (T
MODE (T

–20°C

MODE (T

(µs)

w

0°C

25°C

50°C

75°C

100°C

125°C

(µs)

w

(VD=20V, RL=40Ω)

–

, G–)

2

+

, G+)

2

+

, G–)

2

Gate trigger current I

1

–40 0 50 75 10025 125

Junction temperature Tj (°C)

1.0

w

t

Gate trigger voltage

at Ta and

vgt

0.5

10.5 10 100 1000

Pulse width t

) (MODE –

igt

t

w

30

10

DC gate trigger

current at 25°C

( )( )

GT

I

w

t

0.5

Gate trigger current

at Ta and

igt

0.2

Ta=– 40°C

–20°C

0°C

25°C

5

1

0.5 1 10 100 1000

Pulse width t

Transient thermal resistance
Characteristics

100

(°C/W)

th

10

1

0.1

Transient thermal resistance r

0.05

0.1 1 10 10 10

(µs)

w

)

igt

50°C

75°C

100°C

125°C

(µs)

w

Junction to
operating
environment

23104105

t, Time (ms)

t

w

Junction to
case

59