Sanken Electric Co TM1261S-L Datasheet

Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbol
Ratings
Unit Conditions
V
Conduction angle 360°, Tc=85°C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
50Hz Sine wave, RMS, Terminal to Case, 1 min.
400
TM1241S-L
600
TM1261S-L
A
A
V
A
W
W
°C °C
Vrms
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
12.0
120
10
2
5
0.5
–40 to
+
125
–40 to
+
125
1500
V
T
2
+
, G
+
T
2
+
, G
T
2
, G
T
2
, G
+
T
2
+
, G
+
T
2
+
, G
T
2
, G
T
2
, G
+
V
mA
V
mA
°C
/W
Parameter Symbol
Ratings
typmin max
Unit Conditions
mA
I
DRM
V
TM
V
GT
I
GT
V
GD
I
H
Rth
0.7
0.8
1.0
12
16
25
70
20
0.8
2.0
30
30
30
3.0
0.2
1.6
2.0
2.0
0.1
0.3
2.0 V
D
=
V
DRM
, R
GK
=
, Tj=125
°C
V
D
=
V
DRM
, R
GK
=
, Tj=25
°C
Pulse test, I
TM
=
16A
V
D
=
6V, R
L
=
10, T
C
=
25
°C
V
D
=
6V, R
L
=
10, T
C
=
25
°C
Junction to case
V
D
=
6V
V
D
=
1/2×V
DRM
, Tj=125
°C
42
TM1241S-L, TM1261S-L
TO-220F 12A Triac
Features
Repetitive peak off-state voltage: V
DRM
=400, 600V
RMS on-state current: I
T(RMS)
=12A
Gate trigger current: I
GT
=30mA max (MODE , , )
Isolation voltage: V
ISO
=1500V(50Hz Sine wave, RMS )
UL approved type available
16.9
±0.3
8.4
±0.2
0.8
±
0.2
3.9
±0.2
4.0
±
0.2
10.0
±0.2
4.2
±0.2
1.35
±0.15
1.35
±0.15
2.4
±
0.2
2.2
±0.2
φ
3.3
±
0.2
0.85
+0.20.1
+0.20.1
C 0.5
2.8
13.0min
2.54
2.54
0.45
Weight: Approx. 2.1g
External Dimensions
(Unit: mm)
(1) (2) (3)
a b
(1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G)
a. Part Number b. Lot Number
(Tj=25°C, unless otherwise specified)
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
0
0
25
50
100
75
150
125
1.0 1.50.5 2.0 2.5 3.0
0.5
1
5
10
50
100
1.00.5 2.0 3.53.0
40
60
80
140
160
100
120
1 5 10 50 100
0
2
4
6
8
10
12
0123
0
0
1
2
3
20 40 8060
–40 0 75 10025 50 125
2
10
5
100
50
0
0
2
4
12
10
8
6
18
14
16
246 8 141210
0
0
25
50
100
75
150
125
24 6 8 141210
0.5 1 10 10 10
0.5
1.0
1.5
2.0
23
0.5 1 10 10 10
0.5
1.0
1.5
2.0
23
0.5 1 10 10 10
0.5
1.0
1.5
2.0
23
0.5 1 10 10 10
0.2
0.5
1
5
30
10
23
0.5 1 10 10 10
0.2
0.5
1
5
30
10
23
0.5 1 10 10 10
0.2
0.5
1
5
30
10
23
0.1 1 10 10 10
0.1
1
100
10
23104105
–40 0 75 1005025 125
0
1.0
0.8
0.6
0.4
0.2
1.2
–40 0 75 1005025 125
1
50
5
10
1.5 2.5
43
TM1241S-L, TM1261S-L
On-state voltage vT (V)
On-state current i
T
(A)
v
T
iT Characteristics (max)
Tj=25°C
Tj=125°C
Number of cycle
Surge on-state current I
TSM
(A)
I
TSM
Ratings
1cycle
10 ms
I
TSM
Tj=125°C
Initial junction temperature
Gate current i
GF
(A)
Gate voltage v
GF
(V)
Gate Characteristics
P
GM
=5W
See graph at the upper right
Gate trigger current
I
GT
(mA)
Gate trigger voltage V
GT
(V)
Tj= –40°C
Tj=25°C
Tj= –20°C
RMS on-state current I
T(RMS
)
(A)
I
T(RMS)–PT(AV )
Characteristics
Average on-state power P
T
(
AV
)
(W)
Full-cycle sinewave Conduction angle: 360°
RMS on-state current I
T(RMS
)
(A)
I
T(RMS)
– Tc Ratings
Case temperature T
C
(°C)
Full-cycle sinewave Conduction angle: 360°
I
T(RMS)
– Ta Ratings
RMS on-state current I
T(RMS
)
(A)
Ambient temperature T
a
(°C)
Full-cycle sinewave Conduction angle: 360° Self-supporting Natural cooling No wind
Junction temperature Tj (°C)
Holding current I
H
(mA)
I
H
temperature Characteristics
(Typical)
(V
D
=30V, R
GK
=)
(T
2
+
–T
1
)
(T
2
–T
1
+
)
Pulse trigger temperature Characteristics
i
gt (Typical)
(MODE –
) (MODE –
) (MODE –
)
(MODE –
) (MODE –
) (MODE –
)
Pulse trigger temperature Characteristics vgt (Typical)
Pulse width t
w
(µs)
vgt
V
GT
DC gate trigger
voltage at 25°C
( )( )
Gate trigger voltage
at Tj and
t
w
Pulse width t
w
(µs)
vgt
V
GT
DC gate trigger
voltage at 25°C
( )( )
Gate trigger voltage
at Tj and
t
w
Pulse width t
w
(µs)
vgt
V
GT
DC gate trigger
voltage at 25°C
( )( )
Gate trigger voltage
at Tj and
t
w
Pulse width t
w
(µs)
igt
I
GT
DC gate trigger
current at 25°C
( )( )
Gate trigger current
at Tj and
t
w
Pulse width t
w
(µs)
igt
I
GT
DC gate trigger
current at 25°C
( )( )
Gate trigger current
at Tj and
t
w
Pulse width t
w
(µs)
igt
I
GT
DC gate trigger
current at 25°C
( )( )
Gate trigger current
at Tj and
t
w
0°C
25°C
50°C
75°C
100°C
125°C
Tj= –40°C
–20°C
0°C
25°C
50°C
75°C
100°C
125°C
Tj= –40°C
–20°C
0°C
25°C
50°C
75°C
100°C
125°C
Tj= –40°C
–20°C
0°C
25°C
50°C
75°C
100°C
125°C
Tj= –40°C
–20°C
igt
t
w
igt
t
w
igt
t
w
vgt
t
w
0°C
25°C
50°C
75°C
100°C
125°C
Tj= –40°C
–20°C
vgt
t
w
0°C
25°C
50°C
75°C
100°C
125°C
Tj= –40°C
–20°C
vgt
t
w
Junction temperature Tj (°C)
Gate trigger voltage V
GT
(V)
V
GT
temperature characteristics
(Typical)
(VD=6V, RL=10Ω)
MODE (T
2
+,G+
)
MODE (T
2
+,G–
)
MODE (T
2
–,G–
)
I
GT
temperature characteristics
(Typical)
Junction temperature Tj (°C)
Gate trigger current I
GT
(mA)
(VD=6V, RL=10Ω)
MODE (T
2
+
, G+)
MODE (T
2
+
, G–)
MODE (T
2
, G–)
t, Time (ms)
Transient thermal resistance r
th
(°C/W)
Transient thermal resistance Characteristics
Junction to operating environment
Junction to case
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