Sanken Electric Co TM1061S-L, TM1041S-L Datasheet
TO-220F 10A Triac
TM1041S-L, TM1061S-L
■Features
●Repetitive peak off-state voltage: V
●RMS on-state current: I
●Gate trigger current: I
●Isolation voltage: V
GT
ISO
=1500V(50Hz Sine wave, RMS )
=10A
T(RMS)
=30mA max (MODE , , )
●UL approved type available
=400, 600V
DRM
■Absolute Maximum Ratings
Parameter Symbol
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
TM1041S-L
400
Ratings
10.0
100
–40 to
–40 to
1500
TM1061S-L
10
2
5
0.5
+
125
+
125
600
External Dimensions
(Unit: mm)
φ
3.3
±0.2
8.4
±0.3
16.9
13.0min
±0.2
±0.2
±0.2
±0.2
4.0
0.8
3.9
2.54
10.0
a
b
2.2
(1) (2) (3)
±0.2
1.35
1.35
0.85
2.54
±0.2
±0.15
±0.15
+0.2
–0.1
0.45
(1). Terminal 1 (T1)
(2). Terminal 2 (T
(3). Gate (G)
Unit Conditions
V
A
A
Conduction angle 360°, Tc=90°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
V
A
W
W
°C
°C
Vrms
50Hz Sine wave, RMS, Terminal to Case, 1 min.
±0.2
4.2
C 0.5
2.8
+0.2
–0.1
0.2
±
2.4
a. Part Number
)
b. Lot Number
2
Weight: Approx. 2.1g
■Electrical Characteristics
Parameter Symbol
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
40
I
DRM
V
V
I
V
Rth
TM
GT
GT
GD
I
H
0.2
Ratings
typmin max
0.3
0.8
0.7
0.8
0.9
10
13
15
30
15
Unit Conditions
2.0 V
0.1
1.6
mA
V
2.0
2.0
2.0
V
30
30
30
mA
V
mA
°C
3.3
/W
(Tj=25°C, unless otherwise specified)
=
V
, R
D
DRM
GK
V
=
V
, R
D
DRM
GK
Pulse test, I
V
=
6V, R
D
V
=
6V, R
D
=
1/2×V
V
D
=
6V
V
D
L
L
=
=
DRM
TM
10Ω, T
10Ω, T
Junction to case
=
, Tj=125
∞
=
, Tj=25
∞
=
14A
=
C
=
C
, Tj=125
25
25
°C
°C
°C
°C
°C
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
TM1041S-L, TM1061S-L
v
– iT Characteristics (max)
T
100
50
(A)
T
10
Tj=125°C
5
1
On-state current i
0.5
0.1
I
T(RMS)–PT(AV )
14
12
(W)
)
AV
(
T
10
8
6
4
2
Average on-state power P
0
Tj=25°C
0.5
1.0 1.5 2.0 2.5 3.0 3.5
On-state voltage vT (V)
Characteristics
Full-cycle sinewave
Conduction angle: 360°
2468 1210
0
RMS on-state current I
T(RMS
I
T(RMS)
150
125
(°C)
C
100
75
50
Case temperature T
25
0
(A)
)
0
Pulse trigger temperature Characteristics vgt (Typical)
(MODE –
2.0
1.5
DC gate trigger
voltage at 25°C
( )( )
GT
V
Tj= –40°C
) (MODE –
25°C
50°C
75°C
100°C
125°C
vgt
t
w
–20°C
0°C
I
TSM
140
120
(A)
TSM
100
Surge on-state current I
– Tc Ratings
Full-cycle sinewave
Conduction angle: 360°
2468 1210
RMS on-state current I
2.0
1.5
DC gate trigger
voltage at 25°C
( )( )
GT
V
Ratings
Initial junction temperature
Tj=125°C
10 ms
1cycle
80
60
40
20
1 5 10 50 100
Number of cycle
I
– Ta Ratings
T(RMS)
150
125
(°C)
a
100
75
50
Ambient temperature T
25
0
0
T(RMS
(A)
)
Tj= –40°C
–20°C
RMS on-state current I
) (MODE –
vgt
0°C
25°C
50°C
75°C
100°C
125°C
I
TSM
Full-cycle sinewave
Conduction angle: 360°
Self-supporting
Natural cooling
No wind
1.0 1.50.5 2.0 2.5 3.0
t
w
T(RMS
(A)
)
Gate Characteristics
12
10
(V)
8
GF
Gate voltage v
I
temperature Characteristics
H
(Typical)
100
50
(mA)
H
10
Holding current I
2.0
1.5
DC gate trigger
voltage at 25°C
( )( )
GT
V
P
GM
6
4
2
0
5
2
–40 0 50 75 10025 125
=5W
See graph at the upper right
0123
Gate current i
(T
2
–
+
(T
–T
)
2
1
Junction temperature Tj (°C)
Tj= –40°C
–20°C
0°C
25°C
50°C
75°C
+
–T
100°C
1
)
125°C
(V)
3
GT
2
1
0
0
Gate trigger current
Gate trigger voltage V
(A)
GF
(V
=30V, R
D
–
)
vgt
t
w
Tj=25°C
20 40 8060
I
GT
Tj= –20°C
(mA)
Tj= –40°C
=∞)
GK
1.0
w
t
Gate trigger voltage
at Tj and
vgt
0.5
0.5 1 10 10 10
Pulse width t
23
(µs)
w
Pulse trigger temperature Characteristics
(MODE –
30
Pulse width t
MODE (T
MODE (T
MODE (T
Tj= –40°C
10
DC gate trigger
current at 25°C
5
( )( )
GT
I
1
w
t
0.5
Gate trigger current
at Tj and
igt
0.2
0.5 1 10 10 10
V
temperature characteristics
GT
(Typical)
1.2
1.0
(V)
GT
0.8
0.6
0.4
Gate trigger voltage V
0.2
0
–40 0 75 10025 50 125
Junction temperature Tj (°C)
) (MODE –
igt
–20°C
(VD=6V, RL=10Ω)
–,G–
)
2
+,G+
)
2
+,G–
)
2
0°C
25°C
t
50°C
75°C
100°C
125°C
23
(µs)
w
1.0
w
t
Gate trigger voltage
at Tj and
vgt
0.5
0.5 1 10 10 10
Pulse width t
gt (Typical)
i
30
w
10
DC gate trigger
current at 25°C
( )( )
GT
I
w
t
0.5
Gate trigger current
at Tj and
igt
0.2
I
GT
(Typical)
100
50
(mA)
GT
10
Tj= –40°C
5
1
0.5 1 10 10 10
Pulse width t
temperature characteristics
MODE (T
MODE (T
MODE (T
5
23
(µs)
w
) (MODE –
igt
t
–20°C
0°C
25°C
–
2
+
2
+
2
50°C
, G–)
, G–)
, G+)
w
75°C
100°C
125°C
23
(µs)
w
(VD=6V, RL=10Ω)
1.0
w
t
Gate trigger voltage
at Tj and
vgt
0.5
0.5 1 10 10 10
30
10
DC gate trigger
current at 25°C
5
( )( )
GT
I
1
w
t
0.5
Gate trigger current
at Tj and
igt
0.2
0.5 1 10 10 10
Pulse width t
Tj= –40°C
Pulse width t
Transient thermal resistance
Characteristics
100
(°C/W)
th
10
1
–20°C
0°C
25°C
Junction to
operating
environment
50°C
w
w
75°C
(µs)
)
100°C
(µs)
23
igt
t
w
125°C
23
Junction to
case
Gate trigger current I
1
–40 0 50 75 10025 125
Junction temperature Tj (°C)
Transient thermal resistance r
0.1
0.1 1 10 10 10
t, Time (ms)
23104105
41
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