TO-220S Thyristor with built-in reverse diode for HID lamp ignition
TFC561D
■Features
●Repetitive peak off-state voltage: V
●Repetitive peak surge on-state current: I
●Critical rate-of-rise of on-state current: di/dt=1200A /µs
●Gate trigger current: I
=20mA max
GT
●With built-in reverse diode
DRM
=600V
TRM
=430A
External Dimensions
(Unit: mm)
1.2
2.54
±
0.2
±
0.5
±
10.2
(1) (2) (3)
0.3
1.27
0.86
0.76
2.54
(1.4)
0.3
±
8.6
±
0.2
+0.2
–0.1
±
0.1
±
0.5
0.5
–0.5
+0.3
±
10.0
11.3
(1). Cathode(K)
(2). Anode (A)
(3). Gate (G)
±
0.2
4.44
±
0.2
1.3
±
0.2
2.59
0.5
±
11.0
0.1
±
0.4
Weight: Approx. 1.5g
■Absolute Maximum Ratings
Parameter Symbol
Repetitive peak off-state voltage
Repetitive surge peak on-state current
Critical rate-of-rise of on-state current
Peak forward gate current
Peak gate power loss
Average gate power loss
Peak reverse gate voltage
Diode repetitive peak surge forward current
Junction temperature
Storage temperature
✽ The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.
V
I
di/dt
I
P
P
V
I
Tstg
DRM
TRM
FGM
GM
G(AV)
RGM
FRM
Tj
Ratings
430
1200
2.0
5.0
0.5
5
240
– 40 to +125
– 40 to +125
Unit Conditions
V600
A
A/µs
A
W
W
V
A
°C
°C
Tj= –40 to +125°C, R
V
430V, 100kcycle, Wp
D
✽
f 50Hz, duty 10%
f 50Hz, duty 10%
f 50Hz
V
430V, 100kcycle, Wp
D
GK
=1kΩ
=
1.3µs, Ta=125°C
=
1.3µs, Ta=125°C
✽
✽
Measurement circuit
L
V
D
G
1
C
■Electrical Characteristics
Parameter Symbol
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Off-state current (1)
Off-state current (2)
Thermal resistance
Diode forward voltage
I
I
V
V
V
DRM
DRM
Rth
TM
GT
I
GT
GD
I
H
(1)
(2)
V
F
0.1
2
Sample
G
2
Ratings
typmin max
10.0
1.4
1.5
100
4.0
1.4
Current waveform
100A/div
20
1
°C/W
(1cycle)
(Ta=25°C)
2µs/div
Unit Conditions
V
V
mA
V
mA
µA
mA
V
IT=10A
=6V, R
V
D
V
D
V
D
R
G–K
V
D=VDRM
VD=V
=10Ω
L
=6V, R
=10Ω
L
=480V, Tj=125°C
=1kΩ, Tj=25°C
, R
G–K
, R
DRM
G–K
Junction to case
=10A
I
F
=1kΩ, Tj=25°C
=1kΩ, Tj=125°C
(Tj=25°C)
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