Sanken Electric Co TF861M, TF841M, TF821M Datasheet

TO-220 8A Thyristor

TF821M, TF841M, TF861M

■Features

●Repetitive peak off-state voltage: V

●Average on-state current: I

●Gate trigger current: I

=15mA max

GT

T(AV)

=8A

=200, 400, 600V

DRM

■Absolute Maximum Ratings

Parameter Symbol

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

RMS on-state current

Surge on-state current

Peak forward gate current

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

V

DRM

V

RRM

V

DSM

V

RSM

I

T(AV)

I

T(RMS)

I

TSM

I

FGM

V

FGM

V

RGM

P

P

G (AV)

Tstg

TF821M TF841M TF861M

200

200 600

300 700

300 700

GM

Tj

Ratings

400

400

500

500

8.0

12.6

120

2.0

10

5.0

5.0

0.5

–40 to +125

–40 to +125

600

External Dimensions

(Unit: mm)

Unit Conditions

V

V

V

V

A

A

A

A

V

V

W

W

°C
°C

10.4max

0.2

±

3.0

0.2

16.7max

±

a

8.8

b

12.0 min

4.0 max

0.1

±

2.5

(1) (2) (3)

Tj= –40 to +125°C, R

1.35

2.5

φ

±

0.1

±

±

0.1

3.75

0.15

(1). Cathode(K)
(2). Anode (A)
(3). Gate (G)

GK

50Hz Half-cycle sinewave, Continuous current, Tc=83°C

50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C

f 50Hz, duty 10%

f 50Hz

f 50Hz, duty 10%

5.0max

2.1max

0.65

±

0.2

1.7

a. Part Number
b. Lot Number

Weight: Approx. 2.6g

=1kΩ

+0.2
–0.1

■Electrical Characteristics

Parameter Symbol

Off-state current

Reverse current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Critical rate-of-rise of off-state voltage

Turn-off time

Thermal resistance

14

I

DRM

I

RRM

V

TM

V

GT

I

GT

V

GD

I

H

dv/dt

tq

Rth

0.1

Ratings

typmin max

5.0

4.0

50

30

2.0

2.0

1.4

1.5

15

2.7

Unit Conditions

mA

mA

V

V

mA

V

mA

V/µS

µS

°C/

W

°C,

Tj=125

T

=25

C

V

=6V, R

D

V

=1/2×V

D

R

GK

VD=

Tc= 25

VD=V

°C,

ITM=15A

=10Ω, T

L

DRM

=1kΩ, Tj=25

1/2×V

DRM

, Tj=125

°C

Junction to case

DRM(VRRM

C

, Tj=125

°C

°C,

=25

RGK=

°C

°C,

), R

R

GK

1kΩ, C

GK

=1kΩ

=1kΩ

=

0.033µF

GK

v

–

i

Characteristics (max)

T

T

100

50

°C

(A)

T

10

On-state current i

0.5

0.3

°C

Tj=125

Tj=25

5

1

1.0 2.0 4.03.0

On-state voltage vT (V)

I

Ratings

TSM

140

(A)

120

TSM

100

80

60

Surge on-state current I

40

1 5 10 50 100

Initial junction temperature

Tj=125°C

1 cycle

Number of cycle

TF821M, TF841M, TF861M

Gate Characteristics

10ms

12

I

TSM

10

(V)

GF

8

6

Gate voltage v

4

2

See graph at the upper right

0

0123

(V)

2

GT

P

1

G

M

=5W

0

Gate trigger voltage V

Gate current i

Tc=25°C

0

10 20 30

Gate trigger current IGT (mA)

(A)

GF

Tc=–40°C

Tc=–20°C

I

T(AV)–PT(AV)

18

16

(W)

)
AV

14

(
T

12

10

8

6

4

Average on-state power P

2

0

0

Characteristics

50Hz Half-cycle sinewave

θ : Conduction angle

180°0°

θ

60°

°

θ=30

2101264148

°

150

°

120

90°

Average on-state current I

Pulse trigger temperature

v

gt

Characteristics

30

10

DC gate trigger

voltage at 25°C

( )( )

GT

V

1

w

t

Gate trigger voltage

at Ta and

0.1

vgt

0.5

11010210

(Typical)

TC=–40°C

–20°C

25°C

75°C

Pulse width t

125°C

I

– Tc Ratings

T(AV)

150

125

(°C)

C

100

75

50

Case temperature T

25

0

0

60°

θ=30°

Average on-state current I

90°

120°

180

°

T(AV

DC

(A)

)

Pulse trigger temperature
Characteristics

vgt

50%

t

w

3

4

(µs)

w

10

30

10

DC gate trigger

current at 25°C

( )( )

GT

I

1

w

t

Gate trigger current

at Ta and

igt

0.1

0.5

11010

gt

i

TC=–40°C

–20°C

Pulse width tw (µs)

180°

150°

(Typical)

25°C

75°C

125°C

2

50Hz Half-cycle sinewave

θ: Conduction angle

θ 180°0°

DC

10 12 14 168642

(A)

)

T(AV

igt

t

3

10

I

temperature Characteristics

H

(Typical)

(mA)

H

26

20

10

50%

w

(RGK=1kΩ)

Holding current I

4

10

0

–40 0 75 10025 50 125

Case temperature Tc (°C)

V

temperature Characteristics

GT

(Typical)

1.0

0.8

(V)

GT

0.6

0.4

0.2

Gate trigger voltage V

0

–40 0 75 10025 50 125

(V

D

Junction temperature Tj (°C)

=6V, RL=10Ω)

I

temperature Characteristics

GT

(Typical)

14

12

(mA)

10

GT

8

6

4

Gate trigger current I

2

0

–40 0 75 10025 50 125

(V

Junction temperature Tj (°C)

=6V, RL=10Ω)

D

Transient thermal resistance
Characteristics

10

(°C/W )

th

1

Transient thermal resistance r

0.1
11010

(Junction to case)

2

t, Time (ms)

3

10

4

10

15