Sanken Electric Co TF861S, TF841S, TF821S Datasheet

TO-220F 8A Thyristor

TF821S, TF841S, TF861S

■Features

●Repetitive peak off-state voltage: V

●Average on-state current: I

●Gate trigger current: I

●Isolation voltage: V

=15mA max

GT

=1500V(50Hz Sine wave, RMS)

ISO

T(AV)

=8A

●UL approved type available

=200, 400, 600V

DRM

■Absolute Maximum Ratings

Parameter Symbol

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

RMS on-state current

Surge on-state current

Peak forward gate current

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

Isolation voltage

V

DRM

V

RRM

V

DSM

V

RSM

I

T(AV)

I

T(RMS)

I

TSM

I

FGM

V

FGM

V

RGM

P

P

G(AV)

Tj

Tstg

V

TF821S TF841S TF861S

200

200 600

300 700

300 700

GM

ISO

Ratings

400

400

500

500

8.0

12.6

120

2.0

10

5.0

5.0

0.5

–40 to +125

–40 to +125

1500

600

External Dimensions

(Unit: mm)

φ

3.3

±0.2

0.3

8.4

±

16.9

13.0min

±0.2

±0.2

±0.2

±0.2

4.0

0.8

3.9

2.54

10.0

a
b

2.2

(1) (2) (3)

±0.2

±0.2

±0.15

1.35

0.15

±

1.35
+0.2

–0.1

0.85

2.54

(1). Cathode(K)
(2). Anode (A)
(3). Gate (G)

0.45

Unit Conditions

V

V

V

Tj= –40 to +125°C, R

GK

V

A

50Hz Half-cycle sinewave, Continuous current, Tc=87°C

A

A

A

V

V

W

50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C

f 50Hz, duty 10%

f 50Hz

f 50Hz, duty 10%

W

°C
°C

V

50Hz Sine wave, RMS, Terminal to Case, 1 min.

±0.2

4.2
C 0.5

2.8

+0.2

±0.2

–0.1

2.4

a. Part Number
b. Lot Number

Weight: Approx. 2.1g

=1kΩ

■Electrical Characteristics

Parameter Symbol

Off-state current

Reverse current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Critical rate-of-rise of off-state voltage

Turn-off time

Thermal resistance

16

I

DRM

I

RRM

V

TM

V

GT

I

GT

V

GD

I

H

dv/dt

tq

Rth

0.1

Ratings

typmin max

5.0

4.0

50

30

2.0

2.0

1.4

1.5

15

3.6

Unit Conditions

mA

mA

V

V

mA

V

mA

V/µS

µS

°C/W

°C,

Tj=125

T

=25

C

V

=6V, R

D

V

=1/2 ×V

D

R

GK

VD=

Tc=25

VD=V

°C,

ITM=15A

=10Ω, T

L

DRM

=1kΩ, Tj=25

1/2×V

DRM

, Tj=125

°C

Junction to case

DRM(VRRM

C

, Tj=125

°C

°C,

=25

RGK=

°C

°C,

), R

R

GK

1kΩ, C

GK

=1kΩ

=1kΩ

=

0.033µF

GK

v

–

i

Characteristics (max)

T

T

100

50

(A)

T

Tj =125°C

10

5

On-state current i

1

0.8

1.0 2.0 3.0

On-state voltage vT (V)

Tj = 25°C

I

Ratings

TSM

140

(A)

120

TSM

100

80

60

40

Surge on-state current I

20

1 5 10 50 100

50Hz

Initial junction temperature

Tj=125°C

10ms

1 cycle

Number of cycle

TF821S, TF841S, TF861S

Gate Characteristics

14

I

TSM

12

(V)

10

GF

8

6

4

Gate voltage v

2

See graph at the upper right

0

0123

(V)

2

GT

1

0

0

Gate trigger voltage V

P

G

M

=5W

Gate current i

j= –20°C

j=25°C

T

T

10 20 30

Gate trigger current IGT (mA)

(A)

GF

Tj= –40°C

I

T(AV)–PT(AV)

20

(W)

)

16

AV

(

T

12

8

4

Characteristics

50Hz Half-cycle sinewave

θ : Conduction angle

180°

θ

0°

θ=30°

90°

60°

Average on-state power P

0

0

51015

Average on-state current I

Pulse trigger temperature

v

gt

Characteristics

2.0

1.5

DC gate trigger

voltage at 25°C

( )( )

GT

V

1.0

w

t

Gate trigger voltage

at Ta and

vgt

0.5

0.5 1 10 100 1000

(Typical)

Tj =–40°C

–20°C

125°C

Pulse width t

25°C

75°C

(µs)

w

I

– Tc Ratings

T(AV)

150

DC

180°

120°

(A)

)

T(AV

125

(°C)

C

100

75

50

Case temperature T

25

θ=30°

0

0

Average on-state current I

90°

60°

51510

Pulse trigger temperature
Characteristics

vgt

t

w

30

10

DC gate trigger

current at 25°C

5

( )( )

GT

I

1

w

t

0.5

Gate trigger current

at Ta and

igt

0.2

0.5 1 10 100 1000

gt

i

Tj =–40°C

Pulse width t

180°

120°

(Typical)

–20°C

25°C

75°C

125°C

50Hz Half-cycle sinewave

θ : Conduction angle

180°

θ

DC

(A)

)

T(AV

(µs)

w

0°

I

temperature Characteristics

H

(Typical)

igt

t

w

100

(mA)

H

50

10

(VD=30V, RGK=1kΩ)

Holding current I

5

3

–40 0 50 75 10025 125

Junction temperature Tj (°C)

V

temperature Characteristics

GT

(Typical)

1.0

0.8

(V)

GT

0.6

0.4

0.2

Gate trigger voltage V

0

–40 0 50 75 10025 125

(V

Junction temperature Tj (°C)

=6V, RL=10Ω)

D

I

temperature Characteristics

GT

(Typical)

50

30

(mA)

GT

10

5

3

(V

D

Gate trigger current I

1

–40 0 50 75 10025 125

Junction temperature Tj (°C)

=6V, RL=10Ω)

Transient thermal resistance
Characteristics

10

(°C/W )

th

1

Transient thermal resistance r

0.1
11010210310410

(Junction to case)

t, Time (ms)

5

17