Sanken Electric Co TF561S-A, TF541S-A Datasheet
TO-220F 5A High sensitive Thyristor
TF541S-A,TF561S-A
■Features
●Repetitive peak off-state voltage: V
●Average on-state current: I
T(AV)
=5A
●High sensitive Gate trigger current: I
●Isolation voltage: V
=1500V(50Hz Sine wave, RMS)
ISO
=400, 600V
DRM
=0.2mA max
GT
■Absolute Maximum Ratings
Parameter Symbol
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
V
DRM
V
RRM
V
DSM
V
RSM
I
T(AV)
I
T(RMS)
I
TSM
I
FGM
V
FGM
V
RGM
P
P
G(AV)
Tj
Tstg
V
GM
ISO
TF541S-A TF561S-A
400
400
500
500
–40 to +125
–40 to +125
Ratings
5.0
7.8
80
2.0
10
5.0
5.0
0.5
1500
600
600
700
700
External Dimensions
(Unit: mm)
φ
3.3
0.2
±
8.4
±0.3
16.9
13.0min
±0.2
±0.2
±0.2
±0.2
4.0
0.8
3.9
2.54
10.0
a
b
2.2
(1) (2) (3)
±0.2
±0.2
±0.15
1.35
0.15
±
1.35
+0.2
–0.1
0.85
2.54
(1). Cathode(K)
(2). Anode (A)
(3). Gate (G)
0.45
Unit Conditions
V
V
V
Tj= –40 to +125°C, R
GK
V
A
50Hz Half-cycle sinewave, Continuous current, Tc=88°C
A
A
A
V
V
W
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f 50Hz, duty 10%
f 50Hz
f 50Hz, duty 10%
W
°C
°C
V
50Hz Sine wave, RMS, Terminal to Case, 1 min.
±0.2
4.2
C 0.5
2.8
+0.2
±0.2
–0.1
2.4
a. Part Number
b. Lot Number
Weight: Approx. 2.1g
=470Ω
■Electrical Characteristics
Parameter Symbol
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
20
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
I
H
dv/dt
tq
Rth
0.1
Ratings
typmin max
0.03
4.0
20
30
2.0
2.0
1.4
1.5
0.2
4.0
Unit Conditions
mA
mA
V
V
mA
V
mA
V/µS
µS
°C/W
°C,
Tj=125
T
=25
C
V
=6V, R
D
V
=1/2 ×V
D
R
GK
VD=
Tc=25
VD=V
°C,
ITM=10A
=10Ω, T
L
DRM
=1kΩ, Tj=25
1/2×V
DRM
, Tj=125
°C
Junction to case
DRM(VRRM
C
, Tj=125
°C
°C,
=25
RGK=
°C
°C,
), R
R
GK
1kΩ, C
GK
=1kΩ
=1kΩ
=
0.033µF
GK
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