Sanken Electric Co TF561M, TF541M, TF521M Datasheet
TO-220 5A Thyristor
TF521M, TF541M, TF561M
■Features
●Repetitive peak off-state voltage: V
●Average on-state current: I
●Gate trigger current: I
=15mA max
GT
T(AV)
=5A
=200, 400, 600V
DRM
■Absolute Maximum Ratings
Parameter Symbol
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
V
DRM
V
RRM
V
DSM
V
RSM
I
T(AV)
I
T(RMS)
I
TSM
I
FGM
V
FGM
V
RGM
P
P
G (AV)
Tstg
TF521M TF541M TF561M
200
200 600
300 700
300 700
GM
Tj
Ratings
400
400
500
500
5.0
7.8
80
2.0
10
5.0
5.0
0.5
–40 to +125
–40 to +125
600
External Dimensions
(Unit: mm)
Unit Conditions
V
V
V
V
A
A
A
A
V
V
W
W
°C
°C
10.4max
0.2
±
3.0
0.2
16.7max
±
a
8.8
b
12.0 min
4.0 max
±
0.1
2.5
(1) (2) (3)
Tj= –40 to +125°C, R
2.5
1.35
φ
±
0.1
0.1
±
3.75
±
0.15
(1). Cathode(K)
(2). Anode (A)
(3). Gate (G)
GK
50Hz Half-cycle sinewave, Continuous current, Tc=96°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f 50Hz, duty 10%
f 50Hz
f 50Hz, duty 10%
5.0max
2.1max
0.65
0.2
±
1.7
a. Part Number
b. Lot Number
Weight: Approx. 2.6g
=1kΩ
+0.2
–0.1
■Electrical Characteristics
Parameter Symbol
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
10
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
I
H
dv/dt
tq
Rth
0.1
Ratings
typmin max
3.0
4.0
50
30
2.0
2.0
1.4
1.5
15
3.0
Unit Conditions
mA
mA
V
V
mA
V
mA
V/µS
µS
°C/W
°C,
Tj=125
T
=25
C
V
=6V, R
D
V
=1/2×V
D
R
GK
VD=
Tc= 25
VD=V
°C,
ITM=10A
=10Ω, T
L
DRM
=1kΩ, Tj=25
1/2×V
DRM
, Tj=125
°C
Junction to case
DRM(VRRM
C
, Tj=125
°C
°C,
=25
RGK=
°C
°C,
), R
R
GK
1kΩ, C
GK
=1kΩ
=1kΩ
=
0.033µF
GK
v
–
i
Characteristics (max)
T
T
100
50
Tj =125°C
(A)
T
On-state current i
0.5
0.3
Tj =25°C
10
5
1
1.0 2.0 4.03.0
On-state voltage vT (V)
I
Ratings
TSM
100
(A)
80
TSM
60
40
20
Surge on-state current I
0
1 5 10 50 100
Initial junction temperature
Tj=125°C
Number of cycle
TF521M, TF541M, TF561M
Gate Characteristics
10ms
1 cycle
12
I
TSM
10
(V)
8
GF
6
4
Gate voltage v
2
See graph at the upper right
0
0123
(V)
2
GT
1
P
G
M
=5W
0
Gate trigger voltage V
Gate current i
j=25°C
T
0
10 20 30
Gate trigger current IGT (mA)
(A)
GF
j= –40°C
T
j= –20°C
T
I
T(AV)–PT(AV)
8
7
(W)
)
AV
(
6
T
5
4
3
2
1
Average on-state power P
0
0
Characteristics
50Hz Half-cycle sinewave
θ : Conduction angle
180°0°
θ
°
θ=30
2648
°
120
90°
60°
Average on-state current I
Pulse trigger temperature
v
gt
Characteristics
30
10
DC gate trigger
voltage at 25°C
( )( )
GT
V
1
w
t
Gate trigger voltage
at Ta and
0.1
vgt
0.05
11010210
(Typical)
TC=–40°C
–20°C
25°C
75°C
125°C
Pulse width tw (µs)
150
I
– Tc Ratings
T(AV)
°
°
DC
180
(A)
)
T(AV
vgt
50%
t
w
3
4
10
150
125
(°C)
C
100
75
50
Case temperature T
25
0
0
90°
60°
150°
θ=30°
120°
Average on-state current I
Pulse trigger temperature
gt
Characteristics
30
10
DC gate trigger
current at 25°C
( )( )
GT
I
1
w
t
Gate trigger current
at Ta and
0.1
igt
0.05
0.50.5 11010
(Typical)
i
TC=–40°C
–20°C
25°C
75°C
125°C
2
Pulse width tw (µs)
50Hz Half-cycle sinewave
θ: Conduction angle
θ180° 0°
6842
T(AV
10
DC
(A)
)
igt
50%
t
w
3
10
180°
I
temperature Characteristics
H
(Typical)
30
(mA)
20
H
10
(RGK=1kΩ)
Holding current I
4
0
–40 0 50 75 10025 125
Junction temperature Tj (°C)
V
temperature Characteristics
GT
(Typical)
1.0
0.8
(V)
GT
0.6
0.4
0.2
Gate trigger voltage V
0
–40 0 50 75 10025 125
(V
D
Junction temperature Tj (°C)
=6V, RL=10Ω)
I
temperature Characteristics
GT
(Typical)
12
10
(mA)
GT
8
6
4
2
Gate trigger current I
0
–40 0 75 10025 50 125
(V
Junction temperature Tj (°C)
=6V, RL=10Ω)
D
Transient thermal resistance
Characteristics
10
(°C/W )
th
1
Transient thermal resistance r
0.1
11010210
(Junction to case)
t, Time (ms)
3
4
10
11
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