Sanken Electric Co TF561S, TF541S, TF521S Datasheet

TO-220F 5A Thyristor

TF521S, TF541S, TF561S

■Features

●Repetitive peak off-state voltage: V

●Average on-state current: I

●Gate trigger current: I

●Isolation voltage: V

=15mA max

GT

=1500V(50Hz Sine wave, RMS)

ISO

T(AV)

=5A

●UL approved type available

=200, 400, 600V

DRM

■Absolute Maximum Ratings

Parameter Symbol

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

RMS on-state current

Surge on-state current

Peak forward gate current

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

Isolation voltage

V

DRM

V

RRM

V

DSM

V

RSM

I

T(AV)

I

T(RMS)

I

TSM

I

FGM

V

FGM

V

RGM

P

P

G(AV)

Tj

Tstg

V

TF521S TF541S TF561S

200

200 600

300 700

300 700

GM

ISO

Ratings

400

400

500

500

5.0

7.8

80

2.0

10

5.0

5.0

0.5

–40 to +125

–40 to +125

1500

600

External Dimensions

(Unit: mm)

φ

3.3

±0.2

0.3

8.4

±

16.9

13.0min

±0.2

±0.2

0.2

±

±0.2

4.0

0.8

3.9

2.54

10.0

a
b

2.2

(1) (2) (3)

±0.2

±0.2

±0.15

1.35

±0.15

1.35
+0.2

–0.1

0.85

2.54

(1). Cathode(K)
(2). Anode (A)
(3). Gate (G)

0.45

Unit Conditions

V

V

V

Tj= –40 to +125°C, R

GK

V

A

50Hz Half-cycle sinewave, Continuous current, Tc=87°C

A

A

A

V

V

W

50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C

f 50Hz, duty 10%

f 50Hz

f 50Hz, duty 10%

W

°C
°C

V

50Hz Sine wave, RMS, Terminal to Case, 1 min.

±0.2

4.2
C 0.5

2.8

+0.2

–0.1

0.2

±

2.4

a. Part Number
b. Lot Number

Weight: Approx. 2.1g

=1kΩ

■Electrical Characteristics

Parameter Symbol

Off-state current

Reverse current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

Critical rate-of-rise of off-state voltage

Turn-off time

Thermal resistance

12

I

DRM

I

RRM

V

TM

V

GT

I

GT

V

GD

I

H

dv/dt

tq

Rth

0.1

Ratings

typmin max

3.0

4.0

50

30

2.0

2.0

1.4

1.5

15

4.0

Unit Conditions

mA

mA

V

V

mA

V

mA

V/µS

µS

°C/W

°C,

Tj=125

T

=25

C

V

=6V, R

D

V

=1/2 ×V

D

R

GK

VD=

Tc=25

VD=V

°C,

ITM=10A

=10Ω, T

L

DRM

=1kΩ, Tj=25

1/2×V

DRM

, Tj=125

°C

Junction to case

DRM(VRRM

C

, Tj=125

°C

°C,

=25

RGK=

°C

°C,

), R

R

GK

1kΩ, C

GK

=1kΩ

=1kΩ

=

0.033µF

GK

TF521S, TF541S, TF561S

v

–

i

Characteristics (max)

T

T

100

50

(A)

T

Tj =125°C

10

5

Tj = 25°C

On-state current i

1

0.5

0.6

1.0 2.0 3.0 3.6

On-state voltage vT (V)

I

T(AV)–PT(AV)

12

(W)

10

)
AV

(
T

8

6

4

2

Average on-state power P

0

0

Characteristics

50Hz Half-cycle sinewave

θ : Conduction angle

180°

0°

θ

°

θ=30

246810

Average on-state current I

I

Ratings

TSM

100

(A)

80

TSM

60

40

20

Surge on-state current I

0

1 5 10 50 100

50Hz

Initial junction temperature
Tj=125°C

10ms

1 cycle

I

TSM

Number of cycle

I

– Tc Ratings

T(AV)

150

DC

180°

°

120

90°

60°

(A)

)

T(AV

125

(°C)

C

100

75

50

Case temperature T

25

0

0

60°

θ=30°

246810

Average on-state current I

90°

120°

180°

50Hz Half-cycle sinewave

θ : Conduction angle

θ180° 0°

DC

(A)

)

T(AV

Gate Characteristics

14

12

10

(V)

GF

8

6

4

Gate voltage v

2

See graph at the upper right

0

0123

(V)

2

GT

1

0

0

Gate trigger voltage V

Gate trigger current IGT (mA)

P

GM

=5W

Gate current i

j=25°C

T

10 20 30

(A)

GF

Tj= –40°C

j= –20°C

T

Pulse trigger temperature

v

gt

Characteristics

2.0

1.5

DC gate trigger

voltage at 25°C

( )( )

GT

V

1.0

w

t

Gate trigger voltage

at Ta and

vgt

0.5

0.5 1 10 100 1000

V

temperature Characteristics

GT

(Typical)

1.2

1.0

(V)

GT

0.8

0.6

0.4

Gate trigger voltage V

0.2

0

–40 0 50 1007525 125

Junction temperature Tj (°C)

(Typical)

Tj =–40°C

–20°C

25°C

75°C

125°C

Pulse width tw (µs)

=6V, RL=10Ω)

(V

D

Pulse trigger temperature

gt

Characteristics

vgt

t

w

30

10

DC gate trigger

current at 25°C

5

( )( )

GT

I

1

w

t

0.5

Gate trigger current

at Ta and

igt

0.2

0.5 1 10 100 1000

I

temperature Characteristics

GT

(Typical)

50

30

(mA)

GT

10

5

3

(Typical)

i

Tj =–40°C

–20°C

25°C

75°C

125°C

Pulse width tw (µs)

(V

=6V, RL=10Ω)

D

igt

t

w

I

temperature Characteristics

H

(Typical)

100

50

(mA)

H

10

(VD=30V, RGK=1kΩ)

Holding current I

5

3

–40 0 50 75 10025 125

Junction temperature Tj (°C)

Transient thermal resistance
Characteristics

10

(°C/W )

th

1

(Junction to case)

Gate trigger current I

Transient thermal resistance r

1

–40 0 50 75 10025 125

Junction temperature Tj (°C)

0.1
11010

2

t, Time (ms)

10310410

5

13