Sanken Electric Co TF361M-A, TF341M-A, TF321M-A Datasheet
TO-220 3A High sensitive Thyristor
TF321M-A, TF341M-A, TF361M-A
■Features
●Repetitive peak off-state voltage: V
●Average on-state current: I
T(AV)
=3A
●High sensitive Gate trigger Current: I
=200, 400, 600V
DRM
=0.1mA max
GT
■Absolute Maximum Ratings
Parameter Symbol
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
V
V
V
V
I
T(AV)
I
T(RMS)
I
I
V
V
P
P
Tstg
TF321M-A TF341M-A TF361M-A
DRM
RRM
DSM
RSM
TSM
FGM
FGM
RGM
GM
G (AV)
200
200 600
300 700
300 700
Tj
Ratings
400
400
500
500
3.0
4.7
60
2.0
10
5.0
5.0
0.5
–40 to +110
–40 to +125
600
External Dimensions
(Unit: mm)
Unit Conditions
V
V
V
V
A
A
A
A
V
V
W
W
°C
°C
10.4max
0.2
±
3.0
0.2
16.7max
±
a
8.8
b
12.0 min
4.0 max
±
0.1
2.5
(1) (2) (3)
Tj= –40 to +125°C, R
2.5
1.35
φ
±
0.1
±
0.1
3.75
±
0.15
(1). Cathode(K)
(2). Anode (A)
(3). Gate (G)
GK
50Hz Half-cycle sinewave, Continuous current, Tc=87°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f 50Hz, duty 10%
f 50Hz
f 50Hz, duty 10%
5.0max
2.1max
0.65
±
0.2
1.7
a. Part Number
b. Lot Number
Weight: Approx. 2.6g
=1kΩ
+0.2
–0.1
■Electrical Characteristics
Parameter Symbol
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
18
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
I
H
dv/dt
tq
Rth
0.1
Ratings
typmin max
1.0
20
30
1.0
1.0
1.4
0.1
3.0
Unit Conditions
mA
mA
V
1
V
mA
V
mA
V/µS
µS
°C/W
°C,
Tj=125
T
=25
C
V
=6V, R
D
V
=1/2×V
D
R
GK
VD=
Tc= 25
VD=V
°C,
ITM=5A
=10Ω, T
L
DRM
=1kΩ, Tj=25
1/2×V
DRM
, Tj=125
°C
Junction to case
DRM(VRRM
C
, Tj=125
°C
°C,
=25
°C
°C,
RGK=
), R
R
GK
1kΩ, C
GK
=1kΩ
=1kΩ
=
0.033µF
GK
v
–
i
Characteristics (max)
T
T
100
50
(A)
T
On-state current i
°C
10
Tj=125
5
Tj=25°C
1
0.5
0.3
1.0 2.0 4.03.0
On-state voltage vT (V)
I
Ratings
TSM
(A)
TSM
80
60
40
20
Initial junction temperature
Tj=125°C
1 cycle
Surge on-state current I
0
1 5 10 50 100
Number of cycle
TF321M-A, TF341M-A, TF361M-A
Gate Characteristics
12
I
10ms
TSM
10
(V)
8
GF
6
4
P
GM
=5W
Gate voltage v
2
0
01 32
Gate current i
(A)
GF
I
T(AV)–PT(AV)
7
6
(W)
)
AV
(
T
5
4
3
2
1
Average on-state power P
0
0
Characteristics
50Hz Half-cycle sinewave
θ : Conduction angle
180°0°
θ
θ=30°
13425
120
90°
60°
Average on-state current I
Pulse trigger temperature
v
gt
Characteristics
50
DC gate trigger
voltage at 25°C
10
( )( )
GT
V
5
w
t
1
Gate trigger voltage
at Ta and
0.5
vgt
11010210
(Typical)
Pulse width t
°
w
150
(µs)
180
°
T(AV
I
– Tc Ratings
T(AV)
DC
°
(A)
)
150
125
(°C)
C
100
75
50
Case temperature T
25
0
θ=30°
0
Average on-state current I
90°
60°
150°
120°
50Hz Half-cycle sinewave
θ : Conduction angle
180°0°
θ
DC
180°
(A)
)
T(AV
54312
Pulse trigger temperature
gt
Characteristics
vgt
50%
t
w
3
50
10
DC gate trigger
current at 25°C
( )( )
GT
I
5
w
t
1
Gate trigger current
at Ta and
igt
0.5
11010
(Typical)
i
2
Pulse width tw (µs)
igt
50%
t
w
3
10
V
temperature Characteristics
GT
(Typical)
1.0
0.8
(V)
GT
0.6
0.4
0.2
Gate trigger voltage V
0
–40 0 75 12510025 50
Junction temperature Tj (°C)
(VD=6V, RL=10Ω)
I
temperature Characteristics
GT
(Typical)
24
20
(µA)
GT
10
Gate trigger current I
0
–40 0 75 12510025 50
Junction temperature Tj (°C)
=6V, RL=10Ω)
(V
D
Transient thermal resistance
Characteristics
10
(°C/W )
th
1
Transient thermal resistance r
0.1
11010210
(Junction to case)
t, Time (ms)
3
4
10
19
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