Sanken Electric Co STA509A Datasheet
MOS FET Array STA509A
Absolute Maximum Ratings
(Ta=25ºC) (Ta=25ºC)
Symbol Ratings Unit
V
DSS
V
GSS
I
D
I
*
D (pulse)
P
T
2
E
*
AS
T
ch
Tstg
*
1 P
100µs, duty 1%
W
*
2 V
12V, L
=
DD
—
■
I
V
D
6
5
4
3
(A)
D
I
2
1
0
024 101268 14
52±5
±20
4 (Ta
20 (Tc
±3
±6
=
=
25ºC)
25ºC)
1
40
150
–55 to +150
10mH, unclamped, R
=
Characteristics
DS
V
= 5V
GS
= 10V
V
GS
V
V
A
A
W
W
mJ
ºC
ºC
=
G
VDS (V)
Electrical Characteristics
Symbol Test Conditions
10Ω
V
V
V
(BR) DSSID
I
GSS
I
DSS
V
TH
R
e
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
on
d
(
)
r
t
off
td
(
)
tf
V
SD
= 4V
GS
= 3V
GS
=
V
DS
V
DS
V
DS
V
GS
V
GS
R
G1
I
SD
■
(A)
D
I
Ratings
min typ max
1mA, V
V
=
10V, I
=
=
=
=
V
f
V
50Ω, R
=
=
I
D
0.1
0.01
0V
=
GS
20V
= ±
GS
40V, V
=
GS
250µA2.51.0
=
D
10V, I
1.0A
=
D
10V, I
1.0A
=
D
4V, I
1.0A
=
D
10V
=
DS
1.0MHz
=
0V
V
=
GS
I
1A
=
D
12V
DD
12Ω
=
R
L
V
5V
=
GS
=
G2
6A, V
=
GS
—
Characteristics
V
GS
20
10
1
0123456
0V
10Ω
0V
V
= 10V
DS
47 52 57
±1.0
100
1.0
0.2
0.25
0.25
0.3
200
120
20
2.0
7.4
3.3
4.2
1.0 1.5
T
= –55ºC
a
25ºC
75ºC
150ºC
VGS (V)
Unit
V
µA
µA
V
S
Ω
Ω
pF
pF
pF
µs
µs
µs
µs
V
External Dimensions STA
±0.2
25.25
±0.15
0.5
±0.05
567 10
DGD S89GD
ID (A)
b
±0.3
0
±0.2
±0.2
■
±0.2
2.3
11.3
±0.5
3.5
R
DS
0.8
0.6
1.0
(on)
9.0
±0.25
±0.5
C1.5
1324
SGDG
—
I
D
V
GS
a
9•2.54=22.86
Characteristics
= 4V
(Ω)
0.4
DS (on)
R
0.2
0
0123 645
(2.54)
±0.2
±0.15
1.2
0.5
a) Type No.
b) Lot No.
(Unit: mm)
T
= 150ºC
a
75ºC
25ºC
–55ºC
±0.3
0
±0.2
4.0
—
■
R
(on)
DS
0.5
0.4
0.3
(Ω)
DS (on)
0.2
R
0.1
0
–50 0 50 100 150
Characteristics
T
C
I
= 1A
D
Tc (ºC)
■
Re (yfs) — I
10
V
= 4V
GS
typ.
5
Characteristics
D
V
= 10V
DS
(S)
(yfs)
V
= 10V
GS
typ.
e
1
R
0.5
0.2
0.05 0.1 0.5 1 6
T
a
= –55ºC
25ºC
150ºC
ID (A)
Safe Operating Area (single pulse)
■
(A)
D
I
0.5
10
I
max
D
(pulse)
5
LIMITED
(on)
DS
R
1
10ms
(Tc
= 25ºC)
100µs
1ms
—
■
I
DR
(A)
DR
I
Characteristics
V
SD
10
8
T
6
4
2
0
00.40.2 0.6 0.8 1.41.21.0
= 150ºC
a
75ºC
25ºC
–55ºC
VSD (V)
Equivalent Circuit Diagram
3
2
1
5
4
7
6
8
9
10
80
0.1
0.5 1 5 10 50
VDS (V)
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