Sanken Electric Co STA508A Datasheet

MOS FET Array STA508A

Absolute Maximum Ratings

(Ta=25ºC) (Ta=25ºC)

Symbol Ratings Unit

*
*

1 P
2 V

V

DSS

V

GSS

I

D

I

D (pulse)

P

T

E

AS

T

ch

Tstg

W

DD

■

I

D

(A)

D

I

*

=

1

*

2

100µs, duty 1%

12V, L

—

V

16

12

8

4

120
±20
±6
±10

4 (Ta

25ºC)

=

20 (Tc

25ºC)

=
80
150

–55 to +150

10mH, unclamped, R

=

Characteristics

DS

V

GS

= 10V

W
W

mJ

ºC
ºC

=

G

V

GS

Electrical Characteristics

V
V
A
A

50Ω

= 4.5V

Symbol Test Conditions

V

(BR) DSSID

I

GSS

I

DSS

V

TH

R

e

(

yfs

R

DS (ON

V

DS

V

DS

V

)

DS

V

GS

)

V

GS

Ciss
Coss
Crss
t

on)

d

(

r

t

off)

td

(
tf
V

SD

I

SD

■

100µA, V

=

V

GS

120V, V

=

10V, I

=

10V, I

=

10V, I

=

4V, I

=

V

DS

f

1.0MHz

=
V

GS

I

D

V

DD

R

V

GS

R

G

6A, V

=

—

I

D

10

8

6

(A)

D

I

4

2

=

GS

20V

= ±

=

GS

250µA 2.01.0

=

D

4.0A

=

D

4.0A

=

D

4.0A

=

D

10V

=

0V

=

4A

=

12V

3Ω

=

L

5V

=

50Ω

=

=

GS

Characteristics

V

GS

T

0V

0V

0V

= –55ºC

a

V

DS

25ºC
75ºC

150ºC

= 10V

Ratings
min typ max
120

±5

100

5.0

0.15

0.2

0.2

0.25
400
130
30
100
300
250
200

1.0 1.5

Unit

V

µA
µA

V
S

Ω
Ω

pF
pF
pF
ns
ns
ns
ns

V

External Dimensions

±0.2

±0.2

■

±0.2

2.3

11.3

±0.5

3.5

R

DS

0.30

0.25

0.20

(Ω)

0.15

DS (on)

R

0.10

0.05

9.0

1.0

(on)

±0.25

C1.5

1324
SGDG

—

±0.5

I

D

a

9• 2.54=22.86

STA4 (LF412)

±0.2

25.25

b

±0.15

0.5

±0.3

0

±0.05

567 10
DGD S89GD

Characteristics

V

= 4V

GS

V

= 10V

GS

(2.54)

±0.2

±0.15

1.2

0.5

a) Type No.
b) Lot No.

(Unit: mm)

±0.3

0

±0.2

4.0

0

012 534 6

V

(V)

DS

Characteristics

R

0.45

0.40

0.30

—

(on)

DS

T

C

I

= 4A

D

■

(Ω)

0.20

DS (on)

R

0.10

0

–50 0 50 100 150

Tc (ºC)

—

■

Capacitance

1000

500

(pF)

100

50

Capacitance

V

DS

Characteristics

V

GS

f

= 1MHz

V

V

GS

= 0V

GS

= 4V

= 10V

Ciss

Coss

0

0 1.0 2.0 3.0 4.0

V

(V)

GS

—

■

R

e (yfs)

50

10

5

(S)

(yfs)

e
R

1

0.5

0.1

0.05 0.1 0.5 1 5 10

afe Operating Area (single pulse)

S

■

20

10

5

(A)

D

1

I

0.5

I

D

pulse

(

I

max

D

(DC)

R

DS

(on)

Characteristics

I

D

I

D

max

)

LIMITED

100ms

T

(A)

10m

= –55ºC

a

150ºC

(Ta

1ms

s

25ºC
75ºC

100µs

= 25ºC)

0

024 8610

I

(A)

D

—

■

(A)
I

I

DR

DR

Characteristics

V

SD

6

V

= 0V

GS

T

a

= 150ºC

75ºC
25ºC

–55ºC

V

(V)

SD

5

4

3

2

1

0

00.40.2 0.6 0.8 1.21.0

Equivalent Circuit Diagram

3

2

1

5

4

7

6

9

8

10

Crss

10

01020304050

V

(V)

DS

0.1
1 5 10 50 100 200

V

(V)

DS

79