Sanken Electric Co STA457C Datasheet
0
VBE (V)
12
0
2
3
1
4
I
C
(A)
(VCE=4V)
T
a
=125°C
75°C
25°C
–30°C
–4
–3
–2
–1
0
0–1–2–3
IC (A)
VBE (V)
(V
CE=–4V)
T
a
=125°C
75°C
25°C
–30°C
PNP + NPN Darlington
Ratings
H-bridge
External dimensions
(Ta=25°C)
STA457C
Absolute maximum ratings
Symbol Unit
NPN PNP
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6–6V
IC4–4A
ICP 8 (PW≤10ms, Du≤50%) –8 (PW≤10ms, Du≤50%) A
PT
4 (Ta=25°C)
20 (Tc=25°C)
W
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
2
R
3
R
4
1
4
R
1
R
2
5
7
6
8
3
9
10
D
• • •
STA400
R1: 3kΩ typ R2: 200Ω typ R3: 2kΩ typ R4: 150Ω typ
Characteristic curves
6
4
(A)
C
I
2
0
02
20000
10000
5000
1000
FE
h
500
100
50
30
0.03 0.10.05
20000
10000
5000
144
FE
h
1000
500
100
=125°C
a
T
0.05 0.1 0.5 1 4
NPN PNP NPN
=4.0mA
B
I
2.0mA
1.2mA
0.8mA
0.6mA
0.5mA
0.4mA
46
V
CE
(V)
FE-IC Characteristics (Typical)
NPN PNP PNP
IC (A)
h
(VCE=4V)
typ
40.5 1
–6
–5
–4
–3
(A)
C
I
–2
–1
0
0 –1–2–3–4–5–6
10000
5000
1000
500
FE
h
100
50
20
–0.02 –0.05 –0.1
=–2.3mA
B
I
–1.8mA
–1.5mA
–1.2mA
–1.0mA
–0.8mA
VCE (V)
–0.5 –1 –4
IC (A)
(VCE=–4V)
typ
hFE-IC Temperature Characteristics (Typical)
IC-VCE Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
NPN PNP
25°C
–30°C
IC (A)
(VCE=4V)
10000
5000
1000
500
hFE
100
50
20
–0.02
=125°C
a
T
–0.1 –1
–0.05 –0.5 –4
25°C
–30°C
IC (A)
(VCE=4V)
STA457C
–40 0
50 100 150
20
16
12
8.0
4.0
0
P
T
(W)
Ta (°C)
24
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
With Infinite Heatsink
100×100×2
50×50×2
25×50×2
Without Heatsink
Electrical characteristics
NPN PNP
Symbol Specification
min typ max min typ max
ICBO 10
Unit Conditions
µ
AVCB=60V –10
IEBO 10 mA VEB=6V –10 mA VEB=–6V
VCEO 60 V IC=10mA –60 V IC=–10mA
hFE 2000 VCE=4V, IC=2A 2000 VCE=–4V, IC=–2A
VCE(sat) 1.5 V
VBE(sat) 2.0 V –2.0 V
IC=2A, IB=4mA
VFEC 1.6 V IFEC=2A –1.6 V IFEC=–2A
Specification
Unit Conditions
µ
–1.5 V
AVCB=–60V
IC=–2A, IB=–4mA
(Ta=25°C)
Characteristic curves
VCE(sat)-IB Characteristics (Typical)
IC=4A
3A
10 1005051
(mA)
CE(sat)-IC Temperature Characteristics (Typical)
V
(IC / IB=1000)
IC (A)
1ms
10ms
3
2
(sat) (V)
CE
V
1
0
0.50.2
2.0
1.0
(sat) (V)
CE
V
0
0.1 0.5 1
–10
–5
125°C
75°C
25°C
NPN PNP
2A
1A
I
B
NPN PNP
Ta=–30°C
NPN PNP
–3
–2
(sat) (V)
CE
V
–1
0
–0.5 –0.1 –5 –10 –50
–2
–1
(sat) (V)
CE
V
4
0
–0.5
Safe Operating Area (SOA)
–10
–5
IC=–1A
–1
T
=–30°C
a
IB (mA)
25°C
IC (A)
10ms
125°C
1ms
IC=–4A
IC=–2A
(IC / IB=1000)
θ
j-a-PW Characteristics
20
10
5
(°C / W)
j–a
θ
1.0
0.5
1
5 10005001005010
PW (mS)
PT-Ta Characteristics
–4
–1
IC (A)
–0.5
Single Pulse
Without Heatsink
T
a
–0.1
–3
=25°C
–5
–10 –50
VCE (V)
–100
(A)
C
I
–1
–0.5
–0.1
–3
Single Pulse
Without Heatsink
T
a
=25°C
–5
–10 –50
VCE (V)
–100
145
Loading...