Power Transistor Array STA415A
Absolute Maximum Ratings
(Ta=25ºC) (Ta=25ºC)
Symbol Ratings Unit
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
Tj
Tstg
*
P
1ms, Duty 25%
W
I
— V
■
C
(A)
C
I
3
2
1
35±5
36±5
6
*
)
2 (pulse 3
30
4 (Ta
=
25ºC)
18 (Tc
=
25ºC)
150
–55 to +150
Characteristics (typ.)
CE
A
A
12m
30m
V
V
V
A
mA
W
W
ºC
ºC
Electrical Characteristics
Symbol Test Conditions Ratings Unit
I
CBO
I
EBO
V
CEO
h
FE
V
CE (sat)
V
FEC
R
B
R
BE
Es/b mJL
V
=
V
CE
=
I
C
I
C
30V
CB
V
=
6V
EB
I
=
25mA
C
=
4V, IC =
0.7A 400min
0.5A, IB =
=
5mA
1A, IB =
5mA
I
=
2A 2.5max
FEC
10max
2.7max
31 to 41
800±120
=
10mH, single pulse 50min
Typical Switching Characteristics
V
R
I
V
V
I
CC
L
C
BB1
(V)
(Ω)
(A)
12
12
1
V
■
CE (sat)
8mA
5mA
3mA
2mA
I
=
1mA
B
0.5
(V)
0.25
CE(sat)
V
BB2
(V)
(V)
10
–5
— IB Temperature Characteristics
B1
(mA)
5
I
B2
(mA)
0
T
=
125ºC
a
75ºC
25ºC
–40ºC
0.2max
0.5max
2.0±0.4
t
on
(µs)
1.0
External Dimensions
µA
25.25
±0.2
STA4 (LF412)
mA
±0.15
0.5
±0.05
567 10
CBC E89BC
IC/I
=
100
B
T
=
125ºC
a
b
±0.3
0
75ºC
25ºC
–40ºC
(2.54)
±0.2
±0.15
1.2
0.5
a) Type No.
b) Lot No.
(Unit: mm)
±0.3
0
±0.2±
4.0
V
V
V
V
Ω
kΩ
t
t
stg
f
(µs)
(µs)
8.5
2.5
=
0.5A)
(I
C
■
±0.2
11.3
±0.5
3.5
V
±0.2
±0.2
2.3
CE (sat)
a
9.0
±0.25
1.0
9 • 2.54=22.86
±0.5
C1.5
1324
EBCB
— IC Temperature Characteristics
3
2
(V)
CE(sat)
V
1
0
01 45263
VCE (V)
h
— IC Temperature Characteristics
■
FE
3000
1000
500
FE
h
100
50
0.01 0.1 40.5 1
IC (A)
Safe Operating Area (single pulse)
■
5
1
(A)
C
I
0.5
Without heatsink
natural air cooling
T
=
125ºC
a
75ºC
25ºC
–40ºC
(per element)
10ms
(V
1ms
0
1 10 100 400
IB (mA)
t
■
=
4V)
CE
on•tstg•tf
(µS)
f
t
stg•
t
on•
t
— IC Characteristics (typ.)
50
t
10
5
t
f
1
0.5
0.1
0 0.5 1.0 1.5 2.0
stg
t
on
V
CC
I
=
B
–I
=
B
12V
5mA
=
0A
Ic (A)
P
— Ta Derating
■
T
20
With infinite heatsink
10
(W)
T
P
Without heatsink
0
0 0.5 1 5
IC (A)
j-a
— t Characteristics
■
20
10
5
(ºC/W)
j-a
1
1 10 100 1000
t (ms)
Equivalent Circuit Diagram
3
5
7
R
4
6
B
2
R
BE
1
8
Single pulse
9
10
64
0.1
1 5 10 50
VCE (V)
0
0 50 150100
Ta (ºC)