20000
10000
5000
1000
500
100
0.05 0.1 0.5 1 4
T
a
=125°C
25°C
–30°C
h
FE
IC (A)
(V
CE
=4V)
10
5
1
0.5
0.1
3 5 10 50
I
C
(A)
VCE (V)
0.05
100
10ms
1ms
Single Pulse
Without Heatsink
Ta=25°C
NPN Darlington
01
V
BE
(V)
2
3
4
2
1
0
I
C
(A)
(VCE=–4V)
T
a
=125°C
75°C
25°C
–30°C
STA401A
Absolute maximum ratings
With built-in avalanche diode
(Ta=25°C)
Electrical characteristics
Symbol Ratings Unit
VCBO 60±10 V
VCEO 60±10 V
VEBO 6V
IC 4A
ICP 8 (PW≤10ms, Du≤50%) A
PT W
4 (Ta=25°C)
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
3
2
R
1
R
2
1
5
4
7
6
9
8
10
External dimensions
D
• • •
STA400
(Ta=25°C)
Symbol Unit Conditions
ICBO 100
Specification
min typ max
µ
AVCB=50V
IEBO 10 mA VEB=6V
VCEO 50 60 70 V IC=10mA
hFE 1000 VCE=4V, IC=3A
VCE(sat) 2.0 V IC=3A, IB=10mA
ton 1.0
tstg 4.0
tf 1.5
µ
sVCC 30V,
µ
sIC=3A,
µ
sIB1=–IB2=10mA
R1: 3kΩ typ R2: 150Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
5
=2.0mA
B
I
T
=–30°C
a
1.0mA
0.8mA
0.6mA
0.5mA
0.4mA
0.3mA
(IC / IB=1000)
4
3
(A)
C
I
2
1
0
01 234
CE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
V
2
1
(sat) (V)
CE
V
VCE (V)
25°C
125°C
20000
10000
5000
1000
FE
h
500
100
50
0.05 0.1 1 4
3
2
(sat) (V)
CE
V
1
IC (A)
I
C
I
C
=2A
I
C
=1A
(VCE=4V)
typ
0.5
I
C
=4A
=3A
0
0.1
20
10
5
(°C / W)
j–a
θ
1.0
0.5
0
0.5 1 4
IC (A)
θ
j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
1 5 10 50 100 5001000
PW (mS)
0.2 0.5 1 5 10 50 100
24
With Infinite Heatsink
20
16
×
100
(W)
12
T
P
50×50×2
8.0
×50×
25
Without Heatsink
4.0
0
–40 0
100×2
IB (mA)
2
50 100 150
Ta (°C)
With Silicone Grease
Natural Cooling
Heatsink: Aluminum
in mm
127