
Power Transistor Array STA335A
Absolute Maximum Ratings
(Ta=25ºC) (Ta=25ºC)
Symbol Ratings Unit
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
Tj
Tstg
I
— V
■
C
3
2
(A)
C
I
1
0
0123
35±5
35±5
6
3
1
2.5 (Ta=25ºC)
12 (Tc=25ºC)
150
–55 to +150
Characteristics (typ.)
CE
A
0m
1
8mA
15mA
V
CE
V
V
V
A
A
W
W
ºC
ºC
6mA
IB=1mA
(V)
Electrical Characteristics
Symbol Test Conditions Ratings Unit
I
CBO
I
EBO
V
CEO
h
FE
V
CE (sat)
Es/b mJL
V
=
30V
CB
V
=
6V
EB
I
=
25mA
C
V
=
4V, IC =
CE
=
C
=
10mH, single pulse 150min
0.5A 500min
1A, IB =
5mA 0.5max
10max
10max
35±5
Typical Switching Characteristics
R
I
V
V
I
I
(mA)
= 125ºC
a
IB (A)
B2
5
75ºC
25ºC
–55ºC
t
(µs)
1.3
on
5mA
4mA
3mA
2mA
V
CC
L
C
BB1
BB2
(V)
(Ω)
(A)
(V)
12
1
12
10
V
■
CE (sat)
1
(V)
0.5
CE (sat)
V
0
0.002 0.01 0.05 0.1 0.4
B1
(V)
(mA)
–5
5
— IB Temperature Characteristics
T
External Dimensions
µA
µA
V
VI
t
t
stg
f
(µs)
(µs)
4.7
1.2
= 1A)
(I
C
±0.2
±0.2
±0.2
a
9.0
2.3
11.3
±0.5
4.7
7•2.54=17.78
±0.5
C1.5
1324
CBE
I
— V
■
(A)
C
I
Temperature Characteristics (typ.)
C
BE
4
3
2
1
0
V
0 0.5 1.0 1.5
20.2
0.5
±0.25
1.0
EBC
= 4V
CE
STA3 (LF400A)
±0.2
b
±0.15
(2.54)
±0.25
5678
a) Type No.
b) Lot No.
(Unit: mm)
±0.15
0.5
T
a
±0.2
1.2
= –55ºC
25ºC
75ºC
125ºC
±0.2
4.0
VBE (V)
h
— IC Temperature Characteristics (typ.)
■
FE
5000
1000
FE
h
500
100
0.01 0.05 0.1 30.5 1
T
a
IC (A)
Safe Operating Area (single pulse)
■
10
5
(a)
C
I
1
0.5
0.2
2 5 10 50
DC (Tc=25ºC)
VCE (V)
= 125ºC
75ºC
25ºC
–55ºC
(per element)
10ms
100m
(V
1ms
t
on•tstg•tf
= 4V)
CE
■
(µS)
f
t
•
stg
t
•
on
t
■
— IC Characteristics (typ.)
20
10
5
1
0.5
0.3
t
stg
t
f
t
on
0.10.05 0.5 1 5
Ic (A)
P
— Ta Derating
T
15
With infinite heatsink (All circuits operate)
10
(W)
T
P
5
W
ithout heatsink (All circuits operate)
0
0 50 150100
j-a
— t Characteristics
■
V
= 12V
CE
I
= –I
= 5mA
B1
B2
20
10
5
1
j-a (ºC/W)
0.5
0.1
0.1 1 10 100 1000 5000
Single pulse
t (ms)
Equivalent Circuit Diagram
2
3
6
4
7
5
Ta (ºC)
63