Power Transistor Array STA315A
Absolute Maximum Ratings
(Ta=25ºC) (Ta=25ºC)
Symbol Ratings Unit
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
Tj
Tstg
*
P
1ms, Duty 25%
W
I
— V
■
C
(A)
C
I
3
2
1
35±5
36±5
6
*
)
2 (pulse 3
30
3 (Ta=25ºC)
13.5 (Tc=25ºC)
150
–55 to +150
Characteristics (typ.)
CE
A
A
12m
30m
V
V
V
A
mA
W
W
ºC
ºC
Electrical Characteristics
Symbol Test Conditions Ratings
I
CBO
I
EBO
V
CEO
h
FE
V
CE (sat)
V
FEC
R
B
R
BE
Es/b
V
=
30V
CB
V
=
6V
EB
IC =
25mA
V
=
4V, IC =
CE
IC =
=
I
C
=
10mH, single pulse 50min
0.7A 400min
0.5A, IB =
5mA
1A, IB =
5mA
I
=
2A 2.5max
FEC
Typical Switching Characteristics
V
R
I
V
CC
L
(V)
12
8mA
5mA
3mA
2mA
I
=
1mA
B
C
(Ω)
(A)
12
1
V
■
(V)
0.25
CE (sat)
V
V
BB1
BB2
(V)
(V)
10
–5
— IB Temperature Characteristics
CE (sat)
0.5
I
(mA)
External Dimensions
Unit
10max
2.7max
31 to 41
0.2max
0.5max
800±120
2.0±0.4
I
B1
5
t
B2
on
(mA)
(µs)
0
1.0
T
=
125ºC
a
75ºC
25ºC
–40ºC
µA
mA
±0.2
■
±0.2
±0.2
a
9.0
2.3
11.3
±0.5
4.7
7•2.54=17.78
±0.5
C1.5
1324
EBCB
V
— IC Temperature Characteristics
CE (sat)
3
2
V
V
V
V
Ω
kΩ
mJL
t
t
stg
f
(µs)
(µs)
2.5
8.5
=
0.5A)
(I
C
(V)
CE (sat)
V
1
20.2
0.5
±0.25
1.0
IC/I
B
T
a
STA3 (LF400A)
±0.2
b
±0.15
(2.54)
±0.25
5678
CBCE
a) Type No.
b) Lot No.
(Unit: mm)
=
100
=
125ºC
75ºC
25ºC
–40ºC
±0.2
±0.2
±0.15
4.0
1.2
0.5
62
0
01 45263
VCE (V)
h
— IC Temperature Characteristics
■
FE
3000
1000
500
FE
h
100
50
0.01 0.1 40.5 1
IC (A)
Safe Operating Area (single pulse)
■
5
1
(A)
C
I
0.5
Without heatsink
natural air cooling
0.1
1 5 10 50
VCE (V)
T
=
125ºC
a
75ºC
25ºC
–40ºC
(per element)
10ms
(V
1ms
0
1 10 100 400
IB (mA)
t
4V)
■
(µS)
f
t
•
stg
t
•
on
t
0.5
0.1
=
CE
on•tstg•tf
— IC Characteristics (typ.)
50
t
10
5
t
f
1
0 0.5 1.0 1.5 2.0
stg
t
on
V
=
CC
I
=
B
–I
B
12V
5mA
=
0A
Ic (A)
P
— Ta Derating
■
T
20
10
(W)
T
P
0
0 50 150100
With infinite heatsink
W
ithout heatsink
0
0 0.5 1 5
IC (A)
j-a
— t Characteristics
■
20
10
5
(ºC/W)
j-a
1
1 10 100 1000
t (ms)
Equivalent Circuit Diagram
3
R
B
2
R
BE
1
5
4
6
Single pulse
7
8
Ta (ºC)