Sanken Electric Co STA203A Datasheet
1.2A 3 circuits Triac Array
STA203A
■Features
●1.2A 3 Triacs combined one package
●Repetitive peak off-state voltage: V
●RMS on-state current: I
●Gate trigger current: I
GT
=1.2A
T(RMS)
=3mA max (MODE , , )
DRM
=400V
■Absolute Maximum Ratings
Parameter Symbol
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
Ratings
400
–40 to
–40 to
1.2
10
0.5
0.1
External Dimensions
(Unit: mm)
0.2
±
0.2
±
11.3
2.3
0.5
±
4.7
C1.5
0.2
±
9.0
0.25
±
1.0
0.5
±
13245678
TGTGTGTT
11
0.2
±
20.2
a
b
±
0.5
7✕2.54=17.78
222
0.15
0.25
±
2.54
a. Part Number
b. Lot Number
Unit Conditions
V
A
A
6
V
Conduction angle 360°, Tc=97°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
A
1
W
W
+
125
+
125
°C
°C
0.2
±
4.0
3
0.2
0.15
±
±
0.5
1.2
TR1TR2TR
2
1
57
46
Weight: Approx. 2.1g
3
8
■Electrical Characteristics
Parameter Symbol
Off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Thermal resistance
I
DRM
V
V
I
V
Rth
TM
GT
GT
GD
I
H
0.1
Ratings
typmin max
0.1
2.0
0.7
0.8
2.0
2.0
1.8
2.3
13.0
Unit Conditions
1.0 V
0.1
1.6
mA
V
3.5
1.2
1.2
V
3.0
3.0
3.0
mA
V
5.0
20.0
mA
°C/W
(Tj=25°C, unless otherwise specified)
=
V
, R
D
DRM
GK
V
=
V
, R
D
DRM
GK
Pulse test, I
V
=
6V, R
D
V
=
6V, R
D
=
1/2×V
V
D
=
6V
V
D
L
L
=
=
DRM
TM
10Ω, T
10Ω, T
Junction to case
=
, Tj=125
∞
=
, Tj=25
∞
=
1.6A
=
C
=
C
, Tj=125
25
25
°C
°C
°C
°C
°C
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
+
+
T
, G
2
+
–
T
, G
2
–
–
T
, G
2
–
+
T
, G
2
62
STA203A
v
– iT Characteristics (max)
T
50
(A)
T
10
5
On-state current i
1
0.5
1.0 2.0 3.63.0
I
T(RMS)–PT(AV )
3.0
Full-cycle sinewave
Conduction angle
θ=θ
1+θ2
(W)
)
AV
(
T
2.0
1.0
Tj=25°C
On-state voltage vT (V)
Characteristics
=360°
θ
2
θ
1
Tj=125°C
Average on-state power P
0
0
0.5 1.0 1.5
RMS on-state current I
T(RMS
(A)
)
Pulse trigger temperature Characteristics vgt (Typical)
(MODE –
2.0
DC gate trigger
voltage at 25°C
1.5
( )( )
GT
V
1.0
w
t
Gate trigger voltage
at Tj and
vgt
0.5
0.5 1 10 100 1000
Pulse width t
) (MODE –
vgt
t
w
Tj=– 40°C
–20°C
25°C
75°C
125°C
(µs)
w
Pulse trigger temperature Characteristics
(MODE –
30
10
DC gate trigger
current at 25°C
( )( )
GT
I
1
w
t
Gate trigger current
at Tj and
igt
0.1
0.5 1 10 100 1000
Pulse width t
) (MODE –
igt
t
w
Tj=– 40°C
–20°C
25°C
75°C
125°C
(µs)
w
gt (Typical)
i
I
Ratings
TSM
12
10
(A)
TSM
8
6
4
2
Surge on-state current I
0
1 5 10 50 100
I
– Tc Ratings
T(RMS)
150
125
(°C)
C
100
2 elements operation
3 elements operation
75
50
Full-cycle sinewave
Conduction angle
θ=θ
1+θ2
Case temperature T
25
θ
1
0
0
RMS on-state current I
2.0
DC gate trigger
voltage at 25°C
1.5
( )( )
GT
V
1.0
w
t
Gate trigger voltage
at Tj and
vgt
0.5
0.5 1 10 100 1000
30
10
DC gate trigger
current at 25°C
( )( )
GT
I
1
w
t
Gate trigger current
at Tj and
igt
0.1
0.5 1 10 100 1000
Initial junction temperature
Tj=125°C
10 ms
1cycle
50Hz
Number of cycle
1 element operation
2 elements operation
TR1, TR2 or
()
TR2, TR
(TR2, TR3)
=360°
θ
2
0.5 1.0 1.5
Pulse width t
Pulse width t
T(RMS
) (MODE –
Tj=– 40°C
–20°C
25°C
75°C
125°C
(µs)
w
) (MODE –
Tj=– 40°C
–20°C
25°C
75°C
125°C
(µs)
w
Gate Characteristics
15
I
TSM
(V)
10
GF
5
Gate voltage v
See graph at the upper right
0
0 0.5 1.0 1.5
I
– Ta Ratings
T(RMS)
150
3
(A)
)
vgt
t
w
igt
t
w
125
(°C)
a
100
75
50
25
2 elements operation
Ambient temperature T
3 elements operation
0
0 0.5 1.0 1.5
RMS on-state current I
2.0
DC gate trigger
voltage at 25°C
1.5
( )( )
GT
V
1.0
w
t
Gate trigger voltage
at Tj and
vgt
0.5
0.5 1 10 100 1000
Pulse width t
30
10
DC gate trigger
current at 25°C
( )( )
GT
I
1
w
t
Gate trigger current
at Tj and
igt
0.1
0.5 1 10 100 1000
Pulse width t
P
G
M
=1W
Gate current i
(TR2, TR3)
Tj=– 40°C
Tj=– 40°C
(V)
GT
4
2
Tj=25°C
0
04812
Gate trigger current
Gate trigger voltage V
I
(A)
GF
Full-cycle sinewave
Conduction angle: 360°
Self-supporting
Natural cooling
1 element operation
2 elements operation
T(RMS
)
vgt
t
–20°C
25°C
75°C
125°C
(µs)
w
)
igt
t
–20°C
25°C
75°C
125°C
(µs)
w
Tj= –40°C
Tj= –20°C
(mA)
GT
TR1, TR2 or
()
, TR
TR
2
3
(A)
)
w
w
Transient thermal resistance
Characteristics
200
100
(°C/W)
th
Transient thermal resistance r
Junction to
operating
environment
10
1
1101010
t, Time (ms)
1 element operation
Junction to
2 Lead
T
23104105
63
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