Sanken Electric Co SMA5114 Datasheet

01

0

0.2

0.1

0.3

0.4

0.5

ID (A)

R

DS (ON)

(W)

23

V

GS

=4V

10V

25

30

20

15

10

5

0

With Silicone Grease
Natural Cooling
All Circuits Operating

0 50 100 150

Ta (°C)

PT (W)

With Infinite Heatsink

Without Heatsink

N-channel

SMA5114

Absolute maximum ratings

Symbol Ratings Unit

VDSS 60 V
VGSS ±20 V

ID ±3A

ID(pulse) ±6 (PW≤1ms, Du≤1%) A

EAS* 6.8 mJ

IAS 3A

4

(Ta=25°C, with all circuits operating, without heatsink)

PT

28 ((

Tc=25°C,with all circuits operating, with infinite heatsink

θ

j–a 31.2 (

θ

j–c 4.46 (

Tch 150 °C

Tstg –40 to +150 °C

* : VDD=20V, L=1mH, IL=3A, unclamped,

Junction-Air, Ta=25°C, with all circuits operating)°C/W

Junction-Case, Tc=25°C, with all circuits operating

see Fig. E on page 15.

With built-in flywheel diode

(Ta=25°C)

)W

) °C/W

Electrical characteristics

Symbol Unit Conditions

V(BR)DSS 60 V ID=100µA, VGS=0V

IGSS ±10
IDSS 100

VTH 1.0 2.5 V VDS=10V, ID=250µA

Re(yfs) 1.0 2.3 S VDS=10V, ID=1.0A

W

RDS(ON)

Ciss 170 pF VDS=10V,

Coss 130 pF f=1.0MHz,

Crss 20 pF VGS=0V

td(on) 80 ns ID=1A,

tr 170 ns VDD 30V,

td(off) 330 ns RL=30Ω, VGS=5V,

tf 150 ns

■Equivalent circuit diagram

VSD 1.0 1.5 V ISD=3A, VGS=0V

trr 80 ns ISD=±100mA

9432

1110

●Diode for flyback voltage absorption

Symbol Unit Conditions

1

5

8

12

VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A

76

IR 10
trr 100 ns IF=±100mA

Characteristic curves

Specification

min typ max

0.20 0.25 Ω VGS=10V, ID=1.0A

0.25 0.30 Ω VGS=4V, ID=1.0A

Specification

min typ max

External dimensions

µ

AVGS=±20V

µ

AVDS=60V, VGS=0V

see Fig. 3 on page 16.

µ

AVR=120V

B

• • •

SMA

(Ta=25°C)

ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)

3

2

(A)

D

I

1

0

02468

Re

10

5

1

Re (yfs) (S)

0.5

0.2

0.05 0.1 0.5

I

DR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics

3

2

(A)

DR

I

1

0

0 0.5 1.0 1.5

°C

125

=4V

GS

V

10V

50

VDS (V)

(VDS=10V)

=–40°C

C

T

3

100 150

(TC=25°C)

10ms (1shot)

45

(ID=1A)

100µs

1ms

100

500

100

50

10

Capacitance (pF)

5

1

02010 30

VDS (V)

VGS=0V
f=1MHz

Ciss

Coss

Crss

40 50

10V

(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)

TC=–40°C

25°C

5V

VDS (V)

125°C

ID (A)

VSD (V)

3.4V

3.2V

3V

V

GS

=2.8V

10

(VDS=10V)

1

3

=0V

GS

V

3

2

(A)

D

I

1

0

012

0.5

0.4

0.3

(Ω)

DS (ON)

0.2

R

0.1

0
–40 0

10

ID (pulse) max

5

R

DS (ON)

LIMITED

1

(A)

D

I

0.5

0.1

0.05

10.5 5 5010

°C

25

VGS (V)

TC (°C)

107