Sanken Electric Co SMA5113 Datasheet

MOS FET Array SMA5113

Absolute Maximum Ratings

(Ta=25ºC) Symbol Ratings Unit V

DSS

V

GSS

I

D

1

I

*

D (pulse)

P

T

2

E

*

AS

I

AS

j-a

j-c

T

ch

Tstg

*

1 P

100µs, duty 1%

W

*

2 V

30V, L

=

DD

50Ω

R

=

G

—

■

I

V

D

7

6

5

4

(A)

D

3

I

2

1

0

0 5 10 15 20

450

±30

±7

±28

4 (Ta=25ºC, All circuits operate, No Fin)

35 (Tc=25ºC, All circuits operate,

130

W

∞

Fin)

W

mJ

7

Junction - Ambientare,

31.2

Ta=25ºC, All circuits operate Junction - Case,

3.57

Ta=25ºC, All circuits operate

150

–55 to +150

5mH, I

=

Characteristics

DS

10V

ºC/W ºC/W

7A, unclamped,

=

L

V

(V)

DS

ºC ºC

Electrical Characteristics

V V A A

A

V

Symbol Test Conditions

V

(BR) DSSID

I

GSS

I

DSS

V

TH

R

e (

yfs)

R

DS (ON

)

Ciss Coss Crss t

on

d

(

)

r

t

off

td

(

)

tf V

SD

5.5V

5V

= 4.5V

GS

V

DS

V

DS

V

DS

V

GS

I

SD

■

Ratings

min typ max

100µA, V

=

V

GS

450V, V

=

10V, I

=

20V, I

=

10V, I

=

V

f

= V

I

V

DD

R

V

R

7A, V

=

I

D

(A)

D

I

0V

=

GS

30V

= ±

GS

=

D

=

D

=

D

10V

=

DS

1.0MHz 0V

=

GS

3.5A

=

D

200V

57Ω

=

L

10V

=

GS

50Ω

=

G

=

GS

—

Characteristics

V

GS

7

6

5

4

3

2

1

0

0246810

450

±100

0V

=

1mA 4.0

3.5A 3.5

3.5A

2.0

5.0

0.84 1.1 720 150 65 25 40 70 50

V

GS

1.0 1.5

T

(V)

= –55ºC

a

150ºC

0V

V

= 20V

DS

100

25ºC

(Ta=25ºC)

Unit

V

nA µA

V S

Ω

pF pF pF ns ns ns ns

V

External Dimensions

31.0

±0.2

a

10.2

2.4

(10.4)

11•P2.54

31.5max

123456789101112

■

—

R

(on)

DS

1.5

1.0

(Ω)

DS (on)

R

0.5

I

D

0

01234567

SMA (LF1000)

±0.2

b

1.21

±0.15

1.46

=27.94

0.85

I

(A)

D

±0.1

Characteristics

±0.15

+0.2 –0.1

±0.2

4.0

30º

+0.2 –0.1

0.55

a) Type No. b) Lot No.

(Unit: mm)

V

= 10V

GS

±0.2

2.5

±0.1

1.2

—

■

R

(on)

DS

2.5

2.0

1.5

(Ω)

DS (on)

1.0

R

0.5

0

–50 0 50 100 150

Characteristics

T

C

V

Tc (ºC)

Capacitance — V

■

1000

500

100

Capacitance (pF)

50

20

01020304050

Characteristics

DS

V

(V)

DS

= 10V

GS

I

= 3.5A

D

V

= 0V

GS

f

= 1MHz

Ciss

Coss

Crss

R

e (yfs)

100

50

—

I

D

V

DS

■

Characteristics

(S)

(yfs)

e

10

R

5

2

0.05 0.1 0.5 1 7

I

(A)

D

Safe Operating Area (single pulse)

■

50

I

max

D

(pulse)

D

max

R

E

IT

IM

L

(on)

DS

10ms

100ms

V

DS

1ms

(V)

10

I

D (DC)

5

(A)

D

I

1

0.5

0.1

0.05 3 5 10 50 100 500

= 20V

T

a

100µs

= –55ºC

25ºC

150ºC

(Ta

= 25ºC)

—

■

(A) I

I

DR

DR

Characteristics

V

SD

7

6

5

4

3

2

1

0

00.40.2 0.6 0.8 1.0

V

= 0V

GS

V

(V)

SD

Equivalent Circuit Diagram

3

1

2

6

4

5

7

8

9

10

11

12

81

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