Sanken Electric Co SMA5105 Datasheet
0
25
30
20
15
10
5
0
With Silicone Grease
Natural Cooling
All Circuits Operating
0 50 100 150
Ta (°C)
PT (W)
With Infinite Heatsink
Without Heatsink
N-channel
SMA5105
Absolute maximum ratings
Symbol Ratings Unit
VDSS 100 V
VGSS ±10 V
ID ±5A
ID(pulse) ±10 (PW≤1ms) A
EAS*32mJ
IF5 (PW≤0.5ms, Du≤25%) A
IFSM 10 (PW≤10ms, Single pulse) A
VR 120 V
4 (
PT
θ
θ
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=2mH, ID=5A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
Ta=25°C, with all circuits operating, without heatsink
28 (
Tc=25°C,with all circuits operating, with infinite heatsink
j–a 31.2
j–c 4.46
(Junction-Air, Ta=25°C, with all circuits operating)
(
Junction-Case, Tc=25°C, with all circuits operating)°C/W
2
463
9
1110
With built-in flywheel diode
(Ta=25°C)
) W
)W
°C/W
Electrical characteristics
Symbol Unit Conditions
V(BR)DSS 100 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±10V
IDSS 250
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 3.1 4.5 S VDS=10V, ID=5A
RDS(ON)
Ciss 470 pF VDS=25V, f=1.0MHz,
Coss 130 pF VGS=0V
ton 70 ns ID=5A, VDD 50V,
toff 50 ns
VSD 1.2 2.0 V ISD=5A, VGS=0V
trr 330 ns ISD=±100mA
●Diode for flyback voltage absorption (1 circuit)
Symbol Unit Conditions
VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
IR 10
1
5
8
12
trr 100 ns IF=±100mA
Specification
min typ max
0.27 0.30 Ω VGS=10V, I D=2.5A
0.38 0.41 Ω VGS=4V, ID=2.5A
Specification
min typ max
External dimensions
µ
AVDS=100V, VGS=0V
see Fig. 3 on page 16.
µ
AVR=120V
B
• • •
SMA
(Ta=25°C)
VGS=5V,
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
10
8
6
(A)
D
I
4
2
0
02 10
Re
(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
10
5
Re (yfs) (S)
1
0.5
0.3
0.05 0.5 1
DR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
I
10
8
104
(A)
DR
I
6
4
2
0
0 1.0 1.5
10V
0.1
0.5
7
VGS=2.5V
468
VDS (V)
(VDS=10V)
TC=–40°C
25°C
125°C
ID (A)
10V
4V
V
GS
=0V
VSD (V)
4V
3.5V
3V
510
10
8
6
ID (A)
4
TC=–40°C
25°C
2
125°C
0
01234
0.6
0.5
0.4
(Ω)
0.3
DS (ON)
R
0.2
0.1
–4000 50 100
20
ID (pulse) max
10
5
(A)
D
I
1
0.5
0.1
0.5
VGS (V)
VGS=4V
VGS=10V
TC (°C)
LIMITED
DS (ON)
R
1 5 10 50 10
10ms (1shot)
VDS (V)
(VDS=10V)
(ID=2.5A)
(TC=25°C)
100µs
1ms
0.4
0.3
(Ω)
0.2
DS (ON)
R
0.1
5
2000
1000
500
100
Capacitance (pF)
50
150
10
VGS=4V
VGS=10V
00123
01020304050
4567 1089
ID (A)
VGS=0V
f=1MHz
Ciss
Coss
Crss
VDS (V)
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