20
0.02 0.05
h
FE
IC (A)
0.1 0.5 1 4
(VCE=4V)
10000
5000
1000
500
100
50
75°C
25°C
–30°C
T
a
=125°C
4
2
0
0
(VCE=4V)
I
C
(A)
VBE (V)
1
3
1
23
75°C
25°C
–30°C
T
a
=125°C
5
1
0.5
0.1
0.05
I
C
(A)
VCE (V)
3
100µs
1ms
10ms
Single Pulse
Without Heatsink
Ta=25°C
5 10 50 100
NPN Darlington
SMA4033
Absolute maximum ratings
With built-in flywheel diode
(Ta=25°C)
Electrical characteristics
Symbol Ratings Unit
VCBO 120 V
VCEO 100 V
VEBO 6V
IC 2A
ICP 4 (PW≤1ms, Du≤50%) A
IB 0.2 A
IF 2 (PW≤0.5ms, Du≤25%) A
●Diode for flyback voltage absorption
IFSM 4 (PW≤10ms, Single pulse) A
VR 120 V
PT W
4 (Ta=25°C)
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
1
234
5
8
91011
12
External dimensions
Symbol Unit Conditions
ICBO 10
Specification
min typ max
µ
AVCB=120V
B
IEBO 10 mA VEB=6V
VCEO 100 V IC=25mA
hFE 2000 6000 15000 VCE=4V, IC=1A
VCE(sat) 1.1 1.5 V
VBE(sat) 1.7 2.0 V
Symbol Unit Conditions
Specification
min typ max
IC=1A, IB=2mA
VR 120 V IR=10µA
VF 1.8 V IF=1A
IR 10
µ
AVR=120V
trr 100 ns IF=±100mA
• • •
SMA
(Ta=25°C)
(Ta=25°C)
2
R
1
R
6
7
R1: 4kΩ typ R2: 150Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
T
a
=125°C
(VCE=4V)
typ
(IC=1A)
4
3
2
(A)
C
I
1
0
01
CE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
V
3
2
(sat) (V)
CE
V
1
2
3mA
2mA
VCE (V)
=4mA
B
I
3456
(IC / IB=1000)
75°C
=125°C
a
T
1.2mA
0.6mA
0.4mA
25°C
0.3mA
–30°C
10000
5000
1000
FE
500
h
100
(sat) (V)
CE
V
50
20
0.02 0.05
3
2
1
0.1 0.5 1 4
IC (A)
25°C
75°C
–30°C
96
0
20
10
(°C / W)
j–a
θ
0.5
0.5 1 4
0.2
θ
j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
5
1
0.5 100 1000500501051
0.2
IC (A)
PW (mS)
0
0.1
20
15
10
(W)
T
P
5
Without Heatsink
0
–40 0 50 100 150
I
B (
mA)
Ta (°C)
With Infinite Heatsink
510.5