–6
–4
–2
0
0–1
–2 –3
–1
–3
–5
–30°C
T
a
=125°C
75°C
25°C
(VCE=–4V)
I
C
(A)
VBE (V)
–10
–0.1
–0.03
–5
–1
–0.5
–0.05
–5–3 –10 –50 –100
10ms
1ms
100µs
Single Pulse
Without Heatsink
Ta=25°C
10µs
IC (A)
VCE (V)
PNP Darlington
SMA4021
Absolute maximum ratings
Symbol Ratings Unit
VCBO –60 V
VCEO –60 V
VEBO –6 V
IC –3 A
ICP –6 (PW≤1ms, Du≤50%) A
IB –0.5 A
IF –6 (PW≤0.5ms, Du≤25%) A
IFSM –8 (PW≤10ms, Single pulse) A
VR 100 V
6
5
4 (Ta=25°C)
20 (Tc=25°C)
8
7
12
PT W
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
2
R
1
R
1
With built-in flywheel diode
(Ta=25°C)
Electrical characteristics
Symbol Unit Conditions
ICBO –10
IEBO –10 mA VEB=–6V
VCEO –60 V IC=–10mA
hFE 2000 5000 12000 VCE=–4V, IC=–2A
VCE(sat) –1.5 V
VBE(sat) –2.0 V
Specification
min typ max
●Diode for flyback voltage absorption
Symbol Unit Conditions
VR 100 V IR=10µA
VF 1.2 V IF=1A
IR 10
trr 100 ns IF=±100mA
Specification
min typ max
External dimensions
µ
AVCB=–60V
IC=–2A, IB=–4mA
µ
AVR=100V
B
• • •
SMA
(Ta=25°C)
(Ta=25°C)
234
91011
R1: 2kΩ typ R2: 150Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
–6
–4
(A)
C
I
–2
0
0 –1–2–3–4–5–6
CE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
V
–3
–2
(sat) (V)
CE
V
–1
T
a
125°C
=–2.2mA
B
I
=–30°C
–1.8mA
VCE (V
–1.5mA
–1.2mA
–1.0mA
–0.9mA
–0.8mA
(IC / IB=1000)
25°C
75°C
10000
5000
1000
FE
h
500
100
50
–0.03
–3
–2
VCE (sat) (V)
–1
–0.05 –0.1
IC (A)
(VCE=–4V)
typ
–0.5 –1 –5 –6
IC=–4A
IC=–2A
IC=–1A
10000
FE
h
5000
1000
500
100
50
–0.03
–0.05 –0.1
a
T
75˚C
25˚C
=125˚C
IC (A)
(VCE=–4V)
–30˚C
–0.5 –1 –5 –6
0
–0.5 –1 –5 –6
θ
20
10
5
θj–a (°C / W)
1
0.5
1 5 10 50 100 500 1000
IC (A)
j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
PW (mS)
0
–0.2 –0.5 –1 –5 –10 –50
20
15
10
(W)
T
P
5
Without Heatsink
0
–40 0 50 100 150
IB (mA)
With Infinite Heatsink
Ta (°C)
–100
93