Sanken Electric Co SLA5070 Datasheet
N-channel
SLA5070 External dimensions
General purpose
A
• • •
SLA
Absolute maximum ratings
Symbol Unit
FET 1 FET 2
Ratings
(Ta=25°C)
VDSS 150 V
VGSS +20, –10 V
ID ±7A
ID(pulse) ±15 (PW≤100µs, duty≤1%) A
EAS* 100 A
PT
θ
j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ
j-c 2.08 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
5 (Ta=25°C, with all circuits operating, without heatsink) W
60 (Tc=25°C, with all circuits operating, with infinite heatsink) W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
*VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.
■Equivalent circuit diagram
3
6
89101112
FET-1 FET-1 FET-2 FET-2 FET-2 FET-2
2
5
7
1
Pin 4: NC
14
13
15
Characteristic curves
7
10V
6
5
4
ID (A)
3
2
1
0
0246
100
80
60
(mΩ)
40
DS (ON)
R
20
0
0123 5476
200
FET 1 FET 2 FET 1
4V
VDS (V)
FET 1 FET 2 FET 2
4V
VGS=10V
ID (A)
FET 1 FET 2
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical)
2.6V
2.4V
VGS=2.2V
810
7
10V
6
4V
5
4
(A)
D
I
3
2
1
0
024 6810
VDS (V)
2.8V
2.6V
2.4V
VGS=2.2V
7
6
5
4
(A)
D
I
3
2
1
0
01234
VGS (V)
°C
25
Tc=125°C
RDS(ON)-ID Characteristics (Typical)
200
150
100
RDS (ON) (mΩ)
50
0
01234567
ID (A)
4V
=10V
GS
V
7
6
5
4
(A)
D
I
3
2
1
0
01234
Tc=125°C
VGS (V)
°C
25
RDS(ON)-TC Characteristics (Typical)
(ID=3.5A)
500
(ID=3.5A)
(VDS=10V)
°C
–40
°C
–40
(VDS=10V)
4V
=10V
(mΩ)
100
DS (ON)
R
0
–40 0 50 100 150
GS
V
T
C
(°C)
400
TC (°C)
4V
=10V
GS
V
300
(mΩ)
200
DS (ON)
R
100
0
–40 0 50 100 150
SLA5070
Electrical characteristics
FET 1 FET 2
Symbol Specification
min typ max min typ max
Unit Conditions
V(BR)DSS 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=20V, –10V ±100 nA VGS=20V, –10V
IDSS 100
µ
AVDS=150V, VGS=0V 100
VTH 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 712 SVDS=10V, ID=3.5A 4 9 S VDS=10V, ID=3.5A
RDS(ON)
80 105 mΩ VGS=10V, ID=3.5A 150 200 mΩ VGS=10V, ID=3.5A
85 115 mΩ VGS=4V, ID=3.5A 170 230 mΩ VGS=4V, ID=3.5A
Ciss 1600 pF VDS=10V 870 pF VDS=10V
Coss 380 pF f=1.0MHz 320 pF f=1.0MHz
Crss 90 pF VGS=0V 210 pF VGS=0V
td (on) 35 ns ID=3.5A 25 ns ID=3.5A
tr 70 ns VDD 70V 55 ns VDD 70V
td (off) 125 ns RL=20Ω 80 ns RL=20Ω
tf 90 ns VGS=5V 50 ns VGS=5V
VSD 1.0 1.5 V ISD=7A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V
trr 320 ns IF=±100mA 500 ns IF=±100mA
Specification
Unit Conditions
µ
AVDS=150V, VGS=0V
(Ta=25°C)
Characteristic curves
30
10
5
Re (yfs) (S)
1
0.5
0.3
0.05 0.1 0.5 1 5 7
5000
1000
500
Capacitance (pF)
100
50
01020304050
7
6
5
4
(A)
DR
I
3
2
1
0
0 0.5 1.0 1.5
FET 1 FET 2 FET 1
°C
=–40
C
T
25°C
ID (A)
Capacitance-VDS Characteristics (Typical)
FET 1 FET 2 FET 2
VDS (V)
FET 1 FET 2
10V
4V
VGS=0V
VSD (V)
Re(yfs)-ID Characteristics (Typical) Safe Operating Area (SOA)
(VDS=10V)
°C
125
VGS=0V
f=1MHz
Ciss
Coss
Crss
20
10
5
Re (yfs) (S)
1
0.5
0.3
0.05 0.1 0.5 1 5 7
5000
1000
500
Capacitance (pF)
100
50
40
01020304050
ID (A)
VDS (V)
(VDS=10V)
°C
=–40
C
T
125°C
25°C
VGS=0V
f=1MHz
Ciss
Coss
Crss
20
10
ID (pulse) MAX
5
(on) LIMITED
DS
R
1
(A)
D
0.5
I
ID (pulse) MAX
(on) LIMITED
DS
R
1-circuit operation
VDS (V)
1-circuit operation
VDS (V)
0.1
0.05
0.01
0.5 1 5 10 50 200100
20
10
5
(A)
D
0.5
I
0.1
0.05
0.01
0.5 1 5 10 50 200100
IDR-VSD Characteristics (Typical) PT-Ta Characteristics
7
6
5
IDR (A)
4
3
2
1
0
10V
4V
VGS=0V
0 0.5 1.0 1.5
VSD (V)
60
40
(W)
T
P
20
Without Heatsink
5
0
0 50 100 150
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
Ta (°C)
(T
10ms (1shot)
(TC=25°C)
1ms
10ms (1shot)
1ms
C
=25°C)
100ms
100µs
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