Sanken Electric Co SLA5057 Datasheet
N-channel
SLA5057 External dimensions
General purpose
A
• • •
SLA
Absolute maximum ratings
Symbol Unit
FET 1 FET 2
Ratings
(Ta=25°C)
VDSS 200 V
VGSS ±20 V
ID ±7A
ID(pulse) * ±15 A
PT
θ
j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ
j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : PW≤100µs, duty≤50%
■Equivalent circuit diagram
3
6
8
101112
FET-1 FET-1 FET-2 FET-2 FET-2 FET-2
2
5
7
9
1
4 pin is NC
14
13
15
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical)
10
8
6
(A)
D
I
4
2
0
024
RDS(ON)-ID Characteristics (Typical)
200
150
100
RDS (ON) (mΩ)
50
0
02
RDS(ON)-TC Characteristics (Typical)
400
FET 1 FET 2 FET 1
5V
10V
5.5V
6V
4.5V
=4V
GS
V
6
VDS (V)
FET 1 FET 2 FET 2
41086
ID (A)
FET 1 FET 2
810
(VGS=10V)
ID=5A
V
GS
=10V
7
6V
6
5
4
(A)
D
I
3
2
1
0
02 468
0.5
0.4
0.3
(Ω)
DS (ON)
0.2
R
0.1
0
02134
1.0
5.5V
10V
5V
4.5V
V
GS
=4V
VDS (V)
5
ID (A)
(VGS=10V)
67
ID=3.5A
V
GS
=10V
10
10
8
6
(A)
D
I
4
2
0
024
7
6
5
4
(A)
D
I
3
2
1
0
024
125°C
= –40°C
C
T
25°C
VGS (V)
V
GS
(V)
(VDS=10V)
6
TC= –40°C
25°C
125°C
6
(
VDS=10V)
8
8
300
(mΩ)
200
DS (ON)
R
100
0
–40
TC (°C)
0.8
0.6
(Ω)
DS (ON)
0.4
R
0.2
0
150100500
–40 0
50
TC (°C)
100 150
SLA5057
Electrical characteristics
FET 1 FET 2
Symbol Specification
min typ max min typ max
Unit Conditions
V(BR)DSS 200 V ID=100µA, VGS=0V 200 V ID=100µA, VGS=0V
IGSS ±100 nA VGS=±20V ±100 nA V GS=±20V
IDSS 100
µ
AVDS=200V, VGS=0V 100
VTH 2.0 4.0 V VDS=10V, ID=1mA 2.0 4.0 V VDS=10V, ID=1mA
Re(yfs) 4.5 6.5 S VDS=10V, ID=3.5A 2.5 5.0 S VDS=10V, ID=3.5A
RDS(ON) 130 175 mΩ VGS=10V, ID=3.5A 270 350 mΩ VGS=10V, ID=3.5A
Ciss 850 pF VDS=10V 450 pF VDS=10V
Coss 550 pF f=1.0MHz 280 pF f=1.0MHz
Crss 250 pF VGS=0V 120 pF VGS=0V
td (on) 20 ns ID=3.5A 20 ns ID=3.5A
tr 25 ns VDD 100V 30 ns VDD 100V
td (off) 90 ns RL=28.6Ω 55 ns RL=28.6Ω
tf 70 ns VGS=10V 75 ns VGS=10V
VSD 1.0 1.5 V ISD=7A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V
trr 500 ns IF=±100mA 450 ns IF=±100mA
Specification
Unit Conditions
µ
AVDS=200V, VGS=0V
(Ta=25°C)
Characteristic curves
Re(yfs)-ID Characteristics (Typical) Safe Operating Area (SOA)
20
10
5
Re (yfs) (S)
1
0.5
0.3
0.05 0.1 0.5
Capacitance-VDS Characteristics (Typical)
3000
1000
500
100
Capacitance (pF)
50
10
010 50403020
FET 1 FET 2 FET 1
FET 1 FET 2 FET 2
=–40°C
C
T
ID (A)
VDS (V)
1
=125°C
C
T
TC=25°C
(VDS=10V)
510
VGS=0V
f=1MHz
Ciss
Coss
Crss
10
5
Re (yfs) (S)
1
0.5
0.3
0.05 0.50.1
2000
1000
500
100
50
Capacitance (pF)
10
5
3
02010 30
VDS (V)
(VDS=10V)
=–40°C
c
T
25°C
125°C
175
ID (A)
VGS=0V
f=1MH
Ciss
Coss
Crss
40 50
ID (pulse) max
50
LIMITED
10
DS (on)
R
5
1
(A)
D
I
0.5
0.1
0.05
0.01
0.5 1 5 5010
Z
20
10
5
R
DS (on)
(A)
1
D
I
0.5
0.1
0.05
53 10 10050
ID (pulse) max
LIMITED
1-circuit operation
VDS (V)
1ms
10ms (1shot)
1-circuit operation
VDS (V)
1ms
10ms (1shot)
100µs
(TC=25°C)
100µs
100 500
(TC=25°C)
500
IDR-VSD Characteristics (Typical) PT-Ta Characteristics
10
8
6
(A)
DR
I
4
2
0
0 0.5 1.0 1.5
FET 1 FET 2
5.10V
=0V
GS
V
VSD (V)
7
6
5
4
IDR (A)
3
2
1
0
5.10V
0 0.5 1.0 1.5
=0V
GS
V
VSD (V)
40
35
30
25
20
(W)
T
P
15
10
Without Heatsink
5
0
0 50 100 150
With Infinite Heatsink
Ta (°C)
With Silicone Grease
Natural Cooling
All Circuits Operating
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