Sanken Electric Co SLA5055 Datasheet
VGS (V)
I
D
(A)
Tc=125°C
25°C
5
4
3
2
1
0
01234
(VDS=10V)
–40°C
N-channel
SLA5055 External dimensions
General purpose
A
• • •
SLA
Absolute maximum ratings
Symbol Unit
FET 1 FET 2
Ratings
(Ta=25°C)
VDSS 150 V
VGSS +20, –10 V
ID ±5 ±7A
*
ID (pulse)
PT
θ
j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ
j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
±10 ±15 A
5 (Ta=25°C, with all circuits operating, without heatsink) W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* PW≤100µs, duty≤50%
■Equivalent circuit diagram
3
5
7
9
11
FET-1 FET-2 FET-2 FET-2
2
4
6
FET-2
10
8
1
12
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical)
5
10V
4
3
(A)
D
I
2
1
0
024 6810
RDS(ON)-ID Characteristics (Typical)
500
400
300
(mΩ)
200
DS (ON)
R
100
0
012345
FET 1 FET 2 FET 1
4V
2.8V
2.6V
2.4V
VGS=2.2V
VDS (V)
FET 1 FET 2 FET 2
4V
=10V
GS
V
ID (A)
7
10V
6
4V
5
4
(A)
D
I
3
2
1
0
024 6810
200
150
(mΩ)
100
DS (ON)
R
50
0
01234567
VDS (V)
ID (A)
V
GS
2.8V
2.6V
2.4V
VGS=2.2V
4V
=10V
5
4
3
(A)
D
I
2
1
0
01234
Tc=125°C
VGS (V)
(VDS=10V)
25°C
–40°C
RDS(ON)-TC Characteristics (Typical)
1.0
(Ω)
0.5
DS (ON)
R
0
–40 0 50 100 150
FET 1 FET 2
TC (°C)
(I
D
=2.5A)
4V
=10V
GS
V
500
400
300
(mΩ)
200
DS (ON)
R
100
0
-40 0 50 100 150
TC (°C)
4V
=10V
GS
V
(ID=3.5A)
SLA5055
Electrical characteristics
FET 1 FET 2
Symbol Specification
min typ max min typ max
Unit Conditions
V(BR)DSS 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V
IGSS 100 nA VGS=20V 100 nA VGS=20V
IDSS 100
µ
AVDS=150V, VGS=0V 100
VTH 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 3 5.5 S VDS=10V, ID=2.5A 4 9 S VDS=10V, ID=3.5A
RDS(ON)
330 440 mΩ VGS=10V, ID=2.5A 150 200 mΩ VGS=10V, ID=3.5A
370 480 mΩ VGS=4V, ID=2.5A 170 230 mΩ VGS=4V, ID=3.5A
Ciss 380 pF VDS=10V 870 pF VDS=10V
Coss 95 pF f=1.0MHz 320 pF f=1.0MHz
Crss 25 pF VGS=0V 210 pF VGS=0V
td (on) 25 ns ID=2.5A 25 ns ID=3.5A
tr 50 ns VDD 70V 55 ns VDD 70V
td (off) 55 ns RL=28W 80 ns RL=20Ω
tf 40 ns VGS=5V 50 ns VGS=5V
VSD 1.1 1.5 V ISD =5A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V
trr 180 ns IF=±100mA 500 ns IF=±100mA
Specification
Unit Conditions
µ
AVDS=150V, VGS=0V
(Ta=25°C)
Characteristic curves
Re(yfs)-ID Characteristics (Typical) Safe Operating Area (SOA)
10
5
Re (yfs) (S)
1
0.5
0.3
0.05 0.1 0.5 1 5
Capacitance-VDS Characteristics (Typical)
1000
500
100
50
Capacitance (pF)
10
01020304050
IDR-VSD Characteristics (Typical) PT-Ta Characteristics
5
4
3
(A)
DR
I
2
1
0
0 0.5 1.0 1.5
FET 1 FET 2 FET 1
ID (A)
FET 1 FET 2 FET 2
FET 1 FET 2
10V
VSD (V)
=–40°C
C
T
VDS (V)
4V
125
25
VGS=0V
(VDS=10V)
°C
°C
VGS=0V
f=1MHz
Ciss
Coss
Crss
20
10
5
(VDS=10V)
=–40°C
°C
C
T
125
25
°C
Re (yfs) (S)
1
0.5
0.3
0.05 0.1 0.5 1 5 7
5000
1000
500
ID (A)
VGS=0V
f=1MHz
Capacitance (pF)
100
50
40
01020304050
7
6
5
4
(A)
DR
I
3
2
1
0
0 0.5 1.0 1.5
VDS (V)
10V
4V
VGS=0V
VSD (V)
Ciss
Coss
Crss
20
ID (pulse) MAX
10
5
(on) LIMITED
DS
R
1
(A)
D
0.5
I
0.1
0.05
0.01
0.5 1 5 10 50 200100
20
10
ID (pulse) MAX
5
(on) LIMITED
DS
R
(A)
D
0.5
I
0.1
0.05
0.01
0.5 1 5 10 50 200100
40
35
30
25
20
PT (W)
15
10
Without Heatsink
5
0
0 50 100 150
10ms (1shot)
1-circuit operation
VDS (V)
10ms (1shot)
1-circuit operation
VDS (V)
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
Ta (°C)
(T
100µs
1ms
(TC=25°C)
1ms
C
=25°C)
100µs
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