N-channel
VDS (V)
I
D
(A)
10V
4V
2.8V
2.6V
2.4V
7
6
5
4
3
2
1
0
024 6810
VGS=2.2V
VGS (V)
I
D
(A)
Tc=125
°C
25
°C
5
4
7
6
3
2
1
0
01234
(VDS=10V)
–40°C
• • •
SLA5054 External dimensions
Absolute maximum ratings ■Equivalent circuit diagram
Symbol
FET1 FET2 FET3
VDSS 150 V
VGSS +20, –10 V
ID ±7 ±5 ±7A
*
ID(pulse)
PT
θ
j-a 25 (
θ
j-c 3.57 (
±15 ±10 ±15 A
5 (
Ta=25°C, with all circuits operating, without heatsink
35 (
Tc=25°C, with all circuits operating, with infinite heatsink
Junction-Air, Ta=25°C, with all circuits operating
Junction-Case, Tc=25°C, with all circuits operating
VISO 1000 (
Ratings
Between fin and lead pin, AC
General purpose
a=25°C)
(T
Unit
)W
)W
) °C/W
) °C/W
) Vrms
3
6
8
101112
FET-1 FET-1 FET-2 FET-2 FET-3 FET-3
2
5
7
9
1
Pin 4: NC
Tch 150 °C
Tstg –40 to +150 °C
*PW≤100µs, duty≤50%
Electrical characteristics
Symbol Specification
min typ max min typ max min typ max
V(BR)DSS 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V
IGSS 100 nA VGS=20V 100 nA VGS=20V 100 nA VGS=20V
IDSS 100µAVDS=150V, VGS=0V 100µAVDS=150V, VGS=0V 100µAVDS=150V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 712 S VDS=10V, ID=3.5A 3 5.5 S VDS=10V, ID=2.5A 4 9 S VDS=10V, ID=3.5A
RDS(ON)
80 105 mΩ VGS=10V, ID=3.5A 330 440 mΩ VGS=10V, ID=2.5A 150 200 mΩ VGS=10V, ID=3.5A
85 115 mΩ VGS=4V, ID=3.5A 370 480 m Ω VGS=4V, ID=2.5A 170 230 mΩ VGS=4V, ID=3.5A
Ciss 1600 pF VDS=10V 380 pF VDS=10V 870 pF VDS=10V
Coss 380 pF f=1.0MHz 95 pF f=1.0MHz 320 pF f=1.0MHz
Crss 90 pF VGS=0V 25 pF VGS=0V 210 pF VGS=0V
td(on) 35 ns ID=3.5A 25 ns ID=2.5A 25 ns ID=3.5A
tr 70 ns VDD 70V 50 ns VDD 70V 55 ns VDD 70V
td(off) 125 ns RL=20Ω 55 ns RL=28Ω 80 ns RL=20Ω
tf 90 ns VGS=5V 40 ns VGS=5V 50 ns VGS=5V
VSD 1.0 1.5 V ISD=7A, VGS=0V 1.1 1.5 V ISD=5A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V
trr 320 ns IF=±100mA 180 ns IF=±100mA 500 ns IF=±100mA
FET1 FET2 FET3
Unit Conditions
Specification
Unit Conditions
Specification
Unit Conditions
A
13
14
15
(Ta=25°C)
SLA
Characteristic curves
ID-VDS Characteristics (Typical) FET1 FET2 FET3
ID-VGS Characteristics (Typical) FET1 FET2 FET3
RDS(ON)-ID Characteristics (Typical) FET1 FET2 FET3
7
10V
4V
6
5
4
(A)
D
I
3
2
1
0
0246
7
6
5
4
(A)
D
I
3
2
1
0
01234
100
80
60
(mΩ)
40
DS (ON)
R
20
0
0123 5476
VDS (V)
VGS (V)
ID (A)
°C
25
Tc=125°C
2.6V
2.4V
VGS=2.2V
810
(VDS=10V)
°C
–40
4V
VGS=10V
5
10V
4V
4
25°C
–40°C
=10V
GS
V
2.8V
2.6V
2.4V
VGS=2.2V
(VDS=10V)
4V
3
(A)
D
I
2
1
0
024 6810
5
4
3
(A)
D
I
2
1
0
01234
500
400
300
(mΩ)
200
DS (ON)
R
100
0
012345
VDS (V)
Tc=125°C
VGS (V)
I
D
(A)
200
150
(mΩ)
100
DS (ON)
R
50
0
01234567
ID (A)
4V
=10V
GS
V
SLA5054
ID (A)
Re (yfs) (S)
T
C
=–40
°C
20
10
5
1
0.5
0.3
0.05 0.1 0.5 1 5 7
125°C
25°C
(VDS=10V)
TC (°C)
R
DS (ON)
(mΩ)
4V
V
GS
=10V
500
400
200
100
300
0
–40 0 50 100 150
(ID=3.5A)
Capacitance (pF)
Coss
Crss
5000
500
1000
40
50
100
01020304050
VDS (V)
Ciss
VGS=0V
f=1MHz
Re(yfs)-ID Characteristics (Typical) FET1 FET2 FET3
30
10
5
Re (yfs) (S)
1
0.5
0.3
0.05 0.1 0.5 1 5 7
RDS(ON)-TC Characteristics (Typical) FET1 FET2 FET3
200
(mΩ)
100
DS (ON)
R
0
–40 0 50 100 150
ID (A)
Capacitance-VDS Characteristics (Typical)
5000
1000
500
Capacitance (pF)
100
50
01020304050
IDR-VSD Characteristics (Typical) FET1 FET2 FET3
7
6
5
10V
4V
4
(A)
DR
I
3
2
1
0
0 0.5 1.0 1.5
VSD (V)
Safe Operating Area (SOA) FET1 FET2 FET3
20
10
ID (pulse) MAX
5
LIMITED
)
on
DS (
R
1
0.5
ID (A)
0.1
0.05
1-circuit operation
(VDS=10V)
°C
=–40
°C
C
T
125
°C
25
10
5
(VDS=10V)
°C
=–40
C
T
125°C
25°C
Re (yfs) (S)
1
0.5
0.3
0.05 0.1 0.5 1 5
(ID=3.5A)
4V
=10V
GS
V
TC (°C)
FET1 FET2 FET3
VGS=0V
f=1MHz
Ciss
Coss
Crss
1.0
(Ω)
0.5
DS (ON)
R
0
–40 0 50 100 150
1000
500
100
50
Capacitance (pF)
10
01020304050
VDS (V)
5
4
VGS=0V
10ms (1shot)
(T
C=25°C)
1ms
100µs
3
(A)
DR
I
2
1
0
0 0.5 1.0 1.5
20
ID (pulse) MAX
10
5
R
1
(A)
D
0.5
I
0.1
0.05
(on) LIMITED
DS
ID (A)
TC (°C)
VDS (V)
10V
4V
VSD (V)
1-circuit operation
V
VGS=0V
1ms
10ms (1shot)
(ID=2.5A)
4V
=10V
GS
VGS=0V
f=1MHz
(TC=25°C)
100µs
Ciss
Coss
Crss
7
6
5
4
(A)
DR
I
3
2
1
0
0 0.5 1.0 1.5
20
10
5
(A)
D
0.5
I
0.1
0.05
10V
ID (pulse) MAX
(on) LIMITED
DS
R
4V
VSD (V)
1-circuit operation
VGS=0V
10ms (1shot)
(TC=25°C)
100µs
1ms
PT-Ta Characteristics
0.01
0.5 1 5 10 50 200100
40
35
30
25
20
(W)
T
P
15
10
Without Heatsink
5
0
0 50 100 150
VDS (V)
With Infinite Heatsink
Ta (°C)
With Silicone Grease
Natural Cooling
All Circuits Operating
0.01
0.5 1 5 10 50 200100
VDS (V)
0.01
0.5 1 5 10 50 200100
VDS (V)