Sanken Electric Co SLA5046 Datasheet

02134

0

0.2

0.1

0.3

0.4

0.5

5

ID (A)

R

DS (ON)

(mΩ)

67

(VGS=10V)

)

25

30

35

40

20

15

10

5

0

0 50 100 150

Ta (°C)

P

T

(W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

N-channel

SLA5046

Absolute maximum ratings

Symbol Ratings Unit

VDSS 200 V
VGSS ±20 V

ID ±7A

ID(pulse) ±15 (PW≤1ms, Du≤1%) A

EAS*55mJ

5

(Ta=25°C, with all circuits operating, without heatsink)

PT

35 (

Tc=25°C,with all circuits operating, with infinite heatsink

θ

j-a 25 (

θ

j-c 3.57 (

VISO 1000 (Between fin and lead pin, AC) Vrms

Tch 150 °C

Tstg –40 to +150 °C

* :

VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.

Junction-Air, Ta=25°C, with all circuits operating)°C/W

Junction-Case, Tc=25°C, with all circuits operating

General purpose

(Ta=25°C)

)W

) °C/W

Electrical characteristics

Symbol Unit Conditions

V(BR)DSS 200 V ID=100µA, VGS=0V

IGSS ±100 nA VGS=±20V
IDSS 100

VTH 2.0 4.0 V VDS=10V, ID=1mA

Re(yfs) 2.5 5.0 S VDS=10V, ID=3.5A

W

RDS(ON) 270 350 mΩ VGS=10V, ID=3.5A

Ciss 450 pF VDS=10V,

Coss 280 pF f=1.0MHz,

Crss 120 pF VGS=0V

td(on) 20 ns ID=3.5A,

tr 30 ns VD 100V,

td(off) 55 ns RL=28.6Ω, VGS=10V,

tf 75 ns see Fig. 3 on page 16.

VSD 1.0 1.5 V ISD=7A, VGS=0V

■Equivalent circuit diagram

3

5

7

2

4

6

8

9

11

10

trr 450 ns ISD=±100mA

Specification

min typ max

External dimensions

µ

AVDS=200V, VGS=0V

• • •

A

(Ta=25°C)

SLA

1

Characteristic curves

ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)

7

6

5

4

(A)

D

I

3

2

1

0

02 468

(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)

Re

10

5

Re (yfs) (S)

1

0.5

0.3

0.05 0.50.1

I

DR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics

7

6

5

74

4

IDR (A)

3

2

1

0

0 0.5 1.0 1.5

6V

10V

5.10V

5.5V

5V

4.5V

V

GS

=4V

VDS (V)

(VDS=10V)

=–40°C

c

°C

T

25

125°C

175

ID (A)

=0V

GS

V

VSD (V)

12

(

(V)

1ms

125°C

100µs

VDS=10V)

TC=–40°C

25°C

6

ID=3.5A
V

GS

=10V

100 150

(TC=25°C)

8

VGS=0V
f=1MH

2000

1000

500

100

50

Capacitance (pF)

10

5
3

02010 30

500

VDS (V

Z

Ciss

Coss

Crss

40 50

7

6

5

4

(A)

D

I

3

2

1

10

0

024

1.0

0.8

0.6

(mΩ)

DS (ON)

0.4

R

0.2

0

–40 0

20

10

5

R

DS (ON)

(A)

1

D

I

0.5

0.1

0.05

V

GS

TC (°C)

ID (pulse) max

10ms (1shot)

LIMITED

53 10 10050

VDS (V)

50