Sanken Electric Co SLA5041 Datasheet

25

30

35

40

20

15

10

5

0

0 50 100 150

Ta (°C)

PT (W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

N-channel

SLA5041

Absolute maximum ratings

General purpose

(Ta=25°C)

Symbol Ratings Unit

VDSS 200 V
VGSS ±20 V

ID ±10 A

ID(pulse) ±40 (PW≤1ms, Du≤1%) A

EAS* 120 mJ

5

PT

40 (

θ

j-a 25 (

θ

j-c 3.13 (

(Ta=25°C, with all circuits operating, without heatsink)

Tc=25°C,with all circuits operating, with infinite heatsink

Junction-Air, Ta=25°C, with all circuits operating)°C/W

Junction-Case, Tc=25°C, with all circuits operating

W

)W

) °C/W

VISO 1000 (Between fin and lead pin, AC) Vrms

Tch 150 °C

Tstg –40 to +150 °C

* :

VDD=25V, L=2.1mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.

■Equivalent circuit diagram

3

1

6

4

7

9

10

12

External dimensions

A

Electrical characteristics

Symbol Unit Conditions

V(BR)DSS 200 V ID=100µA, VGS=0V

IGSS ±100 nA VGS=±20V
IDSS 100

VTH 2.0 4.0 V VDS=10V, ID=1mA

Re(yfs) 5.0 8.5 S VDS=10V, ID=5A

RDS(ON) 130 175 mΩ VGS=10V, ID=5A

Ciss 850 pF VDS=10V, f=1.0MHz,
Coss 550 pF VGS=0V
td(on) 20 ns ID=5A,

tr 25 ns VDD 100V,

td(off) 70 ns RL=20Ω, VGS=10V,

tf 70 ns see Fig. 3 on page 16.

VSD 1.0 1.5 V ISD=10A, VGS=0V

trr 500 ns ISD=±100mA

Specification

min typ max

µ

AVDS=200V, VGS=0V

• • •

SLA

(Ta=25°C)

Characteristic curves

ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)

10

8

6

ID (A)

4

2

0

024

Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)

20

10

5

Re (yfs) (S)

1

0.5

0.3

0.05 0.1 0.5

IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics

10

8

(A)

DR

I

6

4

2

0

0 0.5 1.0 1.5

2

10V

5.5V

5

5V

6V

VDS (V)

=–40°C

C

T

ID (A)

=5.10V

GS

V

=0V

GS

V

VSD (V)

4.5V

V

6

=125

C

T

TC=25

1

8

=4V

GS

810

(VDS=10V)

°C

°C

510

11

10

8

6

(A)

D

I

4

2

0

02 4

400

300

(mΩ)

200

DS (ON)

R

100

0
–40

ID (pulse) max

50

10

DS (ON)

R

5

1

(A)

D

I

0.5

0.1

0.05

0.01

0.5 1 5 5010

VGS (V)

TC (°C)

LIMITED

VDS (V)

125°C

–40°C

10ms (1shot)

(VDS=10V)

25°C

6

ID=5A
V

(T

100µs

1ms

100 500

GS

=10V

C

=25°C)

ID (A)

(VGS=10V)

VGS=0V
f=1MHz

Ciss

Coss

Crss

200

150

(mΩ)

100

DS (ON)

R

50

8

150100500

0

02

3000

1000

500

100

Capacitance (pF)

50

10

010 50403020

41086

VDS (V)

71