Sanken Electric Co SLA5037 Datasheet

01020304050

50

100

500

5000

1000

VDS (V)

Capacitance (pF)

VGS=0V
f=1MHz

Ciss

Coss

Crss

N-channel

25

30

35

40

20

15

10

5

0

0 50 100 150

Ta (°C)

P

T

(W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

SLA5037

Absolute maximum ratings Electrical characteristics

Symbol Ratings Unit

VDSS 100 V
VGSS ±20 V

ID ±10 A

ID(pulse) ±40 (PW≤1ms) A

EAS* 200 mJ

5

(Ta=25°C, with all circuits operating, without heatsink)

PT

40 (Tc=25°C,

θ

j-a 25 (

θ

j-c 3.13

VISO 1000 (Between fin and lead pin, AC) Vrms

Tch 150 °C

Tstg –40 to +150 °C

* :

VDD=25V, L=3mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15.

with all circuits operating, with infinite heatsink

Junction-Air, Ta=25°C, with all circuits operating)°C/W

(Junction-Case, Tc=25°C, with all circuits operating)

General purpose

(Ta=25°C)

Symbol Unit Conditions

V(BR)DSS 100 V ID=100µA, VGS=0V

IGSS ±100 nA VGS=±20V
IDSS 100

VTH 1.0 2.0 V VDS=10V, ID=250µA

Re(yfs) 813 S VDS=10V, ID=5A

)

W
W

°C/W

RDS(ON)

Ciss 1630 pF VDS=10V, f=1.0MHz,
Coss 480 pF VGS=0V
td(on) 30 ns ID=5A,

tr 45 ns V DD 50V,

td(off) 100 ns RL=10Ω, VGS=5V

tf 40 ns see Fig. 3 on page 16.

Specifications

min typ max

60 80 mΩ VGS=10V, ID=5A
75 95 mΩ VGS=4V, ID=5A

VSD 1.1 1.5 V ISD=10A, VGS=0V

■Equivalent circuit diagram

3

1

6

4

9

7

10

12

trr 300 ns ISD=±100mA

External dimensions

µ

AVDS=100V, VGS=0V

A

(Ta=25°C)

• • •

SLA

,

2

Characteristic curves

ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)

10

3V

8

6

ID (A)

4

2

0

010

(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)

Re

30

10

5

Re (yfs) (S)

1

0.5

0.3

0.1 0.5 1

0.05

I

DR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics

10

8

68

6

(A)

DR

I

4

2

0

0 0.5 1.0 1.5

5

4V
10V

2468

VDS (V)

TC=–40°C

25°C

125°C

ID (A)

5V

VSD (V)

=0V

GS

V

8

2.8V

2.6V

2.4V

2.2V

VGS=2V

(VDS=10V)

11

VGS=4V

10ms (1shot)

(VDS=10V)

(I

D

GS

=10V

V

(TC=25°C)

1ms

=5A)

100µs

100

80

60

(mΩ)

40

DS (ON)

R

20

0

0

2468

150

ID (A)

VGS=4V

V

GS

=10V

10

10

8

6

ID (A)

4

2

0

01234

150

100

(mΩ)

DS (ON)

R

50

–

105

4000 50 100

50

10

5

(A)

D

I

1

0.5

0.5 1 5 10 50 100

ID (pulse) max

DS (ON)

R

T

C=–40°C

25°C

125°C

LIMITED

VGS (V)

TC (°C)

VDS (V)