Sanken Electric Co SLA5031 Datasheet
SLA5031
001710
0.1
0.2
0.3
ID (A)
R
DS (ON)
(Ω)
2345 6 89
4V
V
GS
=10V
25
30
35
40
20
15
10
5
0
0 50 100 150
Ta (°C)
PT (W)
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
Without Heatsink
N-channel
With built-in flywheel diode
External dimensions
A
• • •
SLA
Absolute maximum ratings
(Ta=25°C)
Symbol Ratings Unit
VDSS 60 V
VGSS ±10 V
ID ±5A
ID(pulse) ±10 (PW≤1ms) A
EAS*2mJ
Electrical characteristics
Symbol Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±10V
IDSS 250
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 3.1 4.6 S VDS=10V, ID=5A
IF5 (PW≤0.5ms, Du≤25%) A
IFSM 10 (PW≤10ms, Single pulse) A
VR 120 V
5
(Ta=25°C, with all circuits operating, without heatsink)
PT
35 (
θ
j-a 25 (
θ
j-c 3.57 (
Tc=25°C,with all circuits operating, with infinite heatsink
Junction-Air, Ta=25°C, with all circuits operating)°C/W
Junction-Case, Tc=25°C, with all circuits operating
)W
) °C/W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=1.7A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
2
463
9
1110
W
RDS(ON)
Ciss 400 pF VDS=25V, f=1.0MHz,
Coss 160 pF VGS=0V
ton 80 ns ID=5A, VDD 30V,
toff 50 ns
VSD 1.1 1.5 V ISD=5A, VGS=0V
trr 150 ns ISD=±100mA
●Diode for flyback voltage absorption
Symbol Unit Conditions
VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
IR 10
1
5
8
12
trr 100 ns IF=±100mA
Specification
min typ max
0.17 0.22 Ω VGS=10V, ID=2.5A
0.25 0.30 Ω VGS=4V, ID=2.5A
Speciication
min typ max
(Ta=25°C)
µ
AVDS=60V, VGS=0V
see Fig. 3 on page 16.
µ
AVR=120V
VGS=5V,
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
10
10V
8
6
(A)
D
I
4
2
0
02 10
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
10
5
Re (yfs) (S)
1
0.5
0.3
0.05 0.5 1
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
10
8
6
(A)
DR
I
4
2
0
0 1.0 1.5
0.1
10V
0.5
468
VDS (V)
=–40°C
C
T
ID (A)
4V
VSD (V)
125°C
V
25°C
GS
=0V
7
4V
3.5V
VGS=3V
(VDS=10V)
510
10
8
6
(A)
D
I
4
TC=–40°C
25°C
125°C
2
0
01234
0.4
0.3
(Ω)
0.2
DS (ON)
R
0.1
–4000 50 100
20
ID (pulse) max
10
5
DS (ON)
R
(A)
D
I
1
0.5
0.1
0.5
VGS (V)
TC (°C)
LIMITED
1 5 10 50 100
10ms (1shot)
VDS (V)
(VDS=10V)
(ID=2.5A)
4V
GS
=10V
V
(TC=25°C)
100µs
1ms
5
VGS=0V
1000
500
100
50
Capacitance (pF)
150
10
01020304050
VDS (V)
f=1MHz
Ciss
Coss
Crss
67
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