Sanken Electric Co SLA5027 Datasheet

MOS FET Array SLA5027

Absolute Maximum Ratings

(Ta=25ºC) (Ta=25ºC)

Symbol Ratings Unit

* *

1 P 2 V

V

DSS

V

GSS

I

D

I

D (pulse)

P

T

EAS*

j-c

V

ISO

T

ch

Tstg

W DD

■

I

D

(A)

D

I

1

*

2

250µs, duty 1% 30V, L

=

—

V

10

8

6

4

2

60

±20 ±12 ±48

5 (Ta=25ºC, 4 circuits operate)

60 (Tc=25ºC,4 circuits operate)

250

2.08

(Fin to lead terminal) AC1000

150

–55 to +150

10mH, unclamped, R

=

Characteristics

DS

4V

5V

10V

W W

mJ

ºC/W

Vrms

ºC ºC

=

G

Electrical Characteristics

V V A A

50Ω

Symbol Test Conditions

V

(BR) DSSID

I

GSS

I

DSS

V

TH

R

e

(

yfs)

R

DS (ON)

Ciss Coss Crss t

d (on)

t

r

t

d (off)

t

f

V

SD

V

=

3V

GS

V V

I

■

=

DS DS

V V

SD

100µA, V

V

GS

60V, V

=

10V, I

=

10V, I

=

DS

4V, I

=

GS

V

DS

1.0MHz

f

=

V

GS

I

D

V

DD

R

=

L

V

GS

R

G

10A, V

=

—

I

D

12

10

8

6

(A)

D

I

4

2

0V

=

GS

20V

= ±

0V

=

GS

1mA 2.01.5

=

D

8A 6.0

=

D

8A

=

D

10V

=

0V

=

8A

=

30V

3.75Ω

5V

=

50Ω

=

0V

=

GS

Characteristics

V

GS

V

DS

T

a

Ratings

min typ max

60

1.0

12.0

0.07 0.08

1100

500 170 50 250 250 180

1.0 1.5

=

10V

=

150ºC

75ºC 25ºC

–55ºC

±100

100

Unit

V

µA µA

V S

Ω

pF pF pF ns ns ns ns

V

External Dimensions

±0.15

3.2

±0.2

±0.2

a

±0.2

16.0

13.0

9.9

b

8.5max

2.7 Pin 1

9.5min (10.4)

±0.15

1.2

11•P2.54

12 3

4 5 6 7 8 9 10 1112

■

—

R

(on)

DS

0.1

I

D

SLA (LF800)

±0.2

31.0

±0.2

24.4

±0.2

16.4

12

+0.2 –0.1

0.85

±0.15

1.45

±

0.7

±

1.0

=

27.94

31.5max

Characteristics

(Ω)

0.05

DS (on)

R

±0.15

Ellipse 3.2

0.8max

Lead plate thickness

resins

+0.2 –0.1

0.55

a) Type No. b) Lot No.

(Unit: mm)

V

=

4V

GS

V

=

10V

GS

• 3. 8

±0.2

4.8

±0.1

1.7

±0.7

2.2

82

0

0123456

VDS (V)

—

■

R

(on)

DS

0.12

0.10

(Ω)

(on)

DS

0.06

R

0.02 –50 0 50 100 150

Characteristics

T

C

Tc (ºC)

Capacitance —

■

2000

1000

500

Characteristics

V

DS

V f

GS

=

=

1MHz

Capacitance (pF)

100

50

1 5 10 50

VDS (V)

0

01234

VGS (V)

—

■

R

e (yfs)

30

V

=

4V

GS

10

V

=

10V

GS

(S)

(yfs)

e R

5

2

0.4 1 5 10 20

Characteristics

I

D

V

=

10V

DS

ID (A)

Safe Operating Area (single pulse)

■

50

I

max

D

0V

Ciss

Coss

Crss

(pulse)

D

E

IT

IM

= 4V line

S

L

G

(on)

S

D

R

Assumed V

I

max

D (DC)

10

5

(A)

D

I

1

0.5

0.5 1 5 10 10050

100ms

10ms

1ms

(Ta

0.5ms

= 25ºC)

0

0.1 1 10 20

ID (A)

—

■

I

DR

(A)

DR

I

Characteristics

V

SD

20

V

=

0V

GS

10

5

1

0.5

0.1 0 0.4 0.8 1.2

VSD (V)

Equivalent Circuit Diagram

3

1

2

6

4

5

7

8

11

9

10

12

VDS (V)

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