Sanken Electric Co SLA5026 Datasheet

SLA5026

)

25

30

35

40

20

15

10

5

0

0 50 100 150

Ta (°C)

P

T

(W)

With Silicone Grease
Natural Cooling
All Circuits Operating

With Infinite Heatsink

Without Heatsink

N-channel
General purpose

External dimensions

A

• • •

SLA

Absolute maximum ratings

(Ta=25°C)

Symbol Ratings Unit

VDSS 100 V
VGSS ±20 V

ID ±10 A

ID(pulse) ±40 (PW≤1ms) A

EAS*70mJ

5

(Ta=25°C, with all circuits operating, without heatsink)

PT

35 (

θ

j-a 25 (

θ

j-c 3.57 (

Tc=25°C,with all circuits operating, with infinite heatsink

Junction-Air, Ta=25°C, with all circuits operating)°C/W

Junction-Case, Tc=25°C, with all circuits operating

)W

) °C/W

VISO 1000 (Between fin and lead pin, AC) Vrms

Tch 150 °C

Tstg –40 to +150 °C

* :

VDD=25V, L=4.2mH, ID=5A, unclamped, RG=50Ω, see Fig. E on page 15.

Electrical characteristics

Symbol Unit Conditions

V(BR)DSS 100 V ID=100µA, VGS=0V

IGSS ±100 nA VGS=±20V
IDSS 100

VTH 1.0 2.0 V VDS=10V, ID=250µA

Re(yfs) 710 S VDS=10V, ID=5A

W

RDS(ON)

Ciss 740 pF VDS=10V, f=1.0MHz,
Coss 240 pF VGS=0V
td(on) 20 ns ID=5A,

tr 45 ns VDD 50V,

td(off) 60 ns RL=10Ω, VGS=5V,

tf 20 ns see Fig. 3 on page 16.

VSD 1.0 1.4 V ISD=10A, VGS=0V

■Equivalent circuit diagram

3

1

2

6

4

9

5

7

10

12

8

11

trr 180 ns ISD=±100mA

Specification

min typ max

110 175 mΩ VGS=10V, ID=5A
140 220 mΩ VGS=4V, ID=5A

(Ta=25°C)

µ

AVDS=100V, VGS=0V

Characteristic curves

ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)

10

8

6

(A)

D

I

4

2

0

024

Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)

20

10

5

Re (yfs) (S)

1

0.5

0.3

0.05 0.50.1

IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics

10

8

6

(A)

DR

I

4

2

0

0 0.5 1.0 1.5

50

TC (°C)

VDS (V)

TC=–40°C
T

C

=25°C

T

C

=125°C

3

=4V

GS

V

100 150

10ms (1shot)

(VDS=10V)

45

(ID=5A)

10V

(TC=25°C)

100µs

100ms

100

10

10V

4V

3V

2.8V

2.6V

2.4V

6

VDS (V)

ID (A)

=0V

GS

V

VSD (V)

810

(VDS=10V)

=–40°C

C

T

°C

25

125°C

1105

5V

8

6

(A)

D

I

4

2

0

012

300

250

200

(mΩ)

150

DS (ON)

R

100

50

0
–40 0

ID (pulse) max

50

10

LIMITED

DS (ON)

5

R

(A)

D

I

1

0.5

0.1

0.5 1 5 5010

VGS (V)

200

150

(mΩ)

100

DS (ON)

R

50

0

024

2000

1000

500

100

Capacitance (pF)

50

20

02010 30

VGS=4V

VGS=10V

ID (A

VDS (V)

6

810

VGS=0V
f=1MHz

Ciss

Coss

Crss

50

40

65