Sanken Electric Co SLA5023 Datasheet
01020304050
5
50
100
700
Ciss
Coss
Crss
VDS (V)
Capacitance (pF)
500
10
VGS=0V
f=1MHz
PNP Darlington + N-channel MOSFET
0.1 10.5 105 10050
1000500 100005000
PW (mS)
20
10
5
1
0.5
0.2
θ
ch-c
(°C / W)
SLA5023
Absolute maximum ratings
Symbol Ratings Unit
VM 100 V
IO ±6 (PW≤100ms) A
IOP ±8 (PW≤1ms) A
VGSS ±10 V
IB –0.5 A
R2
5 (Ta=25°C)
35 (Tc=25°C)
8
3
OUT1
6
1
VM
9
7
OUT2
11
PT W
θ
j-a 25 °C/W
θ
j-c 3.57 °C/W
VISO
1000 (Between fin and lead pin, AC)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
R1
2
4
3-phase motor drive
(Ta=25°C)
Vrms
10
OUT3
Electrical characteristics (Sink: N-channel MOSFET)
Symbol Unit Conditions
V(BR)DSS 100 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±10V
IDSS 250
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 1.1 1.7 S VDS=10V, ID=4A
RDS(ON) Ω
Ciss 230 pF VDS=25V, f=1.0MHz,
Coss 60 pF VGS=0V
ton 60 ns ID=4A, VDD=50V,
toff 50 ns VGS=10V
VSD 1.2 2.0 V ISD=4A, VGS=0V
trr 250 ns IF=±100mA
Specification
min typ max
0.47 0.55 VGS=10V, ID=2A
0.60 0.78 VGS=4V, ID=2A
External dimensions
µ
AVDS=100V, VGS=0V
A
• • •
SLA
(Ta=25°C)
R1: 3kΩ typ R2: 80Ω typ
Characteristic curves (N-channel)
VDS-ID Characteristics (Typical) VGS-ID Temperature Characteristics (Typical) IDS-RDS(ON) Characteristics (Typical)
8
7
6
5
(A)
4
D
I
3
2
1
0
02 10
ID-Re(yfs) Temperature Characteristics (Typical) TC-RDS(ON) Characteristics (Typical) VDS-Cpacitance Characteristics (Typical)
7
5
1
Re (yfs) (S)
0.5
0.3
0.1
0.05 0.5 1
SD-IDR Characteristics (Typical) Safe Operating Area (SOA)
V
8
7
6
62
5
(A)
4
DR
I
3
2
1
0
0 1.0 1.5
10V
468
VDS (V)
VDS=10V
=40°C
C
T
125°C
ID (A)
4V
10V
=0V
GS
V
0.5
VSD (V)
5 12
4.5V
4V
3.5V
VGS=3V
25°C
58
8
7
6
5
4
(A)
D
I
3
2
1
0
02468
1.2
1.0
0.8
(Ω)
0.6
DS (ON)
R
0.4
0.2
–4000 50 100
10
5
1
(A)
D
I
0.5
0.1
0.5
VDS=10V
125°C
=–40°C
C
T
25°C
VGS (V)
(ID=2A)
=4V
GS
V
=10V
GS
V
TC (°C)
(Tc=25°C)
I (pulse) max
D
LIMITED
DS (ON)
R
1 5 10 50 100
VDS (V)
10ms (1shot)
100µs
1ms
0.8
0.6
(Ω)
0.4
DS (ON)
R
0.2
150
VGS=4V
00123
θ
ch-c-PW Characteristics
45678
ID (A)
VGS=10V
SLA5023
–8
–6
–4
–2
0
0–1 –2 –3
T
a
=125°C
–30°C
75°C
25°C
(VCE=–4V)
I
C
(A)
VBE (V)
)
Electrical characteristics (Source: PNP transistor)
Symbol Unit Conditions
ICBO –10
IEBO –10 mA VEB=–6V
VCEO –100 V IC=–10mA
hFE 2000 5000 12000 VCE=–4V, IC=–3A
VCE(sat) –1.5 V
VBE(sat) –2.2 V
VFEC 1.3 V IFEC=–1A
trr 2.0
ton 0.6
tstg 1.6
tf 0.5
fT 90 MHz VCE=–12V, IE=1A
Cob 100 pF VCB=–10V, f=1MHz
Specification
min typ max
µ
AVCB=–100V
IC=–3A, IB=–6mA
µ
sIF=±100mA
µ
sVCC –30V
µ
sIC=–3A
µ
sIB1=–IB2=–6mA
(Ta=25°C)
Characteristic curves (PNP)
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
–8
–7
–6
–5
(A)
–4
C
I
–3
–2
–1
0
0–1–2–3–4–5
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
–3
–2
(sat) (V)
CE
V
–1
–0.3 –0.5
θch-c (°C / W)
0.5
T
25°C
75°C
125°C
0
θ
j-a-PW Characteristics Safe Operating Area (SOA) PT-Ta Characteristics
20
10
5
1
1 5 10 50 100 500 1000
IB=–4mA
–2mA
–1.2mA
–0.8mA
–0.6mA
–0.4mA
VCE (V)
(IC / IB=1000)
=–30°C
a
–1 –5 –10
IC (A)
PW (mS
20000
10000
5000
1000
FE
h
500
100
50
30
–0.03 –0.1 –0.5 –1 –5
–3
–2
(sat) (V)
CE
V
–1
0
–0.2 –0.5
–10
–5
–1
(A)
–0.5
C
I
–0.1
–0.05
–0.03
–0.05
Single Pulse
Without Heatsink
Ta=25°C
–5
IC (A)
IC=–3A
IC=–1A
–1 –5 –10 –50 –100 –500
IB (mA)
10ms
VCE (V)
(VCE=–4V)
IC=–5A
1ms
20000
typ
–8
100µs
–100–50–10–3
10000
5000
=125°C
a
75°C
1000
FE
h
500
100
50
30
–0.03 –0.1
40
35
30
25
20
(W)
T
P
15
10
5
0
0 50 100 150
T
–0.05
With Infinite Heatsink
Without Heatsink
Ta (°C)
(VCE=–4V)
25°C
–30°C
–0.5 –1 –5 –8
I
C
(A)
With Silicone Grease
Natural Cooling
All Circuits Operating
63
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