Sanken Electric Co SLA5022 Datasheet
PNP Darlington + N-channel MOSFET
SLA5022
Absolute maximum ratings
Symbol Ratings Unit
VM 60 V
IO ±6 (PW≤100ms) A
IOP ±10 (PW≤1ms) A
VGSS ±10 V
IB –0.5 A
R2
5 (Ta=25°C)
35 (Tc=25°C)
8
3
OUT1
6
1
VM
9
7
OUT2
OUT3
11
PT W
θ
j-a 25 °C/W
θ
j-c 3.57 °C/W
VISO
1000 (Between fin and lead pin, AC)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
R1
2
4
3-phase motor drive
(Ta=25°C)
Vrms
10
Electrical characteristics (Sink : N channel MOSFET)
Symbol Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±10V
IDSS 250
VTH 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 3.1 4.6 S VDS=10V, ID=4A
RDS(ON)
Ciss 400 pF VDS=25V, f=1.0MHz,
Coss 160 pF VGS=0V
ton 80 ns ID=4A, VDD=30V,
toff 50 ns VGS=5V
VSD 1.1 1.5 V ISD=4A, VGS=0V
trr 150 ns IF=±100mA
Specification
min typ max
0.17 0.22 VGS=10V, ID=4A
0.25 0.30 VGS=4V, ID=4A
External dimensions
µ
AVDS=60V, VGS=0V
W
A
• • •
SLA
(Ta=25°C)
R1: 3kΩ typ R2: 80Ω typ
5 12
Characteristic curves (N-channel)
VDS-ID Characteristics (Typical) VGS-ID Temperature Characteristics (Typical) IDS-RDS(ON) Characteristics (Typical)
10ms (1shot)
(VDS=10V)
(ID=2.5A)
4V
VGS=10V
(TC=25°C)
100µs
1ms
0.3
0.2
(Ω)
DS (ON)
R
0.1
5
150
001710
1000
500
100
50
Capacitance (pF)
10
01020304050
4V
VGS=10V
23456 89
ID (A)
VGS=0V
f=1MHz
Ciss
Coss
Crss
VDS (V)
10
10V
8
6
(A)
D
I
4
2
0
02 10
468
VDS (V)
4V
3.5V
VGS=3V
10
8
6
(A)
D
I
4
TC=–40°C
2
0
25°C
125°C
01234
VGS (V)
ID-Re(yfs) Temperature Characteristics (Typical) TC-RDS(ON) Characteristics (Typical) VDS-Cpacitance Characteristics (Typical)
10
5
Re (yfs) (S)
1
0.5
0.3
0.05 0.5 1
SD-IDR Characteristics (Typical) Safe Operating Area (SOA)
V
10
8
6
(A)
DR
I
4
2
0
0 1.0 1.5
VDS=10V
=–40°C
C
T
125°C
25°C
0.1
ID (A)
10V
4V
0.5
VSD (V)
510
VGS=0V
0.4
0.3
0.2
RDS (ON) (Ω)
0.1
–4000 50 100
20
ID (pulse) max
10
5
DS (ON)
R
(A)
D
I
1
0.5
0.1
0.5
TC (°C)
LIMITED
1 5 10 50 100
VDS (V)
60
SLA5022
25
30
35
40
20
15
10
5
0
0 50 100 150
Ta (°C)
P
T
(W)
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
Without Heatsink
Electrical characteristics (Source: PNP transistor)
Symbol Unit Conditions
ICBO –10
IEBO –1 –5 mA VEB=–6V
VCEO –60 V IC=–25mA
hFE 2000 5000 12000 VCE=–4V, IC=–4A
VCE(sat) –1.5 V
VBE(sat) –2.0 V
VFEC 2.0 V IFEC=4A
trr 1.0
ton 1.0
tstg 1.4
tf 0.6
fT 120 MHz VCE=–12V, IE=1A
Cob 150 pF VCB=–10V, f=1MHz
Specification
min typ max
µ
AVCB=–60V
IC=–4A, IB=–10mA
µ
sIF=±0.5A
µ
sVCC –25V,
µ
sIC=–4A,
µ
sIB1=–IB2=–10mA
(Ta=25°C)
Characteristic curves (PNP)
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
–12
–10
–8
(A)
–6
C
I
–4
–2
0
0–2–4–6
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
–3
–2
(sat) (V)
CE
V
–1
0
–0.1 –0.5
20
10
5
(°C / W)
ch-c
θ
1
0.5
1 5 10 50 100 500 1000
IC (A)
IC=–2A
(VCE=–4V)
typ
IC=–8A
IC=–4A
100µs
1ms
–100–50–10–3
20000
10000
5000
FE
h
=125°C
a
75°C
T
1000
500
200
–12
–10
(A)
C
I
25°C
–30°C
–0.1 –0.5 –1 –5
–8
–6
–4
–2
0
0–1–2–3
=125°C
a
T
75°C
VBE (V)
IC (A)
25°C
–30°C
I
B
=–10mA
–5mA
–3mA
–2mA
–1mA
–0.5mA
VCE (V)
(IC / IB=1000)
=–30°C
a
T
25°C
75°C
125°C
–1 –5 –10
IC (A)
θ
j-a-PW Characteristics Safe Operating Area (SOA) PT-Ta Characteristics
–20
PW (mS)
20000
10000
5000
hFE
1000
500
200
–0.1 –0.5 –1 –5 –10
–3
–2
(sat) (V)
CE
V
–1
0
–0.3 –0.5
–1 –5 –10 –50 –100 –200
IB (mA)
–20
(A)
C
I
–0.5
–0.1
–10
–5
–1
Single Pulse
Without Heatsink
Ta=25°C
10ms
–5
VCE (V)
(VCE=–4V)
–10
(VCE=–4V)
61
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