Sanken Electric Co SLA5018 Datasheet
6
0
8
10
01234
I
D
(A)
VGS (V)
5
4
2
(VDS=10V)
25°C
125°C
TC=–40°C
N-channel + P-channel
SLA5018
Absolute maximum ratings
Symbol Unit
N channel P channel
H-bridge
Ratings
External dimensions
(Ta=25°C)
VDSS 60 –60 V
VGSS ±10 20 V
ID ±5 4A
ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A
EAS*2 —mJ
PT
θ
j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ
j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
Pch
Nch
10
12
11
2
1
7
8
9
4
5
6
3
A
• • •
SLA
Characteristic curves
10
N-ch P-ch N-ch
10V
8
6
(A)
D
I
4
2
0
02 10
0.3
0.2
(Ω)
DS (ON)
R
0.1
001710
0.4
468
VDS (V)
N-ch P-ch P-ch
4V
23456 89
ID (A)
N-ch P-ch
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical)
4V
3.5V
VGS=3V
DS(ON)-ID Characteristics (Typical)
R
V
GS
=10V
RDS(ON)-TC Characteristics (Typical)
(ID=2.5A)
–8
–10V
–6
–4
(A)
D
I
–2
–0
0 –2 –10
0.6
0.5
0.4
(Ω)
0.3
DS (ON)
R
0.2
0.1
00–2
0.8
–4 –6 –8
V
VDS (V)
(VGS=–10V)
–4 –6 –8
ID (A)
ID=–2A
V
–7V
–6V
–5V
GS
=–4V
TC=–40°C
25°C
125°C
VGS (V)
(VDS=–10V)
GS
=–10V
–8
–6
–4
(A)
D
I
–2
–0
0 –2 –10–4 –6 –8
0.3
0.2
RDS (ON) (Ω)
0.1
–4000 50 100
56
4V
GS
=10V
V
TC (°C)
150
0.6
(Ω)
0.4
DS (ON)
R
0.2
–4000 50 100
TC (°C)
150
SLA5018
–0.5
–0.1
–1 –5 –10 –50 –100
–1
–5
–10
I
D
(A)
VDS (V)
–0.5
(TC=25°C)
ID (pulse) max
1ms
10ms (1shot)
R
DS (ON)
LIMITED
100µs
Electrical characteristics
N channel P channel
Symbol Specification
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V –60 V ID=–250µA, VGS=0V
IGSS ±500 nA VGS=±10V 500 nA VGS= 20V
IDSS 250
µ
AVDS=60V, VGS=0V –250
VTH 1.0 2.0 V VDS=10V, ID=250µA –2.0 –4.0 V
Re(yfs) 3.1 4.6 S VDS=10V, ID=5A 1.6 2.2 S VDS=–10V, ID=–4A
RDS(ON)
0.17 0.22 Ω VGS=10V, ID=2.5A
0.25 0.30 Ω VGS=4V, ID=2.5A
Ciss 400 pF VDS=25V, f=1.0MHz, 270 pF
Coss 160 pF VGS=0V 170 pF VGS=0V
ton 80 ns
toff 50 ns
ID=5A, VDD30V, VGS=5V,
see Fig. 3 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V –4.4 –5.5 V ISD=–4A, VGS=0V
trr 150 ns ISD=±100mA 150 ns ISD= 100mA
Specification
Unit Conditions
µ
AVDS=–60V, VGS=0V
VDS=–10V, ID=–250µA
0.38 0.55 Ω VGS=–10V, ID=–2A
VDS=–25V, f=1.0MHz,
60 ns
60 ns
ID=–4A, VDD–30V, VGS=–10V,
see Fig. 4 on page 16.
(Ta=25°C)
Characteristic curves
10
5
Re (yfs) (S)
1
0.5
0.3
0.05 0.5 1
0.1
1000
500
100
50
Capacitance (pF)
10
01020304050
10
8
6
(A)
DR
10V
I
4
2
0
0 1.0 1.5
4V
0.5
N-ch P-ch N-ch
N-ch P-ch P-ch
VDS (V)
(VDS=10V)
=–40°C
C
T
125°C
25°C
ID (A)
510
Capacitance-VDS Characteristics (Typical)
VGS=0V
f=1MHz
Ciss
Coss
Crss
5
1
Re (yfs) (S)
0.5
0.3
–0.1
700
500
100
50
Capacitance (pF)
10
0 –10 –20 –30 –40 –50
–0.5 –1
C
T
ID (A)
VDS (V)
=–40°C
25°C
125°C
(VDS=–10V)
–5 –8
VGS=0V
f=1MHz
Ciss
Coss
Crss
20
ID (pulse) max
10
5
LIMITED
DS (ON)
R
(A)
D
I
1
0.5
0.1
0.5
1 5 10 50 100
VDS (V)
IDR-VSD Characteristics (Typical) PT-Ta Characteristics
Re(yfs)-ID Characteristics (Typical) Safe Operating Area (SOA)
N-ch P-ch
GS
=0V
V
VSD (V)
–8
–6
(A)
DR
I
–10V
–4
–1
–5V
GS
=0V
V
–2 –4
VSD (V)
–2
0
0–3–5
40
35
30
25
20
(W)
T
P
15
10
Without Heatsink
5
0
0 50 100 150
With Infinite Heatsink
Ta (°C)
(TC=25°C)
1ms
10ms (1shot)
With Silicone Grease
Natural Cooling
All Circuits Operating
100µs
57
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