Sanken Electric Co SLA5015 Datasheet
0 –10 –20 –30 –40 –50
50
100
700
VDS (V)
Capacitance (pF)
500
10
VGS=0V
f=1MHz
Ciss
Coss
Crss
25
30
35
40
20
15
10
5
0
0 50 100 150
Ta (°C)
P
T
(W)
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
Without Heatsink
P-channel
SLA5015
Absolute maximum ratings
Symbol Ratings Unit
VDSS –60 V
VGSS 20 V
ID 4A
ID(pulse) 8 (PW≤1ms) A
5
(Ta=25°C, with all circuits operating, without heatsink)
PT
35 (
Tc=25°C,with all circuits operating, with infinite heatsink
θ
j-a 25 (
θ
j-c 3.57 (
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
Junction-Air, Ta=25°C, with all circuits operating)°C/W
Junction-Case, Tc=25°C, with all circuits operating
1
2
4
6
10
8
General purpose
(Ta=25°C)
)W
) °C/W
12
Electrical characteristics
W
Symbol Unit Conditions
V(BR)DSS –60 V ID=–250µA, VGS=0V
IGSS 500 nA VGS= 20V
IDSS –250
VTH –2.0 –4.0 V
Re(yfs) 1.6 2.2 S VDS=–10V, ID=–4A
RDS(ON) 0.38 0.55 Ω VGS=–10V, ID=–4A
Ciss 270 pF VDS=–25V, f=1.0MHz,
Coss 170 pF VGS=0V
ton 60 ns
toff 60 ns
VSD –4.5 –5.5 V ISD=–4A
trr 150 ns ISD= 100mA
Specification
min typ max
External dimensions
µ
AVDS=–60V, VGS=0V
VDS=–10V, ID=–250µA
ID=–4A, VDD–30V, VGS=–10V,
see Fig. 4 on page 16.
A
• • •
SLA
(Ta=25°C)
3
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
–8
–6
–4
(A)
D
I
–2
–0
0 –2 –10
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
5
1
Re (yfs) (S)
0.5
0.3
–0.1
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
–8
–6
52
(A)
–4
DR
I
–2
0
0–3–5
–1
5
–10V
–4 –6 –8
VDS (V)
–0.5 –1
ID (A)
–10V
–5V
–2 –4
VSD (V)
7
–7V
–6V
–5V
V
GS
=–4V
(VDS=–10V)
=–40°C
C
T
25°C
125°C
–5 ---8
=0V
GS
V
11
9
–8
–6
(A)
–4
D
I
–2
–0
0 –2 –10–4 –6 –8
1.0
0.8
0.6
(Ω)
DS (ON)
0.4
R
0.2
–4000 50 100
–10
ID (pulse) max
–5
–1
ID (A)
–0.5
–0.1
–0.5
VGS (V)
TC (°C)
LIMITED
DS (ON)
R
–1 –5 –10 –50 –100
VDS (V)
25°C
(VDS=–10V)
=–40°C
C
T
ID=–4A
V
GS
=–10V
(TC=25°C)
1ms
10ms (1shot)
0.6
125°C
150
100µs
0.5
0.4
0.3
RDS (ON) (Ω)
0.2
0.1
00–2
(VGS=–10V)
–4 –6 –8
ID (A)
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