SLA5007
N-channel + P-channel
H-bridge
External dimensions
A
• • •
SLA
Absolute maximum ratings
Symbol Unit
N channel P channel
Ratigs
(Ta=25°C)
VDSS 60 –60 V
VGSS ±20 20 V
ID ±5 4A
ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A
EAS*2 —mJ
PT
θ
j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ
j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
5 (Ta=25°C, with all circuits operating, without heatsink) W
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
10
7
Pch
Nch
12
11
2
1
3
8
9
4
5
6
Characteristic curves
10
10V
8
6
(A)
D
I
4
2
0
0
0.20
0.15
0.10
RDS (ON) (Ω)
0.05
0024 10
0.3
N-ch P-ch N-ch
VGS=4V
468
210
VDS (V)
N-ch P-ch P-ch
N-ch P-ch
68
ID (A)
(VGS=10V)
I
D
V
GS
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical)
TC=–40°C
25°C
125°C
(VDS=10V)
6
(VDS=–10V)
7V
6V
5V
DS(ON)-ID Characteristics (Typical)
R
--- 8
--- 6
--- 4
(A)
D
I
--- 2
--- 0
0.6
0.5
0.4
0.3
RDS (ON) (Ω)
0.2
0.1
–10V
–7V
–6V
–5V
V
GS
0 ---2 ---1 0
00--- 2
--- 4 ---6 ---8
VDS (V)
--- 4 --- 6 --- 8
ID (A)
=–4V
(VGS=–10V)
10
8
6
ID (A)
4
TC=–40°C
25°C
125°C
2
0
024 8
--- 8
--- 6
--- 4
(A)
D
I
--- 2
--- 0
0 ---2 ---1 0--- 4 --- 6 --- 8
VGS (V)
VGS (V)
RDS(ON)-TC Characteristics (Typical)
=5A
=10V
1.0
ID=–4A
V
GS
=–10V
40
0.2
(Ω)
DS (ON)
R
0.1
--- 4000 50 100
TC (°C)
0.8
0.6
(Ω)
DS (ON)
0.4
R
0.2
150
--- 4000 50 100
TC (°C)
150
SLA5007
0.5
0.1
1 5 10 50 100
0.5
1
5
10
20
I
D
(A)
VDS (V)
(TC=25°C)
ID (pulse) max
1ms
LIMITED
10ms (1shot)
R
DS (ON)
100µs
Electrical characteristics
N channel P channel
Symbol Specification
min typ max min typ max
Unit Conditions
V(BR)DSS 60 V ID=250µA, VGS=0V –60 V
IGSS ±500 nA VGS=±20V 500 nA VGS= 20V
IDSS 250
µ
AVDS=60V, VGS=0V –250
VTH 2.0 4.0 V VDS=10V, ID=250µA –2.0 –4.0 V
Re(yfs) 2.2 3.3 S VDS=10V, ID=5A 1.6 2.2 S VDS=–10V, ID=–4A
RDS(ON) 0.17 0.22 Ω VGS=10V, ID=5A 0.38 0.55 Ω VGS=–10V, ID=–4A
Ciss 300 pF VDS=25V, f=1.0MHz, 270 pF
Coss 160 pF VGS=0V 170 pF VGS=0V
ton 35 ns
toff 35 ns
ID=5A, VDD30V,VGS=10V
see Fig. 3 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V –4.4 –5.5 V ISD=–4A, VGS=0V
trr 140 ns ISD=±100mA 150 ns ISD= 100mA
Specification
60 ns
60 ns
Unit Conditions
ID=–250µA, VGS=0V
µ
AVDS=–60V, VGS=0V
VDS=–10V, ID=–250µA
VDS=–25V, f=1.0MHz,
ID=–4A, VDD–30V,VGS=10V,
see Fig. 4 on page 16.
(Ta=25°C)
Characteristic curves
10
5
Re (yfs) (S)
1
0.5
0.3
0.08 0.5 1
1000
500
100
50
Capacitance (pF)
10
01020304050
10
8
6
(A)
DR
I
4
2
0
0 1.0 1.5
N-ch P-ch N-ch
C
T
ID (A)
N-ch P-ch P-ch
VDS (V)
N-ch P-ch
10V
5V
0.5
VSD (V)
(VDS=10V)
=–40°C
125°C
25°C
Capacitance-VDS Characteristics (Typical)
VGS=0V
f=1MHz
=0V
GS
V
Re(yfs)-ID Characteristics (Typical) Safe Operating Area (SOA)
=–40°C
C
T
ID (A)
VDS (V)
25°C
125°C
(VDS=–10V)
--- 5 ---8
VGS=0V
f=1MHz
Ciss
Coss
Crss
---10
ID (pulse) max
--- 5
LIMITED
DS (ON)
R
(A)
--- 1
D
I
---0.5
---0.1
---0.5
---1 ---5 ---10 ---50 ---100
VDS (V)
(TC=25°C)
1ms
10ms (1shot)
510
Ciss
Coss
Crss
5
1
Re (yfs) (S)
0.5
0.3
---0.1
700
500
100
50
Capacitance (pF)
10
0 ---10 ---20 ---30 ---40 ---50
---0.5 ---1
IDR-VSD Characteristics (Typical) PT-Ta Characteristics
--- 8
--- 6
(A)
--- 4
DR
I
–10V
--- 2
--- 0
–5V
=0V
GS
V
0 - --3 ---5
--- 1
--- 2 ---4
VSD (V)
40
35
30
25
20
(W)
T
P
15
10
Without Heatsink
5
0
0 50 100 150
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
Ta (°C)
100µs
41