Sanken Electric Co SLA5003 Datasheet
01020304050
5
50
100
1000
VDS (V)
Capacitance (pF)
500
10
VGS=0V
f=1MHz
Ciss
Coss
Crss
25
30
35
40
20
15
10
5
0
0 50 100 150
Ta (°C)
PT (W)
With Silicone Grease
Natural Cooling
All Circuits Operating
With Infinite Heatsink
Without Heatsink
N-channel
SLA5003
Absolute maximum ratings
Symbol Ratings Unit
VDSS 200 V
VGSS ±20 V
ID ±5A
ID(pulse) ±10 (PW≤1ms) A
EAS*60mJ
IF5(PW≤0.5ms, Du≤25%) A
IFSM 10(PW≤10ms, Single pulse) A
VR 200 V
5
(Ta=25°C, with all circuits operating, without heatsink)
PT
35
(Tc=25°C,with all circuits operating, with infinite heatsink)
θ
j-a 25
θ
j-c 3.57
VISO 1000 (Between fin and lead pin, AC) Vrms
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=10mH, ID=3.5A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
(Junction-Air, Ta=25°C, with all circuits operating)
(Junction-Case, Tc=25°C, with all circuits operating)
2
463
9
1110
With built-in flywheel diode
(Ta=25°C)
°C/W
°C/W
Electrical characteristics
Symbol Unit Conditions
V(BR)DSS 200 V ID=250µA, VGS=0V
IGSS ±500 nA VGS=±20V
IDSS 250
VTH 2.0 4.0 V VDS=10V, ID=250µA
Re(yfs) 1.3 2.5 S VDS=10V, ID=5A
RDS(ON) 0.67 0.9 Ω VGS=10V, ID=5A
Ciss 260 pF VDS=25V, f=1.0MHz,
W
W
Coss 100 pF VGS=0V
ton 50 ns
toff 60 ns
VSD 1.1 1.5 V ISD=5A, VGS=0V
trr 700 ns ISD=±100mA
●Diode for flyback voltage absorption (1 circuit)
Symbol Unit Conditions
VR 200 V IR=10µA
VF
IR 10
1
5
8
12
trr 100 ns IF=±100mA
Specification
min typ max
Specification
min typ max
1.0 1.2 V IF=1A
1.5 2.0 V IF=5A
External dimensions
µ
AVDS=200V, VGS=0V
ID=5A, VDD100V,VGS=10V,
see Fig. 3 on page 16.
µ
AVR=200V
A
• • •
SLA
(Ta=25°C)
7
Characteristic curves
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
8
10V
6
(A)
4
D
I
2
0
05 20
10 15
V
DS
(V)
7V
6V
GS
=5V
V
8
6
(A)
4
D
I
TC=–40°C
25°C
2
125°C
0
02468
VGS (V)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
5
1
Re (yfs) (S)
0.5
TC=–40°C
125°C
25°C
(VDS=10V)
2.5
2.0
1.5
(Ω)
DS (ON)
1.0
R
0.5
(VDS=10V)
ID=5A
V
GS
=10V
1.5
1.0
(Ω)
DS (ON)
0.5
R
10
00123
(VGS=10V)
45678
ID (A)
0.2
0.1
0.05 0.5 1
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics
8
6
36
4
IDR (A)
2
0
0 1.0 1.5
0.5
ID (A)
10V
5V
VSD (V)
V
GS=0V
510
–4000 50 100
20
ID (pulse) max
10
5
DS (ON)
R
LIMITED
1
(A)
D
I
0.5
0.1
0.05
0.03
3
5 10 200
TC (°C)
VDS (V)
10ms (1shot)
50 100
150
(TC=25°C)
100µs
1ms
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