Sanken Electric Co SLA4391 Datasheet

–8
–6
–4
–2
0
0–1–2–3
T
a
=125°C
75°C
25°C
–30°C
(V
CE
=–4V)
I
C
(A)
VBE (V)
PNP + NPN Darlington
Absolute maximum ratings
Symbol Unit
NPN PNP
H-bridge
Specification
a=25°C)
(T
External dimensions
VCBO 100 –100 V VCEO 100 –100 V VEBO 6–6V
IC5–5A
ICP 8 (PW1ms, Du≤50%) –8 (PW≤1ms, Du≤50%) A
IB 0.5 –0.5 A IF 5 (PW0.5ms, Du25%) A
IFSM 8 (PW10ms, single) A
VR 120 V PT W
5 (Ta=25°C)
25 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ
j-c 5 °C/W
Equivalent circuit diagram
3210
1
5
11
469
7
12
8
R1: 2.5ktyp R2: 200typ R3: 3ktyp R4: 100typ
A
• • •
SLA
Characteristic curves
8
7
6
5
4
(A)
C
I
3
2
1
0
01234 5
20000
10000
5000
1000
FE
h
500
100
50 30
0.1 0.5 1 5 8
0.03
20000
10000
5000
32
FE
h
=125°C
a
1000
T
500
100
50 30
0.1 0.5 1 5 8
0.03
NPN PNP NPN
=2mA
B
I
VCE (V)
0.6mA
0.5mA
0.4mA
1mA
0.8mA
0.7mA
–8
–7
–6
–5
(A)
–4
C
I
–3
–2
–1
0
0–1–2–3–4–5
IB=–4mA
VCE (V)
–2mA
–1.2mA
–0.8mA
–0.6mA
–0.4mA
8
6
(A)
4
C
I
2
0
0123
75
=125°C
a
T
hFE-IC Characteristics (Typical)
IC-VCE Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
NPN PNP PNP
IC (A)
(VCE=4V)
typ
20000
10000
5000
1000
FE
h
500
100
50 30
–0.03 –0.1
IC (A)
0.5–1
(VCE=–4V)
typ
–5–
8
hFE-IC Temperature Characteristics (Typical)
NPN PNP
–30°C
IC (A)
(VCE=4V)
75°C
25°C
20000
10000
5000
1000
FE
h
500
100
50 30
–0.03 –0.1
=125°C
a
T
–30°C
(VCE=–4V)
75°C 25°C
–0.5 –1 –5 –8
I
C
(A)
°C
25°C
VBE (V)
(VCE=4V)
–30°C
SLA4391
Electrical characteristics
NPN PNP
Symbol Specification
min typ max min typ max
ICBO 10
Unit Conditions
µ
AVCB=100V –10
IEBO 10 mA VEB=6V –10 mA VEB=–6V
VCEO 100 V IC=10mA –100 V IC=–10mA
hFE 1000 VCE=4V, IC=3A 1000 VCE=–4V, IC=–3A
VCE(sat) 1.5 V IC=3A, IB=6mA –1.5 V IC=–3A, IB=–6mA
Diode for flyback voltage absorption
Symbol Unit Conditions
Specification
min typ max
(Ta=25°C)
VR 120 V IR=10µA VF 1.2 V IF=1A
IR 10
µ
AVR=100V
Specification
Unit Conditions
µ
AVCB=–100V
(Ta=25°C)
Characteristic curves
VCE(sat)-IB Characteristics (Typical)
VCE(sat)-IC Temperature Characteristics (Typical) PT-Ta Characteristics
(IC / IB=1000)
25°C
1ms
10ms
3
2
VCE (sat) (V)
1
0
0.2 0.5
3
2
(sat) (V)
CE
V
1
0
0.3 0.5
10
5
1
0.5
IC (A)
NPN PNP
IC=1A
1 5 10 50
IB (mA)
NPN PNP
158
IC (A)
NPN PNP
IC=5A
IC=3A
75°C
=125°C
a
T
–30°C
Safe Operating Area (SOA)
100µs
–3
–2
(sat) (V)
CE
V
IC=–1A
–1
0 –0.2 –0.5
–1 –5 –10 –50 –100 –500
–3
–2
(sat) (V)
(A)
C
I
CE
V
–10
–0.5
–1
0
–0.3 –0.5
–5
–1
75°C
125°C
25°C
T
=–30°C
a
IC=–5A
IC=–3A
IB (mA)
(IC / IB=1000)
–1 –5 –8
IC (A)
100µs
1ms
10ms
θ
j-a-PW Characteristics
20
10
5
(°C / W)
j–a
θ
1
0.5 1 5 10 50 100 500 1000
25
20
15
(W)
T
P
10
Without Heatsink
5
0 –40 0 50 100 150
PW (mS)
100
50
×
Ta (°C)
With Silicone Grease Natural Cooling Heatsink: Aluminum in mm
With Infinite Heatsink
×
100
×
2
50
×
2
0.1
Single Pulse
0.05
Without Heatsink T
0.03
a=25°C
–0.1
Single Pulse
–0.05
Without Heatsink
a
=25°C
T
5
VCE (V)
10050103
–0.03
–5
VCE (V)
–100–50–10–3
33
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