3-circuit High-side Power Switch Array SLA2501M
32
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● Low saturation PNP transistor use (V
CE (sat)
● Allows direct driving using LS-TTL and C-MOS logic levels
● Built-in Zener diode in transistor eliminates the need of (or simplifies) external
surge absorption circuit
● Built-in independent overcurrent and thermal protection circuit in each circuit
● Built-in protection against reverse connection of power supply
● Tj = 150ºC guaranteed
Absolute Maximum Ratings
Parameter Symbol Unit ConditionsRatings
Power supply voltage
Drive terminal applied voltage
Input terminal voltage
DIAG output applied voltage
DIAG output source current I
Voltage across power supply
and output terminal
Voltage across power supply
and drive terminal
Output current I
Output reverse current I
Electrostatic resistance E
Power Dissipation
Junction temperature
Operating temperature
Storage temperature
V
V
V
T
Tstg
V
V
V
DIAG
DIAG
P
B
D
IN
B–O
B–D
O
O
S/A
D
Tj
OP
Electrical Characteristics
Parameter Symbol
V
Operating power supply voltage
Quiescent circuit current (per circuit)
Circuit current (per circuit)
Threshold input voltage
Input voltage
Input current
Hi output
Lo output
Hi output
Lo output
Saturation voltage of output
transistor
Output terminal sink current
Surge clamp voltage
Saturation voltage of DIAG output
Leak current of DIAG output V
Open load detection resistor
Overcurrent protection starting
current
Thermal protection starting
temperature
Output transfer time
DIAG output transfer time
Minimum load inductance mHLo 1.0
Maximum ON duty %D
Note:
* The Zener diode has an energy capability of 200 mJ (single pulse).
* A start failure may occur if a short OFF signal of 10 ms or below is input in the V
Bopr
Iq
B
IN
V
IN
V
IN
I
IN
I
IN
CE (sat)
CE (sat)
O (off)
V
B–O
V
DL
DGH
Ropen
S
T
TSD
T
ON
T
OFF
T
PLH
T
PHL
(ON)
th
–13 to +40
–0.3 to +7.0
–0.3 to +7.0
–40 to +150
–40 to +115
–50 to +150
(V
Bopr
min typ max
6.0 16
0.8
3.7
100
29
28
5.5
1.6
0
0.2V)
(Ta=25ºC)
V
B
V
–34
B
4.8
=14V, Tj= –40 to +150ºC unless otherwise specified)
Ratings
1.6
0.8
19.3
3.0 VV
1.5
–1.0 mA
1.0
2.5
34
34
100
100
V–0.3 to V
V
V
mA –3
V
V–0.4
A1.5
A–1.8
V±250
W
ºC
ºC
ºC
Unit Conditions
V
mA
mAI
V
V
µA
VV
VV
mAI
V
V
kΩ
AI
ºC
µS
30
µS
µS
30
µS
60
= 200pF, R = 0 Ω
C
Stand-alone without heatsink,
all circuits operating
Lo output
Tj
= 2 5 º C
V
= 5 V
IN
V
= 0 V
IN
1.2A, V
1.5A, V
Bopr
Bopr
CEO
= 6 to 16V0.2
= 6 to 16V
= 14V 5
I
O
I
O
= 25ºC, V
Tj
Tj
= 25ºC, IC = 10mA39
IC = 5mA40
I
DGH
V
V
I
O
I
O
I
O
I
O
CC
= V
O
Bopr
= 1 A
= 1 A
= 1 A
= 1 A
= –2mA, V
= 7 V–100 µAI
IN terminal.
Bopr
= 6 to 16V0.4 V
Bopr
–1.5V
6V
External Dimensions
±0.2
31
±0.2
±0.15
3.2
±0.2
12.9
±0.5
6.4
24.4
a
b
+0.2
–0.1
1.15
±0.1
14 • P2.03 = (28.42)
±0.2
31.3
123 15
(unit: mm)
±0.15
Ellipse 3.2 • 3.8
+0.2
–0.1
0.65
a: Type No.
b: Lot No.
Equivalent Circuit Diagram
a
V
IN
c
f
MIC
a: Pre-regulator
b: Overvoltage protection circuit
c: Control circuit
d: Driver circuit
GND
b
d
g
e
e: Overcurrent protection circuit
f: Diagnostic circuit
g: Thermal protection circuit
Standard Circuit Diagram
V
B
13914
V
D1D2D
B
5
IN
1
7
IN
2
SLA2501M
12
IN
3
GND1OUT1OUT2OUT
GND
2
6 11 2 10 15
3
4
FLT
1
8
FLT
2
13
FLT
3
3
Diagnostic Function
Normal NormalOpen load OverheatShorted load
V
IN
V
O
V
DIAG
±0.2
4.8
±0.1
1.7
±0.2
16
±0.2
9.9
+0.2
–0.1
0.55
FLT
V
CC
2.45
±0.2
V
B
OUT
D
Quiescent Circuit Current (single circuit)
■
5
4
3
Iq (mA)
2
1
T –40ºC
T 25ºC
a
=
T 125ºC
a
V 0V
IN
=
a
=
Circuit Current (single circuit)
■
(mA)
B
I
40
=
T –40
ºC
a
30
20
10
=
T 25
a
=
T 125
a
ºC
ºC
=
=
V 5V
IN
Saturation Voltage of Output Transistor
■
(V)
(sat)
CE
V
1.0
0.5
T 150
a
=
T 125
a
=
T –40
a
=
ºC
=
5V
V
IN
=
6 to 16V
V
B
ºC
ºC
=
T 25
a
ºC
0
0102030
40
VB (V)
Overcurrent Protection Characteristics (Ta= –40ºC)
■
20
=
14V
V
B
10
(V)
O
V
0
012
34
IO (A)
Threshold Input Voltage
■
20
V
=
T 125
a
=
B
16V
ºC
=
I1A
OUT
25ºC–40
ºC
0
0102030
V
(V)
B
Overcurrent Protection Characteristics (Ta=25ºC)
■
20
=
V
B
10
(V)
O
V
0
012
345
40
14V
IO (A)
Input Current (Output ON)
■
1.0
=
V
14V
B
0V=V
IN
0
0123
3.5
IO (A)
Overcurrent Protection Characteristics (Ta=115ºC)
■
20
=
14V
V
B
10
(V)
O
V
0
012
34
IO (A)
Input Current (Output OFF)
■
20
=
V
B
14V
=
0V
V
IN
10
(V)
O
V
0
012
VIN (V)
Saturation Voltage of DIAG Output
■
0.3
0.2
(V)
DL
V
0.1
0
0–50
50 100 125
Ta (ºC)
34
=
14V
V
B
5V=V
IN
=
3 (mA)
I
FLT
0.5
(mA)
IH
I
0
Output Reverse Current
■
1.4
1.2
1.0
0.8
(V)
F
0.6
V
0.4
0.2
0
0
0--50
T=125ºC
a
1234
50 100 125
Ta
(ºC)
--
T=40ºC
a
T=25ºC
a
IF (A)
10
(µA)
IL
I
0
Thermal Protection
■
10
20
10
(V)
O
V
5
FLT
V (V)
0
060
0–50
50 100 125
Ta
(ºC)
=
VB16V
100
V
I
V
160
=
10mA
O
O
FLT
180
Ta (ºC)
33