Sanken Electric Co SI-5152S Datasheet
High-side Power Switch with Diagnostic Function SI-5152S
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● Low saturation PNP transistor use
● Allows direct driving using LS-TTL and C-MOS logic levels
● Built-in overcurrent and thermal protection circuits
● Built-in protection against reverse connection of power supply
● Tj = 150ºC guaranteed
● TO-220 equivalent full-mold package not require insulation mica
Absolute Maximum Ratings
Parameter Symbol Unit ConditionsRatings
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Output current I
Power Dissipation
Junction temperature
Operating temperature
Storage temperature
V
V
P
P
T
Tstg
V
V
DIAG
Tj
B
IN
CE
O
D1
D2
OP
Electrical Characteristics
Parameter Symbol
Operating power supply voltage
Quiescent circuit current
Saturation voltage of output
transistor
Output leak current
Input voltage
Input current
Overcurrent protection starting
current
Thermal protection starting
temperature
Output ON
Output OFF
Output ON
Output OFF
Open load detection resistor
Output transfer time
DIAG output leak current
Saturation voltage of DIAG output
DIAG output transfer time
Minimum load inductance
Note:
* The rule of protection against reverse connection of power supply is V
(all terminals except, V
V
Bopr
Iq
V
CE (sat)
, leak
O
V
IH
V
IL
I
IH
I
IL
S
T
TSD
Ropen
T
ON
T
OFF
I
DIAG
V
DL
T
PLH
T
PHL
and GND, are open).
B
40
–0.3 to V
B
6
40
22
1.8
–40 to +150
–40 to +100
–40 to +150
(Ta=25ºC unless otherwise specified)
Ratings
min typ max
6.0 30
5 12
0.5 V
1.0 V
2mAI
2.0
–0.3
–0.1
1.9 AI
150 ºC
8 30
15 30
100
V
B
0.8 V
1mA
30
0.3
30
30
V
V
V
V
A1.8
With infinite heatsink (Tc=25ºC)
W
Stand-alone without heatsink
W
ºC
ºC
ºC
Unit Conditions
V
V
I
O
I
O
V
V
V
V
V
V
V
V
V
V
V
V
CC
V
V
Bopr
1.0A, V
1.8A, V
CEO
Bopr
Bopr
= 5 V
IN
= 0 V
IN
Bopr
Bopr
Bopr
Bopr
Bopr
CC
= 6V, V
Bopr
Bopr
= 6V, V
= 14V, V
= 16V, V
= 6 to 16V
= 6 to 16V
=
14V, VO =
6V
= 6 to 16V
= 14V, IO = 1 A
= 14V, IO = 1 A
= 14V, IO = 1 A
= 14V, IO = 1 A
mA
V
mA
kΩ
µS
µS
µA
V
µS
µS
mHL1
= –13V, one minute
B
IN
= 6 to 16V
Bopr
= 6 to 16V
Bopr
= 0 V
IN
= 6 to 16V
Bopr
= 6 to 16V, I
Bopr
(Ta = 25ºC)
= 0 V
V
Bopr
–1.5V
DO
= 2mA
External Dimensions
±0.2
10
±0.2
4.0
a
b
±0.15
0.94
+0.2
–0.1
0.85
±0.15
P1.7 • 4
12345
(unit: mm)
±0.2
3.2
±0.2
7.9
±0.3
16.9
1. GND
2. V
IN
3. V
o
4. DIAG
5. V
B
4.2
2.8
2.6
±0.6
4
(Forming No. 1111)
Standard Circuit Diagram
5
V
O
3
DIAG
4
5.1kΩ
1
LS-TTL
or
CMOS
V
IN
SI-5152S
2
Truth table
VINV
O
HH
LL
Diagnostic Function
Normal NormalOpen load OverheatShorted load
V
IN
V
O
DIAG
V
Mode
Normal
Open load
Shorted load
Overheat
● DIAG output will be undetermined when a voltage
exceeding 25V is applied to V
V
IN
O
L
LHL
H
LHHHH
LHLLL
LHLLL
terminal.
B
±0.2
±0.2
±0.1
DIAG
V
CC
H
H
L
L
20max
–0.3
+0.2
2.9
±0.5
3.6
+0.2
–0.1
0.45
a: Type No.
b: Lot No.
P
Z
Load
V
GND
B
22
Quiescent Circuit Current
■
10
(mA)
5
q
I
95ºC
25ºC
–40ºC
Circuit Current
■
40
30
20
(mA)
B
I
10
Saturation Voltage of Output Transistor
■
1.0
T
= –
40
ºC
a
V
=
B
T
=
25
ºC
a
T
=
95
ºC
a
0.5
VCE (sat) (V)
6 to 16V
95
ºC
–40
ºC
25
ºC
0
Overcurrent Protection Characteristics (Ta= –40ºC)
■
10 20 30 40
0
V
(V) VB (V)
B
16
14
12
V =
B
14V
10
(V)
8
O
V
6
4
2
0
0
Threshold input voltage
■
20
15
123
I
(A)
O
T
=
a
95ºC
25ºC
–40
V
= 16V
B
I
= 1 A
O
ºC
0
0
10 20 30 40
Overcurrent Protection Characteristics (Ta=25ºC)
■
16
14
12
10
(V)
8
O
V
6
4
2
0
0
Input Current (Output ON)
■
1.0
123
I
O
V =
(A)
B
14V
V
V
50
=
5V
IN
=
14V
B
0
0
Overcurrent Protection Characteristics (Ta=100ºC)
■
16
14
12
10
(V)
8
O
V
6
4
2
0
0
Input Current (Output OFF)
■
2
123
I
(A)
O
V =
B
14V
123
I
(A)
O
=
0V
V
IN
=
14V
V
B
(V)
10
O
V
5
0
0
Saturation Voltage of DIAG Output
■
0.2
0.1
12
V
(V)
IN
VDL (V)
0
–40 0 50 100
Ta (ºC)
0.5
(mA)
IH
I
0
2.2
–40
050
100
Ta (ºC)
=
14V
V
B
1
(µA)
IL
I
0
–40
0 50 100
Ta (ºC)
23
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