Sanken Electric Co SI-5151S Datasheet

High-side Power Switch with Diagnostic Function SI-5151S
Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals
Low saturation PNP transistor use
Allows direct driving using LS-TTL and C-MOS logic levels
Built-in overcurrent and thermal protection circuits
Built-in protection against reverse connection of power supply
TO-220 equivalent full-mold package not require insulation mica
Absolute Maximum Ratings
Parameter Symbol Unit ConditionsRatings Power supply voltage Input terminal voltage DIAG terminal voltage Collector-emitter voltage Output current I
Power Dissipation
Junction temperature Operating temperature Storage temperature
V
V
P
P
T
Tstg
V V
DIAG
Tj
B
IN
CE
O
D1
D2
OP
Electrical Characteristics
Parameter Symbol
Operating power supply voltage Quiescent circuit current
Saturation voltage of output transistor
Output leak current
Input voltage
Input current
Overcurrent protection starting current
Thermal protection starting temperature
Output ON Output OFF Output ON Output OFF
Open load detection resistor
V
O
Ropen
Output transfer time
DIAG output voltage
DIAG output transfer time
Minimum load inductance
Note: * The rule of protection against reverse connection of power supply is V (all terminals except, V
and GND, are open).
B
min typ max
V
Bopr
Iq
CE (sat)
, leak
V
IH
–0.3
V
IL
I
IH
–0.1
I
IL
S
125 ºC
T
TSD
T
ON
T
OFF
V
DH
V
DL
T
PLH
T
PHL
40
–0.3 to V
B
6 40
18
1.5
–40 to +125 –40 to +100 –40 to +125
Ratings
6.0 30 5 12
2.0
1.9 AI
145
8 30 15 30
4.5
1
(Ta=25ºC unless otherwise specified)
0.5 V
1.0 V 2mAI
V
B
0.8 V 1mA
30
6
0.3
30 30
V V V V A1.8
With infinite heatsink (Tc
W
Stand-alone without heatsink
W
(Tc
= 25ºC) ºC ºC ºC
Unit Conditions
V
V I I V V V V V
V
V V V V V V V
O
O
Bopr
CEO
Bopr
Bopr
IN
IN
Bopr
Bopr
Bopr
Bopr
CC
CC
Bopr
Bopr
1.0A, V
1.8A, V
= 5 V
= 0 V
= 6 V = 6V, I
= 14V, V
= 16V
= 6 to 16V = 6 to 16V
=
14V, V
= 6 to 16V = 14V, IO = 1 A = 14V, IO = 1 A
= 14V, IO = 1 A = 14V, IO = 1 A
mA
V
mA
k
µS µS
V V
µS µS
mHL
= –13V, one minute
B
Bopr
Bopr
DD
= 0 V
IN
= 6 to 16V = 6 to 16V
=
V
O
= 2mA
(Ta=25ºC)
–1.5V
Bopr
= 25ºC)
±0.2
7.9
1. GND
2. V
3. V
4. DIAG
5. V
±0.3
16.9
0.45
IN O
B
(unit: mm)
R-end
+0.2
–0.1
External Dimensions
±0.2
3.2
±0.2
10
±0.2
4
a
b
±0.15
0.94
+0.2
–0.1
0.85
±0.1
P1.7 • 4 = 6.8
(Forming No. 1123)
Standard Circuit Diagram
5
V
O
3
DIAG
4
1
LS-TTL or CMOS
V
IN
SI-5151S
2
Truth table
VINV
O
HH LL
Diagnostic Function
Normal NormalOpen load OverheatShorted load
V
IN
V
O
DIAG
V
Mode
Normal Open load Shorted load Overheat
DIAG output will be undetermined when a voltage exceeding 25V is applied to V
V
IN
O
L
LHL H LHHHH
LHLLL LHLLL
B terminal.
±0.2
4.2
±0.6
4
a: Type No. b: Lot No.
V
CC
5.1k
DIAG
H H L L
2.8
2.6
±0.2
±0.1
–0.3
+0.2
2.9
P
Z
Load
V
GND
20max
±0.5
3.6
B
20
Quiescent Circuit Current
10
5
Iq (mA)
95ºC
25ºC
--40ºC
Circuit Current
40
30
20
(mA)
B
I
10
=
T --40
a
=
T 25
a
=
T 95
a
Saturation Voltage of Output Transistor
1.0
ºC
V =
B
ºC
(V)
ºC
(sat)
CE
V
0.5
6 to 16V
95
ºC
--40
ºC
25
ºC
0
0
10 20 30 40
V
(V) VB (V)
B
Overcurrent Protection Characteristics (Ta= –40ºC)
16 14
12
V =
B
14V
10
(V)
8
O
V
6 4 2
0
0
Threshold input voltage
20
15
123
I
(A)
O
Ta =
95ºC
=
16V
V
B
=
1A
I
O
25ºC–40
0
0
10 20 30 40
Overcurrent Protection Characteristics (Ta=25ºC)
16
14
12 10
(V)
8
O
V
6 4 2
0
0
Input Current (Output ON)
1.0
ºC
123
I
O
V =
(A)
B
14V
V V
50
=
5V
IN
=
14V
B
0
0
Overcurrent Protection Characteristics (Ta=100ºC)
16 14 12
10
(V)
8
O
V
6
4 2 0
0
Input Current (Output OFF)
2
123
I
(A)
O
V =
B
14V
123
I
(A)
O
=
V
IN
=
V
B
0V
14V
10
(V)
O
V
5
0
0
Saturation Voltage of DIAG Output
0.2
(V)
0.1
(sat)
DG
V
0 –40 0 50 100
12
V
(V)
IN
Ta (ºC)
1
0.5
(mA)
IH
I
0
2.2
–40
050
100
Ta (ºC)
Thermal Protection Characteristics
=
14V
V
B
16 14
6
12
V
5
10
8
(V)
O
V
6
4 2
0
0 50 100
4
3
DIAG (V)
2
1
I
O
B
=
=
14V
10mA
V
o
DIAG
150
(µA)
IL
I
0 –40
0 50 100
Ta (ºC)
Ta (ºC)
21
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