High-side Power Switch with Diagnostic Function SI-5151S
Features
● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
● Low saturation PNP transistor use
● Allows direct driving using LS-TTL and C-MOS logic levels
● Built-in overcurrent and thermal protection circuits
● Built-in protection against reverse connection of power supply
● TO-220 equivalent full-mold package not require insulation mica
Absolute Maximum Ratings
Parameter Symbol Unit ConditionsRatings
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Output current I
Power Dissipation
Junction temperature
Operating temperature
Storage temperature
V
V
P
P
T
Tstg
V
V
DIAG
Tj
B
IN
CE
O
D1
D2
OP
Electrical Characteristics
Parameter Symbol
Operating power supply voltage
Quiescent circuit current
Saturation voltage of output
transistor
Output leak current
Input voltage
Input current
Overcurrent protection starting
current
Thermal protection starting
temperature
Output ON
Output OFF
Output ON
Output OFF
Open load detection resistor
V
O
Ropen
Output transfer time
DIAG output voltage
DIAG output transfer time
Minimum load inductance
Note:
* The rule of protection against reverse connection of power supply is V
(all terminals except, V
and GND, are open).
B
min typ max
V
Bopr
Iq
CE (sat)
, leak
V
IH
–0.3
V
IL
I
IH
–0.1
I
IL
S
125 ºC
T
TSD
T
ON
T
OFF
V
DH
V
DL
T
PLH
T
PHL
40
–0.3 to V
B
6
40
18
1.5
–40 to +125
–40 to +100
–40 to +125
Ratings
6.0 30
5 12
2.0
1.9 AI
145
8 30
15 30
4.5
1
(Ta=25ºC unless otherwise specified)
0.5 V
1.0 V
2mAI
V
B
0.8 V
1mA
30
6
0.3
30
30
V
V
V
V
A1.8
With infinite heatsink (Tc
W
Stand-alone without heatsink
W
(Tc
= 25ºC)
ºC
ºC
ºC
Unit Conditions
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
O
O
Bopr
CEO
Bopr
Bopr
IN
IN
Bopr
Bopr
Bopr
Bopr
CC
CC
Bopr
Bopr
1.0A, V
1.8A, V
= 5 V
= 0 V
= 6 V
= 6V, I
= 14V, V
= 16V
= 6 to 16V
= 6 to 16V
=
14V, V
= 6 to 16V
= 14V, IO = 1 A
= 14V, IO = 1 A
= 14V, IO = 1 A
= 14V, IO = 1 A
mA
V
mA
kΩ
µS
µS
V
V
µS
µS
mHL
= –13V, one minute
B
Bopr
Bopr
DD
= 0 V
IN
= 6 to 16V
= 6 to 16V
=
V
O
= 2mA
(Ta=25ºC)
–1.5V
Bopr
= 25ºC)
±0.2
7.9
1. GND
2. V
3. V
4. DIAG
5. V
±0.3
16.9
0.45
IN
O
B
(unit: mm)
R-end
+0.2
–0.1
External Dimensions
±0.2
3.2
±0.2
10
±0.2
4
a
b
±0.15
0.94
+0.2
–0.1
0.85
±0.1
P1.7 • 4 = 6.8
(Forming No. 1123)
Standard Circuit Diagram
5
V
O
3
DIAG
4
1
LS-TTL
or
CMOS
V
IN
SI-5151S
2
Truth table
VINV
O
HH
LL
Diagnostic Function
Normal NormalOpen load OverheatShorted load
V
IN
V
O
DIAG
V
Mode
Normal
Open load
Shorted load
Overheat
● DIAG output will be undetermined when a voltage
exceeding 25V is applied to V
V
IN
O
L
LHL
H
LHHHH
LHLLL
LHLLL
B terminal.
±0.2
4.2
±0.6
4
a: Type No.
b: Lot No.
V
CC
5.1kΩ
DIAG
H
H
L
L
2.8
2.6
±0.2
±0.1
–0.3
+0.2
2.9
P
Z
Load
V
GND
20max
±0.5
3.6
B
20
Quiescent Circuit Current
■
10
5
Iq (mA)
95ºC
25ºC
--40ºC
Circuit Current
■
40
30
20
(mA)
B
I
10
=
T --40
a
=
T 25
a
=
T 95
a
Saturation Voltage of Output Transistor
■
1.0
ºC
V =
B
ºC
(V)
ºC
(sat)
CE
V
0.5
6 to 16V
95
ºC
--40
ºC
25
ºC
0
0
10 20 30 40
V
(V) VB (V)
B
Overcurrent Protection Characteristics (Ta= –40ºC)
■
16
14
12
V =
B
14V
10
(V)
8
O
V
6
4
2
0
0
Threshold input voltage
■
20
15
123
I
(A)
O
Ta =
95ºC
=
16V
V
B
=
1A
I
O
25ºC–40
0
0
10 20 30 40
Overcurrent Protection Characteristics (Ta=25ºC)
■
16
14
12
10
(V)
8
O
V
6
4
2
0
0
Input Current (Output ON)
■
1.0
ºC
123
I
O
V =
(A)
B
14V
V
V
50
=
5V
IN
=
14V
B
0
0
Overcurrent Protection Characteristics (Ta=100ºC)
■
16
14
12
10
(V)
8
O
V
6
4
2
0
0
Input Current (Output OFF)
■
2
123
I
(A)
O
V =
B
14V
123
I
(A)
O
=
V
IN
=
V
B
0V
14V
10
(V)
O
V
5
0
0
Saturation Voltage of DIAG Output
■
0.2
(V)
0.1
(sat)
DG
V
0
–40 0 50 100
12
V
(V)
IN
Ta (ºC)
1
0.5
(mA)
IH
I
0
2.2
–40
050
100
Ta (ºC)
Thermal Protection Characteristics
■
=
14V
V
B
16
14
6
12
V
5
10
8
(V)
O
V
6
4
2
0
0 50 100
4
3
DIAG (V)
2
1
I
O
B
=
=
14V
10mA
V
o
DIAG
150
(µA)
IL
I
0
–40
0 50 100
Ta (ºC)
Ta (ºC)
21