Sanken Electric Co SDH04 Datasheet

Surface-mount Dual Circuit High-side Power Switch Array SDH04

Features

● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals

● Low saturation PNP transistor use

● Allows direct driving using LS-TTL and C-MOS logic levels

● Built-in overcurrent and thermal protection circuits

● Built-in protection against reverse connection of power supply

● Tj = 150ºC guaranteed

● Surface-mount full-mold package

Absolute Maximum Ratings

Parameter Symbol Unit ConditionsRatings
Power supply voltage
Drive terminal applied voltage
Input terminal voltage
DIAG output applied voltage
DIAG output source current I
Voltage across power supply

and drive terminal
Output current I
Power dissipation
Junction temperature
Operating temperature
Storage temperature

V

V

T

Tstg

V
V
V

DIAG

DIAG

P

B

D

IN

B–D

O

D

Tj

OP

Electrical Characteristics

Parameter Symbol

V

Operating power supply voltage
Quiescent circuit current
Threshold input voltage

Input current

Hi output
Lo output

Saturation voltage of output
transistor

Output terminal sink current VO = 0V, V
Saturation voltage of DIAG output

Leak current of DIAG output V
Open load detection resistor
Overcurrent protection starting

current
Thermal protection starting

temperature

Output transfer time

DIAG output transfer time

Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute
(all terminals except, V

Bopr

Iq

th

IN

I

IN

I

IN

CE (sat)

O (off)

DL

DGH

Ropen

S

T

TSD

T

ON

T

OFF

T

PLH

T

PHL

and GND, are open).

B

–13 to +40

B

–0.3 to +7.0
–0.3 to +7.0

V

–0.4

B

2.6
–40 to +150
–40 to +100
–40 to +150

(V

=14V, Ta=25ºC unless otherwise specified)

Bopr

Ratings

min typ max

6.0

16

5 12

0.8

3.0 VV

1.0

0

1

100

30

1.6

150

8 30
15

30
30

10
15

30

V
V–0.3 to V
V
V

mA 3

V

A1.5

Without heatsink, all circuits operating

W
ºC
ºC
ºC

Unit Conditions

V

L

o output

mA

V

mA

= 5 V

IN

V

= 0 V

µA

IN

VV

I

1.0A, V

O

VV

I

= 3mA0.3

DIAG

= 5 V100 µAI

DIAG

kΩ

AI

V

= V

O

Bopr

ºC

V

6V

Bopr

µS

I

= 1 A

O

µS

I

= 1 A

O

µS

I

= 1 A

O

I

= 1 A

µS

O

Bopr

IN

–1.9V

(Ta=25ºC)

= 6 to 16V0.5

= 0 V2.0 mAI

Diagnostic Function

V

B

GND

3.0V

0.8V

V

IN

GND

V

OUT

GND

I

O

SHORT

Is

OVER
VOLTAGE

OPENOPEN

TSD

External Dimensions

±0.15

2.54

+0.15
–0.05

0.89

+0.15
–0.05

0.75
16

±0.2

±0.5

6.3

8.0

6.8max

Pin 1 8

±0.2

3.6

4.0max

±0.2

1.4

0.25

±0.3

1.0

±0.3

±0.2

9.8

3.0

0 to 0.15

0.3

(unit: mm)

±0.25

a

b

20.0max

19.56

SMD-16A

±0.2

a: Type No.
b: Lot No.

Equivalent Circuit Diagram

The MIC is bound by the dotted lines.

2

IN1

3

DIAG1

7

IN2

6

DIAG2

[Abbreviations]

Drive: Drive circuit
CONT: ON/OFF circuit
Pre.Reg: Pre-regulator

*1. The base terminal (D terminal) is connected to the output

transistor base. It is also connected to the control monolithic
IC. Do not, therefore, apply an external voltage in operation.

*2. SDH04 have two or three terminals of the same function (

Out1, Out2

shorted at a pattern near the product.

Pre. Reg.

CONT.

11kΩ typ.

CONT.

11kΩ typ.

DIAG DET.

DIAG DET.

Drive

T.S.D

Drive

4,5,13

2

*

GND

DIAG.DET.: Diagnostic circuit
O.C.P.: Overcurrent protection
T.S.D.: Thermal protection

, GND). The terminals of the same function must be

O.C.P

O.C.P

9,12,16

1,15

14

8,10

11

Standard Circuit Diagram

P

Z

D

1

Out

SDH04

IN

Truth table

VINV

O

HH
LL

Note 1: A pull-down resistor (11 kΩ typ.) is connected to the IN terminal.
V

turns "L" when a high impedance is connected to the IN terminal in

OUT

series.

DIAG

5.1kΩ

V

CC

Load

V

B

Out1
D1

Out2
D2

VB,

GND

9

2

*

2

*

1

*

2

*

1

*

V

B

30

GND

V

DIAG

Normal Shorted load Open load Overvoltage Overheat

ERROR SIGNAL for CPU

Quiescent Circuit Current (dual circuit)

■

20

Ta

= –40ºC

25ºC

125ºC

(mA)

10

Iq

VO shorted

open

V

O

0

0102030

VB (V)

Circuit Current (single circuit)

IN

4640

50

40

30

(mA)

B

I

20

10

0

0102030

Ta

–40ºC

125ºC

V

IN

=

25ºC

= 0V

V

■

= 0V

V

= 5V

IN

4640

VB (V)

Circuit Current (dual circuit)

■

100

Ta

=

80

60

(mA)

B

I

40

20

0

0102030

–40ºC

125ºC

V

IN

25ºC

= 0V

VB (V)

V

= 5V

IN

4640

Saturation Voltage of Output Transistor

■

1.5

VB= 16V

= 6 V

V

B

1.0

(V)

(sat)

CE

V

0.5

0

012

Ta=

125ºC

25ºC

–40ºC

3

IO (A)

Overcurrent Protection Characteristics (Ta=125ºC)

■

20

V

=

B

18V

14V

6V

(V)

O

V

15

10

5

Overcurrent Protection Characteristics (Ta=–40ºC)

■

20

V

=

B

15

(V)

10

O

V

5

0

012

18V

14V

6V

43

IO (A)

Threshold Characteristics of Input Voltage

■

(V)
V

15

10

O

5

Ta

= 125ºC

25ºC

V

= 14V IO = 1A

B

–40ºC

Overcurrent Protection Characteristics (Ta=25ºC)

■

20

V

=

B

15

(V)

10

O

V

5

0

012

18V

14V

6V

43

IO (A)

Input Terminal Source Current

■

1.0

0.8

0.6

(mA)

IN

I

0.4

0.2

Ta

25ºC

–40ºC

V

= 14V

B

= 125ºC

0

012

IO (A)

Input Terminal Sink Current

■

1.0

(µA)

0.5

INL

I

0

–50 0 50 100

Ta (ºC)

= 14V VIN= 0 V

V

B

150

43

0

012

3

VIN (V)

Saturation Voltage of DIAG Output

■

0.3
V

= 14V

B

= 3mA

I

DIAG

0.2

(V)

DL

V

0.1

0
–50 0 50 100

150

Ta (ºC)

0

02468

VIN (V)

Thermal Protection Characteristics

■

15

10

(V)

O

V

5

0

500 100 150

V

= 14V IO = 10mA

B

Ta (ºC)

10

200

31