Sanken Electric Co SDH03 Datasheet
PNP + NPN Darlington
SDH03
Absolute maximum ratings
Symbol Unit
NPN PNP
H-bridge
Specification
External dimensions
(Ta=25°C)
VCBO 100 –60 V
VCEO 100 –60 V
VEBO 6–6V
IC1.5 –1.5 A
ICP 2.5 (PW≤1ms, Du≤100%) –2.5 (PW≤1ms, Du≤10%) A
IB 0.1 –0.1 A
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ
j–a 41.6 °C/W
■Equivalent circuit diagram
26
R3
R4
15
15 16 11 12
13
14 9 10
37
R1R2
48
R3: 4kΩ typ
R
4: 100Ω typ
R
1: 4kΩ typ
2: 200Ω typ
R
E
• • •
SD
Characteristic curves
2.5
2.0
1.5
(A)
C
I
1.0
0.5
0
10000
5000
1000
hFE
500
100
0.03 0.05 0.1 0.5 1 2.5
10000
5000
1000
FE
h
500
NPN PNP NPN
IB=10mA
123456
1.2mA
2mA
4mA
0.6mA
0.4mA
0.3mA
VCE (V)
NPN PNP PNP
I
C (A)
NPN PNP
=125°C
a
T
(VCE=4V)
FE-IC Temperature Characteristics (Typical)
h
(VCE=4V)
75°C
25°C
–30°C
IC-VCE Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
CE
=4V)
(V
25°C
–30°C
IC (A)
–2.5
–2.0
–1.5
–1.0
–0.5
2.5
2.0
1.5
(A)
C
I
1.0
0.5
0
0123
75°C
=125°C
a
T
VBE (V)
VCE (V)
–1.2mA
–1.0mA
–0.8mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–6–5–4–3–2–10
–2mA
=–5mA
B
I
0
hFE-IC Characteristics (Typical)
typ
10000
5000
1000
FE
h
500
100
50
30
–0.03 –0.05 –0.1 –0.5 –1 –2.5
10000
5000
1000
FE
h
500
IC (A)
°C
=125°C
a
75
T
25°C
–30°C
(VCE=–4V)
Typ
(VCE=–4V)
–2.5
–2.0
–1.5
Ta=125°C
(A)
C
I
–1.0
–0.5
75°C
25°C
–30°C
0
0–1–2 –3
V
(VCE=–4V)
BE
(V)
168
100
0.03 0.05 0.1 0.5 1 2.5
IC (A)
100
50
–0.03 –0.1 –0.5 –1 –2.5
–0.05
IC (A)
SDH03
)
3
2
1
0
0
4
3
2
1
50 100 150
P
T
(W)
Ta (°C)
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
0
)
Electrical characteristics
NPN PNP
Symbol Specification
min typ max min typ max
ICBO 10
Unit Conditions
µ
AVCB=100V –10
IEBO 3mA VEB=6V –3 mA VEB=–6V
VCEO 100 V IC=10mA –60 V IC=–10mA
hFE 2000 12000 VCE=4V, IC=1A 2000 12000 VCE=–4V, IC=–1A
VCE(sat) 1.3 V
VBE(sat) 2.2 V –2.2 V
IC=1A, IB=2mA
Specification
Unit Conditions
–1.4 V
µ
AVCB=–60V
IC=–1A, IB=–2mA
(Ta=25°C)
Characteristic curves
3
2
(sat) (V)
CE
V
1
0
0.1 0.5 1 5 10 50 100
NPN PNP
–3
–2
IB (mA
IC=1A
IC=0.5A
IC=2A
(sat) (V)
CE
V
–1
0
–0.1 –0.5 –1 –5 –10 –50
C
I
IB (mA)
=–0.5A
IC=–2A
I
C
=–1A
VCE(sat)-IC Temperature Characteristics (Typical)
VCE(sat)-IB Characteristics (Typical)
NPN PNP
3
2
(sat) (V)
CE
V
1
0
0.2 0.5 1 2.5
25°C
–30°C
(IC / IB=1000)
Ta=125°C
75°C
IC (A)
–3
–2
(sat) (V)
CE
V
–1
125°C
0
–0.2 –0.5 –1 –2.5
75°C
25°C
T
=–30°C
a
IC (A)
C
/ IB=1000)
(I
Safe Operating Area (SOA)
5
1
0.5
(A)
C
I
0.1
Single Pulse
0.05
Without Heatsink
Ta=25°C
0.03
3 5 10 50 100
VCE (V)
10ms
100µs
1ms
NPN PNP
–5
1ms
–1
–0.5
(A)
C
I
Single Pulse
–0.1
Without Heatsink
a
=25°C
T
–0.05
–3 –5 –10 –50 –10
10ms
VCE (V
100µs
θ
j-a-PW Characteristics
50
10
(°C / W)
5
j–a
θ
1
50
10
5
θj–a (°C / W)
1
1 5 10 50 100 500 1000
NPN
51 10 100 500 100050
PW (mS)
PNP
PW (mS)
PT-Ta Characteristics
169
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